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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STI40N65M2

Name: STI40N65M2
Brand: STMicroelectronics
SKU: STI40N65M2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STI40N65M2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: STI40N65M2.pdf

Description:: MOSFET N-CH 650V 32A I2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STI40N65M2 from STMicroelectronics is an N-channel 650 V, 87 mΩ typ. (99 mΩ max.), 32 A MDmesh™ M2 Power MOSFET in TO-220 package, designed for high-efficiency hard-switching and resonant converters. It delivers low gate charge (56.5 nC), optimized Coss profile (102 pF), and 100% avalanche-tested ruggedness (EAS = 820 mJ) for industrial SMPS, PFC stages, and solar inverters.

For engineers reviewing the STI40N65M2 datasheet, STI40N65M2 pinout, STI40N65M2 application, or STI40N65M2 equivalent, key selection criteria include RDS(on) stability over temperature, dv/dt ruggedness (50 V/ns), unclamped inductive switching capability, and Zener-protected gate reliability under transient stress.

Technical Context

This device employs ST's MDmesh M2 strip layout and enhanced vertical structure to simultaneously reduce conduction loss and improve switching efficiency. Its low Coss (102 pF) and Crss (2.7 pF) enable fast turn-off with minimal voltage overshoot, while the 4.5 Ω intrinsic gate resistance supports robust gate drive design.

The MOSFET features a Zener-protected gate (±25 V rating), 100% single-pulse avalanche testing (IAR = 3 A, EAS = 820 mJ), and high dv/dt immunity (50 V/ns MOSFET ruggedness). Its source-drain diode exhibits trr = 468 ns and Qrr = 8.7 µC at TJ = 25 °C, supporting moderate-frequency synchronous rectification.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Withstands DC bus voltages up to 400 V in 3-phase PFC or 520 V in clamped topologies without breakdown.
R_DS(on) max	99 mΩ @ V_GS = 10 V, I_D = 16 A - Enables <1.6 W conduction loss at 32 A continuous drain current (T_C = 25 °C).
Q_g	56.5 nC - Reduces gate driver power demand and enables >100 kHz operation with standard 1-A drivers.
C_oss	102 pF @ V_DS = 100 V - Low output capacitance minimizes turn-on energy loss in ZVS circuits.
E_AS	820 mJ @ T_J = 25 °C - Guarantees safe unclamped inductive switching in flyback or LLC primary switches.
dv/dt ruggedness	50 V/ns - Prevents spurious turn-on during high-speed voltage transients in bridge-leg configurations.

Pinout & Package

TO-220 type A package with isolated tab (drain-connected), 3-pin through-hole mounting. Thermal resistance R_thJC = 0.5 °C/W enables 250 W dissipation at T_C = 25 °C with minimal heatsink.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal requiring ≤±25 V drive; Zener-clamped for ESD and transient protection.
2 (TAB/D)	Drain (exposed tab)	High-voltage power node; electrically connected to package tab-requires isolation from heatsink unless referenced to same potential.
3 (S)	Source	Power return path and gate reference; carries full load current and reverse diode conduction (I_SD = 32 A).

Key Features

Feature	Design Value
MDmesh M2 technology	Strip-based silicon architecture delivering 15% lower R_DS(on) × Q_g figure-of-merit vs. prior-generation 650 V MOSFETs.
Extremely low gate charge	Q_g = 56.5 nC enables efficient gate driving with low-power controllers and reduces switching losses by ~22% vs. comparable 600 V devices.
Optimized C_oss profile	C_oss = 102 pF with flat voltage dependence ensures predictable turn-on timing and reduced capacitive ringing in high-dV/dt environments.
100% avalanche tested	Each unit validated for single-pulse avalanche energy E_AS = 820 mJ-critical for reliability in non-ZVS hard-switched topologies.
Zener-protected gate	Integrated gate-source Zener clamp limits V_GS to ±25 V, eliminating need for external gate protection in noisy industrial environments.

Applications

Industrial SMPS

Server/Telecom PSU

Use Scenario: Primary-side switch in 1–3 kW active-clamp forward or half-bridge DC-DC converters operating at 100–200 kHz.

IC Role / Device Role / Timing Role: High-voltage power switch handling 400 V DC input, modulated via PWM controller with dead-time control.

Use Value: Low R_DS(on) and C_oss reduce total switching + conduction loss to <3.2 W at full load, improving system efficiency by 1.3% over legacy 600 V MOSFETs.

Use Scenario: PFC boost switch in 80 PLUS Titanium-certified 1.5 kW telecom rectifiers with interleaved dual-phase topology.

IC Role / Device Role / Timing Role: Fast-switching boost transistor synchronized to 65–110 kHz carrier, managing 20 A RMS input current.

Use Value: 50 V/ns dv/dt ruggedness prevents false triggering during line-voltage zero-crossing transients, ensuring stable PFC regulation.

Solar Microinverters

EV Onboard Charger

Use Scenario: DC-AC H-bridge leg switch in 300–500 W microinverters interfacing 30–60 V PV strings to 230 V AC grid.

IC Role / Device Role / Timing Role: Bidirectional hard-switched power valve operating in 16–22 kHz SPWM mode with body-diode commutation.

Use Value: 468 ns trr and 8.7 µC Q_rr limit reverse recovery loss to <0.45 W per device, enabling >98.2% peak conversion efficiency.

Use Scenario: Isolated DC-DC primary switch in 3.3–6.6 kW bidirectional OBCs using phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: 650 V-rated switch handling 520 V DC link, driven by isolated gate driver with adaptive dead-time control.

Use Value: 820 mJ E_AS rating supports fault-tolerant operation during short-circuit events without latch-up, meeting ISO 6469-3 safety requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP40N65M2	Same die, identical electrical specs; differs only in marking and order code (STI40N65M2 is obsolete per DS10875 Rev 2).	Identical use in TO-220-based designs; no layout or thermal change required.	Select STP40N65M2 for new designs-STI40N65M2 is discontinued and no longer supported.
IPP60R099C7	600 V rating, 99 mΩ R_DS(on), 53 nC Q_g, but lacks 100% avalanche test and Zener gate protection.	Acceptable in lower-bus-voltage (<380 V) SMPS where avalanche margin is relaxed and gate protection is externally implemented.	Choose only if system-level transient protection is already present and V_DS derating to 60% of rating is acceptable.

Compared with STI40N65M2, STP40N65M2 offers identical performance with active production status and full documentation support, while IPP60R099C7 trades ruggedness and integrated protection for slightly lower gate charge in cost-sensitive, lower-voltage applications.

Availability

STI40N65M2 is available at Aetrix Electronics and suitable for industrial SMPS, telecom power supplies, solar microinverters, and EV onboard chargers requiring stable component supply and long-term BOM continuity.

Supply support for STI40N65M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs and discrete power devices for industrial, automotive, and consumer markets.

The MDmesh M2 product line targets high-efficiency power conversion systems demanding low R_DS(on) × Q_g, high avalanche robustness, and reliable operation in harsh thermal and electrical environments.

FAQ

Is STI40N65M2 still in active production?

No-STI40N65M2 was removed from ST's active product portfolio as of December 2025 (DS10875 Rev 2). STP40N65M2 is the direct replacement with identical die, electrical characteristics, and packaging. Aetrix Electronics maintains limited legacy stock of STI40N65M2 for continuity support but recommends transitioning to STP40N65M2 for all new designs.

What is the maximum continuous drain current at 100 °C case temperature?

The maximum continuous drain current is 20 A at T_C = 100 °C, as specified in Table 1 of DS10875. This reflects thermal derating due to junction-to-case thermal resistance (R_thJC = 0.5 °C/W) and maximum rated junction temperature (T_J = 150 °C), limiting power dissipation to 100 W under those conditions.

Does STI40N65M2 require external gate protection?

No-STI40N65M2 integrates a Zener diode between gate and source, clamping V_GS to ±25 V. This eliminates the need for external gate protection components in most industrial applications, though a small series resistor (≤10 Ω) is still recommended to dampen gate ringing and limit peak current during fast edge transitions.

Can STI40N65M2 be used in synchronous rectification?

Not recommended as a synchronous rectifier-its body diode has trr = 468 ns and Q_rr = 8.7 µC, which causes significant reverse recovery loss and voltage spikes when commutated at >100 kHz. Dedicated low-Q_rr Schottky or GaN FETs are preferred for SR applications; STI40N65M2 is optimized for primary-side hard switching.

STI40N65M2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ M2

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 32A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 99mOhm @ 16A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 56.5 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 2355 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: I2PAK

STI40N65M2 FAQ

1.How can I place an order for STI40N65M2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STI40N65M2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STI40N65M2 reliable?

The price and inventory of STI40N65M2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STI40N65M2 is usually 5 days.

3.What payment methods are accepted for STI40N65M2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STI40N65M2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STI40N65M2?

STI40N65M2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STI40N65M2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STI40N65M2?

For technical support, including STI40N65M2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STI40N65M2 requirements.

6.How does Aetrix verify that STI40N65M2 is sourced from the original manufacturer or authorized distributors?

All STI40N65M2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STI40N65M2 meets industry standards.

7.What is the process for return or replacement of STI40N65M2?

All STI40N65M2 units undergo pre-shipment inspection (PSI). If there is an issue with STI40N65M2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STI40N65M2 part is unused and in its original packaging.

Return procedure for STI40N65M2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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