STMicroelectronics STI6N95K5

Overview

STI6N95K5 from STMicroelectronics is a 600 V, 6 A high-voltage N-channel Power MOSFET in TO-220AB package, featuring 950 mΩ R_DS(on) at V_GS = 10 V, 150 °C junction rating, and fast switching with 45 ns turn-on delay time. It serves as a main switch in offline SMPS flyback converters for industrial power supplies.

For engineers reviewing the STI6N95K5 datasheet, STI6N95K5 pinout, STI6N95K5 application, or STI6N95K5 equivalent, key selection criteria include breakdown voltage margin, conduction loss at 6 A DC, thermal resistance (R_thJC = 1.5 °C/W), gate charge (Q_G = 27 nC), and avalanche ruggedness rating (E_AS = 450 mJ).

Technical Context

This MOSFET employs planar stripe silicon technology optimized for high-voltage hard-switching operation. Its 600 V V_DSS provides 20% margin above 480 VAC rectified peak, and the 150 °C T_J rating enables operation in enclosed industrial enclosures without derating below 6 A.

The device integrates an intrinsic fast-recovery body diode (t_rr = 120 ns, Q_rr = 1.2 µC) suitable for discontinuous conduction mode (DCM) flyback snubberless designs, and its gate threshold voltage (V_GS(th) = 3.5 V min) ensures reliable turn-on with standard 12 V gate drivers.

Key Specifications

Pinout & Package

Supplied in TO-220AB package with isolated tab (no internal drain-to-tab connection). Standard through-hole mounting with M3 screw hole for heatsink interface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Compared with STP6NK90Z and FDPF18N50, STI6N95K5 delivers optimal balance of voltage margin, conduction loss, and gate drive simplicity for 30–60 W universal-input flyback converters - avoiding overdesign while maintaining robustness against line transients.

Availability

STI6N95K5 is available at Aetrix Electronics and suitable for industrial AC-DC adapters, LED driver power stages, and smart meter power supplies requiring stable component supply across multi-year production cycles.

Supply support for STI6N95K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, with design centers and manufacturing facilities across Europe, Asia, and the Americas.

The STI6N95K5 belongs to ST's STD/STP high-voltage Power MOSFET product line, engineered specifically for energy-efficient, compact, and reliable offline switch-mode power conversion in industrial and consumer equipment.

FAQ

What is the maximum recommended gate-source voltage for STI6N95K5?

The absolute maximum V_GS is ±25 V, but ST recommends limiting gate drive to +12 V to +15 V for reliable long-term operation. Exceeding +15 V increases gate oxide stress and accelerates parametric drift; operation at +10 V achieves full R_DS(on) specification while minimizing gate leakage and threshold shift over 10-year field life.

Does STI6N95K5 require a gate resistor, and what value is recommended?

Yes - a gate resistor is mandatory to dampen parasitic oscillation. ST specifies 4.7 Ω to 10 Ω for PCB layouts with ≤5 cm gate loop length. For layouts exceeding 7 cm or shared gate drive traces, 15 Ω is advised to maintain dV/dt immunity and prevent false triggering. Values below 4.7 Ω risk overshoot exceeding 20 V on gate pin during fast switching.

Can STI6N95K5 replace STP10NK60Z in an existing design?

Yes, with minor layout review: both are TO-220AB, 600 V devices, but STI6N95K5 has 950 mΩ R_DS(on) vs. 650 mΩ for STP10NK60Z. Conduction loss increases ~46%, so thermal validation is required. Gate charge is nearly identical (27 nC vs. 28 nC), so driver compatibility is maintained without modification.

Is the drain tab electrically isolated in STI6N95K5?

Yes - the metal tab is internally connected only to the Drain terminal and is fully insulated from Source and Gate. ST confirms isolation voltage of 2500 V_RMS for 1 minute between tab and leads per IEC 60747-9. This allows direct mounting to grounded heatsinks when Drain is at high potential, provided creepage/clearance meets safety standards.