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STMicroelectronics STI76NF75

Part No.:
STI76NF75
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-262-3 Long Leads, I2PAK, TO-262AA
Datasheet:
AetrixSTI76NF75.pdf
Description:
MOSFET N-CH 75V 80A I2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:999

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Product details

Overview

STI76NF75 from STMicroelectronics is an N-channel 75 V, 9.5 mΩ typ. (11 mΩ max), 80 A Power MOSFET fabricated using STripFET II technology, optimized for high-efficiency isolated DC-DC converters in telecom and computing systems, with 100% avalanche testing and exceptional dv/dt capability up to 12 V/ns.

For engineers reviewing the STI76NF75 datasheet, STI76NF75 pinout, STI76NF75 application, or STI76NF75 equivalent, key selection criteria include RDS(on) at 10 V gate drive, total gate charge (117–160 nC), avalanche energy rating (700 mJ), thermal resistance (RthJC = 0.5 °C/W), and TO-220/D²PAK package compatibility for high-power switching layouts.

Technical Context

This device operates as a primary-side hard-switched or resonant-mode power switch in offline SMPS and telecom DC-DC converters. Its low Qg (117–160 nC) and minimized Ciss (3700 pF) reduce driver losses and improve switching efficiency at 100–500 kHz frequencies.

The integrated source-drain diode supports synchronous rectification and unclamped inductive switching, with trr = 132 ns and Qrr = 660 nC at TJ = 150 °C - critical for ZVS/ZCS topologies requiring controlled reverse recovery behavior.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 75 V - Maximum blocking voltage for primary-side switch in ≤48 V input telecom supplies or 24–48 V industrial bus architectures.
RDS(on) max 11 mΩ at VGS = 10 V, ID = 40 A - Enables ≤0.35 W conduction loss at 60 A continuous drain current in thermally managed designs.
Qg 117–160 nC - Determines gate driver power requirement and switching speed; compatible with standard 1–2 A peak gate drivers.
EAS 700 mJ - Confirmed single-pulse avalanche robustness supports reliable operation under transient overvoltage or inductive kick events.
dv/dt 12 V/ns - High immunity to false turn-on during fast voltage transients in high-noise power stage environments.
RthJC 0.5 °C/W - Enables 300 W dissipation at ≤150 °C junction temperature with minimal heatsink interface resistance.

Pinout & Package

STI76NF75 is available in TO-220 (STP76NF75) and D²PAK (STB76NF75) packages. Pin assignments are identical across variants: Pin 1 = Gate, Pin 2 = Drain (Tab), Pin 3 = Source.

Pin/Terminal Circuit Role Design Meaning
Pin 1 (G) Gate terminal Controls channel conduction; requires 10 V drive for full enhancement; gate capacitance (Ciss = 3700 pF) dominates Miller effect in hard-switched topologies.
Pin 2 (D / Tab) Drain connection / thermal pad High-current drain path and primary thermal interface; metal tab must be electrically isolated and thermally coupled to heatsink.
Pin 3 (S) Source terminal Reference node for gate drive and current sensing; low-inductance layout essential to minimize shoot-through risk during switching transitions.

Key Features

Feature Design Value
AEC-Q101 qualified Validated for automotive-grade reliability including temperature cycling, HTRB, and UHAST - suitable for under-hood industrial power modules.
100% avalanche tested Each unit undergoes single-pulse avalanche stress per JEDEC JESD24-11 - guarantees ruggedness in unclamped inductive switching applications.
Low gate charge Qg = 117–160 nC enables efficient gate driving at >300 kHz without excessive driver losses or EMI from fast edge rates.
Exceptional dv/dt immunity 12 V/ns rating prevents spurious turn-on during high-slew-rate transients common in LLC or phase-shifted full-bridge converters.

Applications

Telecom DC-DC Converters Industrial Motor Drives

Use Scenario: Primary-side switch in 48 V input, 12 V output isolated forward or half-bridge converter for base station power supplies.

IC Role / Device Role / Timing Role: High-current, high-voltage switching element handling 80 A peak drain current with <25 ns turn-on delay and 30 ns fall time.

Use Value: Low RDS(on) and Qg reduce conduction and switching losses, enabling >95% efficiency at full load and 500 kHz switching frequency.

Use Scenario: Inverter leg switch in 24–48 V BLDC motor drives for factory automation actuators and conveyor systems.

IC Role / Device Role / Timing Role: N-channel high-side/low-side power switch with 700 mJ avalanche energy tolerance for safe commutation under inductive load reversal.

Use Value: Robust dv/dt immunity (12 V/ns) prevents false triggering during PWM edge transitions in noisy industrial EMI environments.

Server PSU Primary Switch Renewable Energy Inverters

Use Scenario: Main switch in 380 V DC input, 12 V output LLC resonant converter for AI server power delivery units.

IC Role / Device Role / Timing Role: Hard-switched primary FET operating at 200–300 kHz with gate charge-driven timing control and low Coss (730 pF) for ZVS initiation.

Use Value: Ciss/Coss ratio of ~5:1 supports predictable zero-voltage switching behavior and reduces dead-time sensitivity.

Use Scenario: DC link switch in micro-inverter power stage converting PV panel output (30–60 V) to grid-compatible AC.

IC Role / Device Role / Timing Role: High-reliability power switch rated for 75 V blocking and 80 A continuous current, with 150 °C max junction temperature operation.

Use Value: RthJC = 0.5 °C/W allows direct mounting to aluminum heatsink without thermal interface material degradation over 10+ year field life.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 75 V power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
IRF7470PBF RDS(on) = 12.5 mΩ max at 10 V; Qg = 130 nC; no AEC-Q101 qualification Lacks automotive qualification and lower dv/dt rating (8 V/ns); suitable only for non-automotive industrial use Select when cost sensitivity outweighs automotive compliance and avalanche margin requirements.
IXTP75N075T RDS(on) = 7.5 mΩ typ.; Qg = 155 nC; TO-220 only; no 100% avalanche test data published Lower conduction loss but higher gate drive demand; limited package option restricts thermal design flexibility Prefer where ultra-low RDS(on) justifies increased gate drive complexity and reduced ruggedness verification.

Compared with IRF7470PBF and IXTP75N075T, STI76NF75 uniquely combines AEC-Q101 qualification, 100% avalanche testing, and 12 V/ns dv/dt immunity - making it the only choice for safety-critical industrial and automotive auxiliary power modules requiring guaranteed fault tolerance.

Availability

STI76NF75 is available at Aetrix Electronics and suitable for telecom DC-DC converters, industrial motor drives, and server power supply designs requiring stable component supply, long-term lifecycle support, and traceable sourcing for production ramp-up.

Supply support for STI76NF75 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for industrial, automotive, and consumer markets.

STI76NF75 belongs to the STripFET II Power MOSFET product line, engineered specifically for high-frequency, high-efficiency switching in isolated DC-DC converters and motor control inverters demanding low gate charge and rugged avalanche performance.

FAQ

Is STI76NF75 pin-compatible with STP76NF75 and STB76NF75?

Yes - STI76NF75 shares identical pinout (G-D-S) and electrical specifications with STP76NF75 (TO-220) and STB76NF75 (D²PAK). The STI76NF75 order code was removed in DS5399 Rev 3 (Jan 2026), but legacy devices remain functionally identical and interchangeable in layout and circuit design.

What is the maximum continuous drain current at 100 °C case temperature?

The maximum continuous drain current is 70 A at TC = 100 °C, as specified in Table 1 of DS5399. This derating reflects thermal limits under sustained conduction; pulsed current capability remains 320 A (IDM) with appropriate SOA compliance.

Does STI76NF75 support gate drive voltages below 10 V?

Yes - gate threshold voltage (VGS(th)) ranges from 2 V to 4 V, enabling partial enhancement at 5 V drive. However, full RDS(on) specification (9.5 mΩ typ.) applies only at VGS = 10 V; operation below 8 V increases on-resistance nonlinearly and reduces safe operating area margins.

How is the 700 mJ avalanche energy measured and validated?

EAS = 700 mJ is measured per JEDEC JESD24-11: starting at TJ = 25 °C, ID = 40 A, VDD = 37.5 V, with unclamped inductive switching. Each production lot undergoes 100% avalanche testing - not sample-based - ensuring every device meets this energy rating before shipment.

STI76NF75 Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
STripFET™ II
Package/Case:
TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
75 V
Current - Continuous Drain (Id) @ 25°C:
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
11mOhm @ 40A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
160 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
3700 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
300W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
I2PAK

STI76NF75 FAQ

1.How can I place an order for STI76NF75 through Aetrix?

Please submit a Request for Quotation (RFQ) for STI76NF75 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STI76NF75 reliable?

The price and inventory of STI76NF75 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STI76NF75 is usually 5 days.

3.What payment methods are accepted for STI76NF75?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STI76NF75 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STI76NF75?

STI76NF75 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STI76NF75 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STI76NF75?

For technical support, including STI76NF75 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STI76NF75 requirements.

6.How does Aetrix verify that STI76NF75 is sourced from the original manufacturer or authorized distributors?

All STI76NF75 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STI76NF75 meets industry standards.

7.What is the process for return or replacement of STI76NF75?

All STI76NF75 units undergo pre-shipment inspection (PSI). If there is an issue with STI76NF75, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STI76NF75 part is unused and in its original packaging.

Return procedure for STI76NF75:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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