STMicroelectronics STK22N6F3

Overview

STK22N6F3 from STMicroelectronics is an N-channel 60 V, 22 A PolarPAK® Power MOSFET with R_DS(on) = 0.0055 Ω at V_GS = 10 V, optimized for high-efficiency switching in DC-DC converters and motor control stages. It features ultra-low junction-to-case thermal resistance (0.8 °C/W top drain), 88 A pulsed drain current, and high avalanche ruggedness (800 mJ single-pulse).

For engineers reviewing the STK22N6F3 datasheet, STK22N6F3 pinout, STK22N6F3 application, or STK22N6F3 equivalent, key selection criteria include on-resistance vs. temperature stability, gate charge (41 nC total), source-drain diode recovery (49 ns trr), and PolarPAK® package thermal performance in compact power stages.

Technical Context

This STripFET™ III MOSFET uses a trench-gate structure to minimize R_DS(on) while maintaining fast switching (t_d(on) = 16 ns, t_f = 5 ns) and low gate charge (Q_gd = 10 nC). Its dual-side cooling PolarPAK® package enables direct top-side heatsinking and bottom-source thermal path.

The device supports unclamped inductive switching with guaranteed avalanche energy (E_AS = 800 mJ), operates across –55 °C to 150 °C junction range, and integrates a robust body diode (V_SD = 1.2 V at 22 A, Q_rr = 91 nC) for synchronous rectification and flyback recovery.

Key Specifications

Pinout & Package

PolarPAK® package: 5-pin surface-mount, top-drain metal tab (exposed D), source-connected pins S1/S2/S3, gate G, and sense pin S4. Designed for dual thermal interface-top-side heatsink contact and bottom-side PCB copper area.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with SI2302DS and IPP040N04LG, STK22N6F3 uniquely balances ultra-low R_DS(on), surface-mount PolarPAK® thermal performance, and Kelvin source sensing-making it optimal for compact, high-efficiency 20–30 A switching stages where layout density and thermal management are critical.

Availability

STK22N6F3 is available at Aetrix Electronics and suitable for DC-DC converters, brushed motor drivers, and LED current regulators requiring stable component supply amid industrial and telecom power design cycles.

Supply support for STK22N6F3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STK22N6F3 belongs to ST's STripFET™ III Power MOSFET product line, engineered specifically for high-frequency, high-efficiency switching in space-constrained power supplies and motor drives.

FAQ

Is STK22N6F3 RoHS-compliant and lead-free?

Yes. STK22N6F3 features 100% matte tin plating on all terminations, fully compliant with Directive 2002/95/EC (RoHS). The PolarPAK® package contains no lead, cadmium, mercury, hexavalent chromium, PBB, or PBDE, and supports standard lead-free reflow profiles up to 260 °C peak.

What is the maximum allowable junction temperature during continuous operation?

The absolute maximum operating junction temperature is 150 °C. Derating begins at T_C = 25 °C with a thermal resistance of 0.8 °C/W (top drain) and 2.2 °C/W (source), allowing sustained 22 A operation only when case temperature remains ≤100 °C per Table 2.

Does STK22N6F3 support gate drive from 3.3 V microcontrollers?

No. With V_GS(th) = 2–4 V and R_DS(on) specified at V_GS = 10 V, STK22N6F3 requires ≥8 V gate drive for full enhancement. At 3.3 V, R_DS(on) exceeds 0.05 Ω - resulting in >20 W conduction loss at 20 A - making it unsuitable for direct 3.3 V logic-level drive.

How is the S4 pin used in practical circuit design?

S4 is a dedicated Kelvin source sense terminal, electrically isolated from S1–S3 power returns. It connects directly to the gate driver's source reference or current-sense amplifier to eliminate voltage drop errors caused by PCB trace resistance, enabling precise current regulation within ±1% accuracy in closed-loop power stages.