STMicroelectronics STI42N65M5

Overview

STI42N65M5 from STMicroelectronics is an N-channel 650 V, 70 mΩ typ. (79 mΩ max), 33 A MDmesh M5 Power MOSFET in I²PAK (TO-220AB) package, featuring 100% avalanche tested ruggedness, low gate charge (98 nC), and fast switching (td(v) = 52 ns, tr(v) = 8.4 ns). It serves as a high-efficiency primary-side switch in offline SMPS for industrial power supplies and solar inverters.

For engineers reviewing the STI42N65M5 datasheet, STI42N65M5 pinout, STI42N65M5 application, or STI42N65M5 equivalent, key selection criteria include R_DS(on) at 10 V, avalanche energy rating (E_AS = 950 mJ), diode reverse recovery performance (Q_rr = 7 µC), and thermal resistance (R_thj-case = 0.66 °C/W).

Technical Context

This device employs ST's MDmesh M5 vertical superjunction process combined with PowerMESH horizontal layout to achieve ultra-low R_DS(on) while maintaining high voltage blocking (650 V). Its optimized cell structure reduces input capacitance (C_iss = 4650 pF) and reverse transfer capacitance (C_rss = 3.2 pF), enabling high-frequency operation up to 100 kHz in hard-switched topologies.

The integrated body diode exhibits low forward voltage (V_SD = 1.5 V at 33 A) and controlled reverse recovery (t_rr = 400 ns at T_j = 25 °C), supporting ZVS-capable designs and reducing EMI in PFC and LLC resonant converters.

Key Specifications

Pinout & Package

I²PAK (TO-220AB) package with isolated tab (drain-connected), 3-pin through-hole mounting, 13–14 mm body height, and 10.0–10.4 mm width per ST mechanical data (Table 11). Tab is electrically connected to drain for direct heatsink mounting with isolation washer.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 650 V power MOSFET applications.

Compared with STP42N65M5 and STW42N65M5, STI42N65M5 offers identical electrical performance and thermal resistance but provides enhanced creepage/clearance via its I²PAK insulated tab-making it optimal for safety-critical AC-DC isolation barriers and compact board layouts where TO-220 footprint is insufficient and TO-247 is oversized.

Availability

STI42N65M5 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, solar microinverters, and EV onboard charger boost stages requiring stable component supply and long-term production continuity.

Supply support for STI42N65M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for industrial, automotive, and consumer markets.

STI42N65M5 belongs to the MDmesh M5 Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching in offline SMPS, PFC, and renewable energy conversion systems.

FAQ

What is the maximum gate-source voltage rating for STI42N65M5?

The absolute maximum V_GS is ±25 V, as specified in Table 1 of DS6033 Rev 4. Operation beyond this range risks permanent gate oxide damage. Recommended drive is 0 V (off) and +10 V to +15 V (on), with fast fall times to avoid Miller-induced false turn-on.

Does STI42N65M5 have an integrated body diode, and what are its key parameters?

Yes, it features a monolithic source-drain diode rated for 33 A continuous and 132 A pulsed current. Key parameters include V_SD = 1.5 V at 33 A, t_rr = 400 ns at 25 °C, Q_rr = 7 µC, and I_RRM = 35 A, all measured under standardized inductive switching conditions (Figure 21).

Can STI42N65M5 replace STP42N65M5 in an existing TO-220 footprint?

No - STI42N65M5 uses I²PAK (TO-220AB) package with different pin pitch (2.54 mm vs. 2.54 mm horizontal but 10.4 mm width vs. 10.4 mm), larger body height (13–14 mm vs. 13–14 mm), and isolated tab. PCB layout and heatsink interface must be redesigned to accommodate its insulated tab and footprint.

What is the safe operating area (SOA) limitation at 100 µs pulse width?

At 100 µs, the SOA is limited by R_DS(on) to 10 A at 400 V (Figure 1), corresponding to 4 kW instantaneous power. This reflects thermal inertia limits-not avalanche capability-and assumes T_j starts at 25 °C with no prior heating.