STMicroelectronics STI57N65M5

Overview

STI57N65M5 from STMicroelectronics is an N-channel 650 V, 56 mΩ typ. (63 mΩ max), 42 A Power MOSFET based on MDmesh M5 vertical process technology in TO-220FP package. It delivers ultra-low R_DS(on), 98 nC total gate charge, and 15 V/ns dv/dt ruggedness for high-efficiency hard-switching in offline SMPS and PFC stages.

For engineers reviewing the STI57N65M5 datasheet, STI57N65M5 pinout, STI57N65M5 application, or STI57N65M5 equivalent, key selection criteria include avalanche energy rating (960 mJ), source-drain diode recovery (418 ns @ 25 °C), thermal resistance (R_thJC = 3.1 °C/W), and gate threshold voltage (3–5 V).

Technical Context

This device implements ST's MDmesh M5 superjunction architecture with optimized charge balancing for reduced specific on-resistance and enhanced switching speed. Its low C_iss (4200 pF) and C_rss (9 pF) enable fast voltage transitions while maintaining EMI control under 400 V bus conditions.

The integrated body diode features soft reverse recovery (Q_rr = 8 μC, I_RRM = 40 A) and is fully rated for 42 A continuous conduction, supporting synchronous rectification and bidirectional power flow in resonant topologies.

Key Specifications

Pinout & Package

STI57N65M5 is housed in TO-220FP (Full-Pak) package with isolated tab: plastic body, no metal tab exposure, 3.1 °C/W junction-to-case thermal resistance, and creepage/clearance compliant with IEC 60950-1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STP57N65M5 and STB57N65M5, STI57N65M5 trades 0.5 °C/W thermal resistance for electrical isolation and simplified mechanical mounting-ideal for safety-critical, enclosed, or UL/EN 62368-1 certified systems requiring reinforced insulation.

Availability

STI57N65M5 is available at Aetrix Electronics and suitable for server power supplies, industrial PFC modules, telecom rectifiers, and EV onboard chargers requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for STI57N65M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STI57N65M5 belongs to the MDmesh M5 Power MOSFET product line, engineered specifically for high-efficiency, high-reliability 650 V switching in mission-critical AC/DC and DC/DC conversion systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STI57N65M5 supports 26.5 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS8913 Rev 6. This rating is limited by junction temperature (T_J ≤ 150 °C) and accounts for thermal resistance R_thJC = 3.1 °C/W in TO-220FP package.

Does STI57N65M5 have an integrated body diode, and what are its key recovery parameters?

Yes, STI57N65M5 includes a monolithic source-drain body diode rated for 42 A continuous and 168 A pulsed conduction. At T_J = 25 °C, it exhibits t_rr = 418 ns, Q_rr = 8 μC, and I_RRM = 40 A under standard test conditions (ISD = 42 A, di/dt = 100 A/μs, VDD = 100 V).

Is STI57N65M5 suitable for zero-voltage switching (ZVS) topologies?

Yes-its low C_oss (115 pF) and Co(er) (93 pF), combined with soft-recovery diode behavior, make it well-suited for phase-shifted full-bridge and LLC resonant converters. The 15 V/ns dv/dt rating ensures robustness during ZVS transitions with high di/dt stress.

What is the gate threshold voltage range, and how does it vary with temperature?

V_GS(th) is specified from 3 V to 5 V at T_J = 25 °C (Table 4). Figure 11 shows normalized V_GS(th) decreases to ~0.8× nominal at T_J = 150 °C, meaning actual threshold drops to approximately 2.4–4.0 V at elevated junction temperatures-critical for gate drive margin design.