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STMicroelectronics STI47N60DM6AG

Name: STI47N60DM6AG
Brand: STMicroelectronics
SKU: STI47N60DM6AG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STI47N60DM6AG

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: STI47N60DM6AG.pdf

Description:: POWER TRANSISTORS

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STI47N60DM6AG from STMicroelectronics is an AEC-Q101 qualified N-channel 600 V, 70 mΩ typ. (80 mΩ max), 36 A MDmesh™ DM6 Power MOSFET in I²PAK package, featuring fast-recovery body diode (trr = 115 ns @ 25°C), low gate charge (Qg = 55 nC), and Zener-protected gate, designed for high-efficiency bridge topologies and ZVS phase-shift converters in automotive and industrial power supplies.

For engineers reviewing the STI47N60DM6AG datasheet, STI47N60DM6AG pinout, STI47N60DM6AG application, or STI47N60DM6AG equivalent, key selection criteria include RDS(on) vs. temperature stability, dv/dt ruggedness (100 V/ns), avalanche energy rating (EAS = 700 mJ), and fast-recovery diode performance under hard-switching conditions.

Technical Context

This device implements ST's MDmesh™ DM6 silicon architecture optimized for high-voltage switching with minimized Qrr (0.54 µC @ 25°C) and trr (210 ns @ 150°C), enabling reduced switching losses in resonant and soft-switching topologies. Its intrinsic gate resistance (RG = 1.6 Ω) and low Crss (2 pF) support clean turn-off behavior under high dv/dt stress.

The integrated back-to-back gate-source Zener diodes (V(BR)GSO = ±30 V) provide robust ESD protection without external clamping components, while the 100% avalanche-tested design ensures reliability in unclamped inductive load conditions up to 7 A repetitive current and 700 mJ single-pulse energy.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports primary-side switching in 400 V AC-input PFC and offline SMPS designs
R_DS(on) max	80 mΩ @ V_GS = 10 V, I_D = 18 A - enables low conduction loss at rated current
I_D cont @ T_C = 100°C	23 A - defines usable continuous current in thermally constrained heatsink layouts
Q_g	55 nC - determines gate drive power requirement and switching speed control
trr	115 ns @ T_j = 25°C - reduces reverse recovery loss and EMI in bridge-leg commutation
dv/dt ruggedness	100 V/ns - sustains reliable operation during fast voltage transients in half/full-bridge circuits
E_AS	700 mJ @ T_j = 25°C - guarantees safe energy absorption during unclamped inductive switching events

Pinout & Package

The STI47N60DM6AG is housed in an I²PAK (TO-262 variant) package with exposed drain tab for thermal and electrical connection. The package features three leads: Gate (G), Drain (D), and Source (S), with the metal tab electrically connected to the Drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
Tab (Drain)	High-current drain path & thermal interface	Electrically tied to internal drain; must be isolated from heatsink unless system-level grounding permits
G (Gate)	Control input	Receives 10 V logic-level drive; protected by ±30 V Zener clamp
S (Source)	Power return & reference node	Serves as local ground reference for gate drive and current sensing

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive powertrain and body electronics applications requiring extended temperature and lifetime reliability
Fast-recovery body diode	Q_rr = 0.54 µC and t_rr = 115 ns enable efficient synchronous rectification replacement in LLC and phase-shifted full-bridge converters
Low R_DS(on) per area	70 mΩ typ. at 600 V improves power density over prior MDmesh generations without increasing die size
Zener-protected gate	Integrated ±30 V gate-source Zener eliminates need for external TVS in gate drive circuitry
100% avalanche tested	Ensures consistent single-pulse and repetitive avalanche capability across production lots

Applications

Automotive On-Board Charger (OBC)

Industrial PFC Front-End

Use Scenario: Bidirectional AC/DC conversion in 11 kW OBCs using interleaved totem-pole PFC and dual-active-bridge DC/DC stages.

IC Role / Device Role / Timing Role: Primary-side high-side switch in totem-pole PFC leg, operating at 65–100 kHz with zero-voltage switching.

Use Value: Low Q_rr and fast t_rr minimize body-diode conduction loss during dead-time, improving efficiency by ≥0.8% at full load.

Use Scenario: Three-phase active front-end for servo drives and UPS systems requiring >98% efficiency and THD <5%.

IC Role / Device Role / Timing Role: Switching element in Vienna rectifier topology, handling 600 V DC-link voltage and 30 A RMS line current.

Use Value: 100 V/ns dv/dt ruggedness prevents false turn-on during bus voltage transients caused by adjacent IGBT switching.

Server PSU LLC Resonant Converter

EV Charging Station DC/DC Stage

Use Scenario: Secondary-side synchronous rectification and primary-side switching in 3.3 kW server PSUs with digital control.

IC Role / Device Role / Timing Role: High-side switch in asymmetric half-bridge LLC primary, operating at 250–500 kHz with variable frequency modulation.

Use Value: C_oss eq. = 416 pF enables predictable ZVS transition timing across wide load range, reducing control loop complexity.

Use Scenario: Isolated DC/DC stage in 20 kW liquid-cooled EV charging modules converting 400–800 V DC input to 400 V battery output.

IC Role / Device Role / Timing Role: Low-side switch in phase-shifted full-bridge, subjected to high di/dt (≥800 A/µs) during ZVS transitions.

Use Value: Extremely high dv/dt ruggedness (100 V/ns) and low Q_gd/Q_gs ratio ensure stable gate voltage during rapid V_DS slew, preventing shoot-through.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXFH40N60X	R_DS(on) = 100 mΩ max; Q_g = 65 nC; no integrated Zener; trr = 160 ns	Lacks gate Zener protection and exhibits higher Q_rr, requiring external gate clamping and increased snubber sizing	Preferred where cost sensitivity outweighs gate protection and diode recovery requirements
IPP60R099C7	R_DS(on) = 99 mΩ max; Q_g = 42 nC; CoolMOS™ C7 process; no AEC-Q101 rating	Lower gate charge but lacks automotive qualification and has higher R_DS(on), limiting thermal margin in high-current OBC use	Suitable for industrial SMPS where AEC-Q101 is not mandated and gate drive power is critical

Compared with IXFH40N60X and IPP60R099C7, STI47N60DM6AG delivers superior R_DS(on) density, integrated gate protection, and AEC-Q101 compliance-making it optimal for automotive-grade high-efficiency converters where reliability under transient stress is non-negotiable.

Availability

STI47N60DM6AG is available at Aetrix Electronics and suitable for automotive on-board chargers, industrial PFC front-ends, and server PSU LLC resonant converters requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for STI47N60DM6AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

This part belongs to the MDmesh™ DM6 family-engineered specifically for high-frequency, high-efficiency high-voltage switching in automotive and industrial power conversion, emphasizing low Q_rr, rugged dv/dt immunity, and gate robustness.

FAQ

What is the maximum continuous drain current at case temperature of 100°C?

The STI47N60DM6AG supports 23 A continuous drain current when the case temperature is maintained at 100°C, as specified in Table 1 of DS12101 Rev 3. This rating reflects derating due to thermal resistance (R_thj-case = 0.5 °C/W) and ensures safe operation within SOA limits under sustained load conditions.

Does this MOSFET require external gate protection?

No. The device integrates back-to-back gate-source Zener diodes with ±30 V breakdown voltage (Table 8), providing inherent ESD and overvoltage protection. External gate clamping is unnecessary unless system-level transients exceed ±30 V or demand faster response than the built-in Zeners can deliver.

How does the fast-recovery body diode improve converter efficiency?

The body diode achieves t_rr = 115 ns and Q_rr = 0.54 µC at 25°C, reducing reverse recovery loss and associated switching spikes. In bridge topologies, this minimizes overlap conduction loss and EMI generation during dead-time commutation-directly improving full-load efficiency by up to 0.8% in totem-pole PFC designs.

Is the I²PAK package lead-free and RoHS-compliant?

Yes. ST specifies this device as ECOPACK®-compliant, meeting RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. The I²PAK package uses lead-free terminations and halogen-free molding compound, with full environmental compliance documentation available via ST's official product page and packaging data sheets.

STI47N60DM6AG Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ DM6

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 36A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 80mOhm @ 18A, 10V

Vgs(th) (Max) @ Id:: 4.75V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 55 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 2350 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: TO-262 (I2PAK)

STI47N60DM6AG FAQ

1.How can I place an order for STI47N60DM6AG through Aetrix?

Please submit a Request for Quotation (RFQ) for STI47N60DM6AG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STI47N60DM6AG reliable?

The price and inventory of STI47N60DM6AG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STI47N60DM6AG is usually 5 days.

3.What payment methods are accepted for STI47N60DM6AG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STI47N60DM6AG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STI47N60DM6AG?

STI47N60DM6AG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STI47N60DM6AG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STI47N60DM6AG?

For technical support, including STI47N60DM6AG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STI47N60DM6AG requirements.

6.How does Aetrix verify that STI47N60DM6AG is sourced from the original manufacturer or authorized distributors?

All STI47N60DM6AG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STI47N60DM6AG meets industry standards.

7.What is the process for return or replacement of STI47N60DM6AG?

All STI47N60DM6AG units undergo pre-shipment inspection (PSI). If there is an issue with STI47N60DM6AG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STI47N60DM6AG part is unused and in its original packaging.

Return procedure for STI47N60DM6AG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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