STMicroelectronics STL100N1VH5

Overview

STL100N1VH5 from STMicroelectronics is an N-channel 12 V PowerFLAT™ (5x6) STripFET™ V MOSFET optimized for high-efficiency switching in low-voltage DC-DC converters and motor control stages, featuring R_DS(on) = 0.0022 Ω @ V_GS = 4.5 V, Q_g = 26.5 nC, I_D = 25 A (PCB-limited), and 300 mJ single-pulse avalanche energy - deployed in automotive body electronics and industrial power supplies.

For engineers reviewing the STL100N1VH5 datasheet, STL100N1VH5 pinout, STL100N1VH5 application, or STL100N1VH5 equivalent, key selection criteria include its ultra-low R_DS(on)/Q_g figure of merit, thermal resistance R_thj-pcb = 31.3 °C/W on FR-4, and gate threshold voltage V_GS(th) = 0.5 V - critical for 3.3 V/5 V logic-level drive compatibility and fast switching in synchronous rectification.

Technical Context

This MOSFET employs ST's STripFET™ V process to achieve industry-leading R_DS(on) × Q_g FOM, enabling high-frequency operation with minimal conduction and switching losses. Its 12 V V_DS rating and ±8 V V_GS support robust gate drive margin in 5 V systems.

The device integrates a low-V_SD source-drain diode (1.1 V @ 25 A, V_GS = 0) with t_rr = 49 ns and Q_rr = 54 nC at T_j = 150 °C, making it suitable for hard-switched and synchronous rectifier topologies where reverse recovery behavior directly impacts efficiency and EMI.

Key Specifications

Pinout & Package

STL100N1VH5 uses the PowerFLAT™ (5×6) surface-mount package with exposed drain pad for thermal and electrical connection. The package has 5 mm × 6 mm footprint, 1.0 mm nominal height, and 3-pin configuration: two drain terminals (D1, D2) and one source terminal (S). Gate (G) is located on the side opposite the drain pad.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 12 V power MOSFET applications.

Compared with BSC014N04LS and SiR872DP, STL100N1VH5 delivers superior R_DS(on)/Q_g balance at 12 V, lower thermal resistance on PCB, and tighter V_GS(th) distribution - making it optimal for space-constrained, high-efficiency 12 V switching where gate drive voltage is limited to 4.5 V.

Availability

STL100N1VH5 is available at Aetrix Electronics and suitable for automotive body electronics, industrial DC-DC converters, and brushless DC motor drivers requiring stable component supply, long-term lifecycle assurance, and consistent parametric performance across production batches.

Supply support for STL100N1VH5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, MCU, power, and sensor solutions for automotive, industrial, and consumer markets.

This device belongs to ST's STripFET™ V Power MOSFET product line, engineered specifically for ultra-low R_DS(on) and high-speed switching in 12 V and 24 V power conversion systems - targeting efficiency-critical applications like server VRMs and automotive electrification subsystems.

FAQ

What is the maximum continuous drain current for STL100N1VH5 under typical PCB mounting conditions?

The datasheet specifies I_D = 25 A (continuous) when mounted on an FR-4 board of 1 in² with 2 oz copper, rated per R_thj-pcb = 31.3 °C/W. This value assumes T_C = 25 °C and accounts for PCB thermal spreading - not case temperature. At T_C = 100 °C, derated current drops to 15.6 A.

Can STL100N1VH5 be driven directly by a 3.3 V microcontroller GPIO?

Yes. With V_GS(th) min = 0.5 V and R_DS(on) = 0.0032 Ω @ V_GS = 2.5 V, the device fully enhances at 3.3 V. However, gate charge Q_g = 26.5 nC requires adequate drive strength: a 10 mA GPIO can switch it in ~2.7 µs, but dedicated gate drivers are recommended for >100 kHz operation.

Does STL100N1VH5 have avalanche capability, and how is it rated?

Yes. It is rated for single-pulse unclamped inductive switching with I_AV = 12.5 A and E_AS = 300 mJ at V_DD = 12 V, starting from T_j = 25 °C. This rating is validated per JEDEC JESD24-1 and supports robust operation in motor control and relay driving without external snubbers.

What is the thermal resistance from junction to PCB, and how should it be used in layout design?

R_thj-pcb = 31.3 °C/W applies to a standard FR-4 board (1 in², 2 oz Cu, t < 10 sec). To meet thermal targets, designers must allocate ≥1 in² of 2 oz copper connected to the exposed drain pad via ≥6 thermal vias (0.3 mm diameter, 0.8 mm pitch). Reducing copper area increases R_thj-pcb linearly - e.g., 0.5 in² raises it to ~62.6 °C/W.