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STMicroelectronics STI45N10F7
- Part No.:
- STI45N10F7
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
STI45N10F7.pdf
- Description:
- MOSFET N-CH 100V 45A I2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:630
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Product details
Overview
STI45N10F7 from STMicroelectronics is an N-channel 100 V, 45 A Power MOSFET in I²PAK (TO-262) package, featuring 0.0145 Ω typ. RDS(on), 25 nC total gate charge, and 190 mJ single-pulse avalanche energy. It employs STripFET™ F7 trench-gate technology for high-efficiency switching in DC-DC converters and motor control stages.
For engineers reviewing the STI45N10F7 datasheet, STI45N10F7 pinout, STI45N10F7 application, or STI45N10F7 equivalent, this device is selected for high-current, medium-voltage power switching where low conduction loss, fast turn-on/off times (15 ns td(on), 8 ns tf), and robust avalanche capability are critical design requirements.
Technical Context
This MOSFET uses an enhanced trench-gate structure that reduces both RDS(on) and Crss/Ciss ratio-key for EMI immunity and reduced switching losses. Its 25 nC Qg and 12.2 nC Qgd support efficient gate drive with standard 10 V logic-level signals.
The device operates across -55 °C to 175 °C junction temperature, with 2.5 °C/W Rthj-case enabling high-power dissipation in compact heatsinked layouts. Its source-drain diode exhibits 1.1 V forward voltage at 45 A and 53 ns reverse recovery time, supporting synchronous rectification and freewheeling roles.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - supports 48 V bus systems with 2× safety margin against transients |
| RDS(on) typ. | 0.0145 Ω - delivers ≤15 W conduction loss at 45 A, reducing thermal load on PCB |
| ID cont. @ TC=100°C | 32 A - enables sustained operation in enclosed industrial enclosures without forced air |
| EAS | 190 mJ - withstands unclamped inductive switching events in motor drives and solenoid controls |
| Crss/Ciss ratio | 25/1640 pF = 0.015 - minimizes Miller-induced shoot-through risk in half-bridge configurations |
| tr/tf | 17 ns / 8 ns - allows >500 kHz PWM operation with low switching loss and reduced EMI filtering burden |
| VGS(th) | 2.5–4.5 V - compatible with 3.3 V and 5 V microcontroller GPIOs without level-shifting |
Pinout & Package
I²PAK (TO-262) package: thermally optimized 3-pin surface-mount-compatible outline with isolated tab (drain-connected), 13 mm × 14 mm footprint, 2.5 °C/W junction-to-case thermal resistance, and ECOPACK® RoHS-compliant finish.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control input | Receives 10 V gate drive; 25 nC Qg requires ≤2.5 Ω series resistor for <20 ns rise time |
| 2 (Drain) | High-side power path | Connected to internal die backside; tab must be electrically isolated and thermally coupled to heatsink |
| 3 (Source) | Reference node / return path | Serves as local ground reference for gate driver; carries full 45 A load current and diode recovery current |
Key Features
| Feature | Design Value |
|---|---|
| Lowest RDS(on) in 100 V class | 0.0145 Ω typ. enables higher efficiency than legacy F5/F6 MOSFETs in 48 V telecom PSUs |
| Optimized Crss/Ciss ratio | 0.015 ratio improves hard-switching stability and reduces gate drive power by ~30% vs. standard F7 variants |
| High avalanche ruggedness | 190 mJ EAS supports reliable operation in inductive load switching without external snubbers |
| Fast diode recovery | 53 ns trr and 67 nC Qrr minimize cross-conduction loss in synchronous buck topologies |
| Extended temperature range | -55 °C to 175 °C operation supports under-hood automotive and industrial motor control deployments |
Applications
| Industrial Motor Drives | Telecom DC-DC Converters |
|---|---|
Use Scenario: Half-bridge inverter stage driving 3-phase BLDC motors up to 1 kW. IC Role / Device Role / Timing Role: High-side and low-side switching element with synchronized gate timing and freewheeling diode conduction. Use Value: 0.0145 Ω RDS(on) reduces I²R loss by 22% vs. comparable 100 V MOSFETs, lowering heatsink size by 35%. |
Use Scenario: Primary-side switch in 48 V input, 12 V output isolated forward converter for base station power supplies. IC Role / Device Role / Timing Role: Main power switch operating at 250–500 kHz with zero-voltage switching assistance. Use Value: 25 nC Qg and 17 ns/8 ns tr/tf enable efficient high-frequency operation while maintaining <150 mW gate drive loss. |
| Automotive Body Control Modules | UPS Inverter Stages |
Use Scenario: Load switch for high-current solenoids and window lift actuators in 12 V/24 V vehicle systems. IC Role / Device Role / Timing Role: Single-ended switch with integrated avalanche energy handling during inductive kickback. Use Value: 190 mJ EAS eliminates need for external TVS clamping, simplifying BOM and improving reliability in ISO 7637-2 pulse testing. |
Use Scenario: Output H-bridge stage in online UPS delivering clean 230 V AC from 380 V DC bus. IC Role / Device Role / Timing Role: Low-loss switching device handling 20–30 A RMS output current with bidirectional conduction via body diode. Use Value: 1.1 V VSD at 45 A and 53 ns trr reduce freewheeling loss by 40% compared to standard silicon diodes in same package. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 100 V power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STD45N10F7 (DPAK) | Same die, but DPAK package: Rthj-case = 2.5 °C/W, lower mounting rigidity, no isolated tab | Better suited for space-constrained, low-volume PCB assembly; not recommended for >25 A continuous in ambient >60 °C | Select when board area is limited and thermal interface to heatsink is impractical |
| STP45N10F7 (TO-220) | Same die, TO-220 package: identical Rthj-case, but through-hole mounting and non-isolated tab requiring insulator kit | Preferred for prototyping, lab testing, and low-volume industrial controls where manual soldering is used | Select when mechanical robustness and field-serviceability outweigh SMT automation benefits |
Compared with STD45N10F7 and STP45N10F7, the STI45N10F7 offers superior thermal interface via its I²PAK isolated tab and compatibility with automated SMT reflow-making it optimal for high-reliability, volume-manufactured motor drives and telecom power systems.
Availability
STI45N10F7 is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC-DC converters, and automotive body control modules requiring stable component supply across multi-year production cycles.
Supply support for STI45N10F7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for industrial, automotive, and consumer markets.
The STripFET™ F7 product line targets high-efficiency power conversion, delivering best-in-class RDS(on) and switching performance for 40–150 V MOSFET applications in energy-sensitive systems.
FAQ
What is the maximum continuous drain current at 100 °C case temperature?
The STI45N10F7 supports 32 A continuous drain current at TC = 100 °C, as specified in Table 2 of the official datasheet (DocID024455 Rev 2). This rating assumes proper heatsinking and accounts for RDS(on) increase with junction temperature. Derating is required above 100 °C case temperature.
Is the I²PAK package lead-free and RoHS compliant?
Yes, the STI45N10F7 in I²PAK (TO-262) package is manufactured per STMicroelectronics' ECOPACK® standards and is fully RoHS compliant and lead-free. The device meets JEDEC J-STD-020 moisture sensitivity level (MSL) 1 and supports standard Pb-free reflow profiles up to 260 °C peak.
Does the body diode support synchronous rectification?
Yes-the intrinsic source-drain diode has a forward voltage of 1.1 V at 45 A and 53 ns reverse recovery time at 150 °C, enabling use in synchronous rectifier configurations. However, its Qrr of 67 nC and IRRM of 2.5 A require careful dead-time optimization to avoid cross-conduction in high-frequency buck converters.
Can STI45N10F7 replace STP45N10F7 in existing TO-220 designs?
No direct drop-in replacement: STI45N10F7 uses I²PAK (TO-262) with different pin spacing, tab isolation, and thermal pad layout. Mechanical redesign of footprint and heatsink interface is required. Electrical characteristics are identical, but layout changes must accommodate the 4.95–5.15 mm e1 pitch and isolated drain tab.
STI45N10F7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- DeepGATE™, STripFET™ VII
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 18mOhm @ 22.5A, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 25 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1640 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 60W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-262 (I2PAK)
STI45N10F7 FAQ
1.How can I place an order for STI45N10F7 through Aetrix?
Please submit a Request for Quotation (RFQ) for STI45N10F7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STI45N10F7 reliable?
The price and inventory of STI45N10F7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STI45N10F7 is usually 5 days.
3.What payment methods are accepted for STI45N10F7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STI45N10F7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STI45N10F7?
STI45N10F7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STI45N10F7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STI45N10F7?
For technical support, including STI45N10F7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STI45N10F7 requirements.
6.How does Aetrix verify that STI45N10F7 is sourced from the original manufacturer or authorized distributors?
All STI45N10F7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STI45N10F7 meets industry standards.
7.What is the process for return or replacement of STI45N10F7?
All STI45N10F7 units undergo pre-shipment inspection (PSI). If there is an issue with STI45N10F7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STI45N10F7 part is unused and in its original packaging.
Return procedure for STI45N10F7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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