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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STI8N65M5

Name: STI8N65M5
Brand: STMicroelectronics
SKU: STI8N65M5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STI8N65M5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: STI8N65M5.pdf

Description:: MOSFET N-CH 650V 7A I2PAK

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Product details

Overview

STI8N65M5 from STMicroelectronics is an N-channel 650 V, 560 mΩ typ., 7 A MDmesh M5 Power MOSFET in D²PAK (TO-263) package, designed for high-efficiency switching in offline SMPS, PFC stages, and industrial motor drives. It features 100% avalanche tested ruggedness, low gate charge (15 nC), and fast switching with 200 ns reverse recovery time.

For engineers reviewing the STI8N65M5 datasheet, STI8N65M5 pinout, STI8N65M5 application, or STI8N65M5 equivalent, key selection criteria include R_DS(on) stability over temperature, unclamped inductive switching capability, thermal resistance (R_thJC = 1.79 °C/W), and integrated body diode performance for hard-switched topologies.

Technical Context

This device employs ST's MDmesh M5 vertical superjunction process combined with PowerMESH horizontal layout to achieve ultra-low on-resistance while maintaining high voltage blocking (650 V). Its optimized charge profile enables efficient operation at high frequencies up to 100 kHz in continuous conduction mode PFC.

The integrated source-drain diode delivers 7 A continuous forward current with 1.5 V typical V_SD, 200 ns t_rr at 25 °C, and 1.6 µC Q_rr, supporting ZVS-capable flyback and LLC resonant converters without external diode replacement.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Enables direct use in universal-input (85–265 VAC) offline converters without voltage derating concerns.
R_DS(on) max	600 mΩ - Confirmed at V_GS = 10 V, I_D = 3.5 A; ensures <1.5 W conduction loss at 7 A DC.
I_D (T_C = 25 °C)	7 A - Continuous drain current rating supports 100–200 W power stages with conservative heatsinking.
Q_g	15 nC - Low total gate charge reduces driver power demand and enables fast turn-on/turn-off transitions.
E_AS	120 mJ - Single-pulse avalanche energy rating validates robustness under transient overvoltage conditions.
t_rr	200 ns - Reverse recovery time measured at I_SD = 7 A, di/dt = 100 A/µs, critical for minimizing switching losses in hard-switched topologies.
R_thJC	1.79 °C/W - Junction-to-case thermal resistance enables direct mounting to heatsink for high-power density designs.

Pinout & Package

D²PAK (TO-263) package: surface-mount, single-row 3-lead outline with exposed drain tab for thermal and electrical connection. Dimensions per Table 8 (DS6548 Rev 7): D = 8.95–9.35 mm, E = 10.00–10.40 mm, H = 15.00–15.85 mm.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal requiring ≤±25 V drive; low input capacitance (C_iss = 690 pF) minimizes Miller effect.
2 (D / TAB)	Drain / Exposed Pad	Main high-side power path; electrically and thermally connected to PCB copper pour via soldered tab.
3 (S)	Source	Reference node for gate drive and current sensing; tied to power ground in low-side switch configurations.

Key Features

Feature	Design Value
MDmesh M5 superjunction technology	Delivers 560 mΩ typ. R_DS(on) at 650 V, reducing conduction loss by >30% vs. prior-generation 600 V MOSFETs.
100% avalanche tested	Guarantees single-pulse E_AS ≥ 120 mJ, enabling reliable operation in unclamped inductive load conditions.
Low Q_gd/Q_g ratio	Q_gd = 6 nC of total Q_g = 15 nC - improves controllability during Miller plateau and reduces risk of spurious turn-on.
Fast body diode recovery	t_rr = 200 ns, Q_rr = 1.6 µC - lowers diode-induced switching loss and EMI in bridge-leg configurations.
ECOPACK® compliant	Meets RoHS and halogen-free requirements; suitable for industrial and consumer equipment with environmental compliance mandates.

Applications

Server PSU Primary Switch

Industrial PFC Boost Stage

Use Scenario: High-density 1U server power supply operating in continuous conduction mode (CCM) with 3.3 kW output.

IC Role / Device Role / Timing Role: Main switching FET in interleaved boost PFC front-end, switching at 65 kHz with synchronous rectification.

Use Value: 560 mΩ R_DS(on) and 1.79 °C/W R_thJC enable >96% efficiency at full load without forced air cooling.

Use Scenario: 3 kW industrial motor drive with active front-end rectifier and regenerative braking.

IC Role / Device Role / Timing Role: High-side boost switch in three-phase PFC module, handling 12 A peak line current per phase.

Use Value: 120 mJ E_AS and 200 ns t_rr ensure reliable operation during grid transients and regenerative energy dump events.

LED Streetlight Driver

EV Onboard Charger AC/DC Stage

Use Scenario: Outdoor-rated 200 W constant-current LED driver with surge immunity to ±6 kV line transients.

IC Role / Device Role / Timing Role: Primary-side switch in quasi-resonant flyback topology, operating in boundary conduction mode (BCM).

Use Value: 650 V V_DS rating and 100% avalanche testing eliminate need for external clamping circuits in surge-prone environments.

Use Scenario: Bidirectional 6.6 kW OBC with dual-active-bridge (DAB) isolation and GaN-assisted soft switching.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier switch in LLC resonant converter, commutated at zero voltage.

Use Value: Low Q_g (15 nC) and fast t_rr (200 ns) reduce gate drive loss and minimize dead-time conduction loss in bidirectional operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STB8N65M5	D²PAK package, identical R_DS(on) (560 mΩ typ.), same 650 V rating, but rated for 70 W P_TOT vs. STI8N65M5's 70 W (same thermal limit).	Same footprint and thermal performance; differs only in marking and internal traceability code.	Select STB8N65M5 when sourcing from legacy inventory or distributor stock with identical D²PAK mechanicals.
IPW65R060CFD7	Infineon CoolMOS CFD7: 650 V, 60 mΩ typ., 15 A, TO-247; lower R_DS(on) but higher Q_g (52 nC) and larger package.	Requires redesign for TO-247 mounting and gate drive strength; superior for >300 W applications where conduction loss dominates.	Choose only if system-level efficiency gain justifies PCB rework and increased gate drive complexity.

Compared with STB8N65M5, STI8N65M5 offers identical electrical specs and thermal behavior in the same D²PAK package-differing only in internal lot coding-while IPW65R060CFD7 trades higher cost and board space for significantly lower conduction loss in high-current, low-frequency applications.

Availability

STI8N65M5 is available at Aetrix Electronics and suitable for industrial motor drives, server PSUs, and LED streetlight drivers requiring stable component supply across multi-year production cycles.

Supply support for STI8N65M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power applications.

STI8N65M5 belongs to the MDmesh M5 Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 650 V offline power conversion systems.

FAQ

What is the maximum continuous drain current for STI8N65M5 at 100 °C case temperature?

The maximum continuous drain current is 4.4 A at T_C = 100 °C, as specified in Table 1 of DS6548 Rev 7. This rating is limited by junction temperature (T_J ≤ 150 °C) and accounts for thermal derating due to reduced R_thJC effectiveness at elevated case temperatures.

Does STI8N65M5 have an integrated body diode, and what are its key recovery parameters?

Yes, it includes a monolithic source-drain diode rated for 7 A continuous forward current. Key recovery specs at 25 °C are t_rr = 200 ns, Q_rr = 1.6 µC, and I_RRM = 16 A, measured under ISD = 7 A, di/dt = 100 A/µs, and V_DD = 100 V per Table 7.

Can STI8N65M5 be used in avalanche mode, and what is its guaranteed energy rating?

Yes, STI8N65M5 is 100% avalanche tested with a guaranteed single-pulse avalanche energy (E_AS) of 120 mJ at starting T_J = 25 °C, I_AR = 2 A, and V_DD = 50 V, as defined in Table 3 of the datasheet.

What is the gate threshold voltage range, and how does it vary with temperature?

V_GS(th) is specified from 3 V (min) to 5 V (max) at 25 °C, with typical value 4 V. Figure 13 shows normalized V_GS(th) decreases to ~0.8× nominal at 100 °C, indicating predictable negative temperature coefficient for stable biasing in wide-temperature applications.

STI8N65M5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ V

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 600mOhm @ 3.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 15 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 690 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 70W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: I2PAK

STI8N65M5 FAQ

1.How can I place an order for STI8N65M5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STI8N65M5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STI8N65M5 reliable?

The price and inventory of STI8N65M5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STI8N65M5 is usually 5 days.

3.What payment methods are accepted for STI8N65M5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STI8N65M5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STI8N65M5?

STI8N65M5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STI8N65M5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STI8N65M5?

For technical support, including STI8N65M5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STI8N65M5 requirements.

6.How does Aetrix verify that STI8N65M5 is sourced from the original manufacturer or authorized distributors?

All STI8N65M5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STI8N65M5 meets industry standards.

7.What is the process for return or replacement of STI8N65M5?

All STI8N65M5 units undergo pre-shipment inspection (PSI). If there is an issue with STI8N65M5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STI8N65M5 part is unused and in its original packaging.

Return procedure for STI8N65M5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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