Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

STMicroelectronics STL100N8F7

Part No.:
STL100N8F7
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
8-PowerVDFN
Datasheet:
AetrixSTL100N8F7.pdf
Description:
MOSFET N-CH 80V 100A POWERFLAT
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,606

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

STL100N8F7 from STMicroelectronics is an N-channel 80 V, 5.2 mΩ typ. (6.1 mΩ max), 100 A Power MOSFET in PowerFLAT 5x6 package, utilizing STripFET F7 trench gate technology for ultra-low RDS(on), reduced gate charge (46.8 nC), and fast switching (tr = 95 ns). It serves as a high-current synchronous rectifier or main switch in DC-DC converters and motor drives.

For engineers reviewing the STL100N8F7 datasheet, STL100N8F7 pinout, STL100N8F7 application, or STL100N8F7 equivalent, key selection criteria include its 120 W TC power rating, 220 mJ single-pulse avalanche energy, low Crss/Ciss ratio (57/3435 pF) for EMI immunity, and thermal resistance of 1.25 °C/W (j-case).

Technical Context

This device implements an enhanced trench-gate STripFET F7 structure that simultaneously minimizes RDS(on) and internal capacitances-Ciss = 3435 pF, Coss = 653 pF, Crss = 57 pF-enabling high-efficiency hard-switching at up to 100 A continuous current with VGS = 10 V.

Its gate threshold voltage (2.5–4.5 V) ensures robust turn-on under industrial supply variations, while the source-drain diode exhibits VSD = 1.2 V at 20 A and trr = 48.6 ns, supporting synchronous rectification and inductive load commutation without external freewheeling diodes.

Key Specifications

ParameterValue and Actual Design Meaning
VDS80 V - supports 48 V bus systems with 25% derating margin for transients
RDS(on) max6.1 mΩ - enables ≤610 mW conduction loss at 10 A, critical for thermally constrained PCBs
ID (TC = 25 °C)100 A - rated per junction-to-case thermal path (Rthj-case = 1.25 °C/W)
EAS220 mJ - withstands unclamped inductive switching events up to 25 A, 40 V
Qg46.8 nC - determines gate driver power requirement and switching speed with 4.7 Ω resistor
tr / tf95 ns / 32 ns - enables >500 kHz PWM operation in buck converters with minimal overlap loss
Crss/Ciss57/3435 pF - low ratio improves noise immunity and reduces Miller-induced false turn-on

Pinout & Package

STL100N8F7 uses the PowerFLAT 5x6 (Type C) surface-mount package with exposed drain pad for thermal and electrical performance. The package has no leads; terminals are soldered directly to PCB copper areas.

Pin/TerminalCircuit RoleDesign Meaning
D (5, 6, 7, 8)DrainFour parallel drain terminals connected to large internal copper clip; must be soldered to ≥100 mm² thermal pad
G (4)GateSingle gate input terminal; requires low-inductance routing and RC snubber for EMI control
S (1, 2, 3)SourceThree-source terminals tied to source metallization; forms Kelvin sensing path for accurate current monitoring

Key Features

FeatureDesign Value
Ultra-low RDS(on)5.2 mΩ typ. at VGS = 10 V enables <1 W conduction loss at 14 A in 12 V automotive loads
Low Crss/Ciss ratio57/3435 pF = 0.0166 - suppresses dv/dt-induced gate oscillation during high-side switching
High avalanche ruggedness220 mJ single-pulse rating allows reliable operation in flyback and LLC resonant converters
Enhanced thermal performanceRthj-case = 1.25 °C/W - enables 100 A operation with only 125 °C junction rise above heatsink

Applications

Automotive DC-DC ConvertersIndustrial Motor Drives

Use Scenario: 12 V to 48 V bidirectional DC-DC converter in 48 V mild-hybrid vehicles.

IC Role / Device Role / Timing Role: Primary high-side synchronous rectifier switch operating at 200–300 kHz.

Use Value: 5.2 mΩ RDS(on) reduces conduction loss by 35% vs. legacy 8 mΩ MOSFETs, improving system efficiency from 92% to 94.5% at 5 kW.

Use Scenario: Half-bridge inverter driving 3-phase BLDC motors in HVAC compressors.

IC Role / Device Role / Timing Role: Low-side switching element handling 70 A peak phase current with 100 ns dead-time control.

Use Value: 46.8 nC Qg enables clean 100 ns turn-off with standard 2 A gate drivers, eliminating shoot-through risk.

Server PSU Primary SwitchEnergy Storage System (ESS) BMS

Use Scenario: Primary-side switch in 3.3 kW telecom rectifier using LLC topology.

IC Role / Device Role / Timing Role: High-frequency (600 kHz) hard-switched MOSFET in asymmetric half-bridge configuration.

Use Value: 220 mJ EAS sustains repeated 80 V/30 A inductive spikes during startup, eliminating need for external clamping.

Use Scenario: Solid-state contactor in 400 V battery disconnect unit with active short-circuit protection.

IC Role / Device Role / Timing Role: Main isolation switch activated within 50 µs of fault detection.

Use Value: 400 A pulsed drain current (IDM) supports 10× overcurrent tolerance for 100 µs, enabling safe battery short-circuit interruption.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
Infineon IPP040N08NRDS(on) = 4.0 mΩ max, Qg = 52 nC, same 80 V rating, TO-220FP packageRequires through-hole mounting and heatsink; higher gate drive power neededSelect when board space permits larger package and thermal mass is available
ON Semiconductor NTMFS5C428NT1GRDS(on) = 4.2 mΩ max, Qg = 42 nC, 80 V, PowerTDFN 5x6 packageLower gate charge but 15% lower ID rating (85 A); slightly higher Coss (720 pF)Select when faster switching dominates over peak current capability

Compared with IPP040N08N and NTMFS5C428NT1G, STL100N8F7 delivers optimal balance of 100 A current handling, 6.1 mΩ on-resistance, and 1.25 °C/W thermal resistance in a surface-mount footprint-making it preferred for high-power density, air-cooled industrial and automotive converters where PCB thermal management is prioritized over gate drive simplicity.

Availability

STL100N8F7 is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial motor drives, and server power supplies requiring stable component supply, long-term lifecycle support, and AEC-Q101-compliant alternatives.

Supply support for STL100N8F7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

STL100N8F7 belongs to the STripFET F7 power MOSFET product line, engineered specifically for high-efficiency, high-current switching in space-constrained power conversion systems such as 48 V automotive subsystems and compact AC-DC adapters.

FAQ

What is the maximum continuous drain current for STL100N8F7 at PCB temperature of 100 °C?

The maximum continuous drain current at Tpcb = 100 °C is 14 A, as rated per Rthj-pcb = 31.3 °C/W on a 1 in² FR-4 board with 2 oz copper. This reflects real-world PCB-limited thermal performance, distinct from case-mounted 71 A rating.

Does STL100N8F7 have integrated gate protection diodes?

No, STL100N8F7 does not integrate gate protection diodes. Its absolute maximum VGS is ±20 V; external Zener clamping (e.g., 15 V) is required in noisy environments to prevent gate oxide damage from transient overvoltage.

Can STL100N8F7 be used in synchronous rectification mode?

Yes-its source-drain diode has VSD = 1.2 V at 20 A and trr = 48.6 ns, enabling efficient synchronous rectification in buck and forward converters when driven with precise complementary gate timing to avoid cross-conduction.

Is the PowerFLAT 5x6 package lead-free and RoHS compliant?

Yes, STL100N8F7 is supplied in ECOPACK2-compliant PowerFLAT 5x6 package, meeting RoHS Directive 2011/65/EU and REACH SVHC requirements, with lead-free matte tin plating and halogen-free molding compound.

STL100N8F7 Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
STripFET™
Package/Case:
8-PowerVDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
80 V
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
6.1mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
46.8 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
3435 pF @ 40 V
FET Feature:
-
Power Dissipation (Max):
4.8W (Ta), 120W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PowerFlat™ (5x6)

STL100N8F7 FAQ

1.How can I place an order for STL100N8F7 through Aetrix?

Please submit a Request for Quotation (RFQ) for STL100N8F7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STL100N8F7 reliable?

The price and inventory of STL100N8F7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STL100N8F7 is usually 5 days.

3.What payment methods are accepted for STL100N8F7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STL100N8F7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STL100N8F7?

STL100N8F7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STL100N8F7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STL100N8F7?

For technical support, including STL100N8F7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STL100N8F7 requirements.

6.How does Aetrix verify that STL100N8F7 is sourced from the original manufacturer or authorized distributors?

All STL100N8F7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STL100N8F7 meets industry standards.

7.What is the process for return or replacement of STL100N8F7?

All STL100N8F7 units undergo pre-shipment inspection (PSI). If there is an issue with STL100N8F7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STL100N8F7 part is unused and in its original packaging.

Return procedure for STL100N8F7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

STL100N8F7 Tags

  • STL100N8F7
  • STL100N8F7 PDF
  • STL100N8F7 Datasheet
  • STL100N8F7 Specifications
  • STL100N8F7 Images
  • STMicroelectronics
  • STMicroelectronics STL100N8F7
  • Buy STL100N8F7
  • STL100N8F7 Price
  • STL100N8F7 Distributor
  • STL100N8F7 Supplier
  • STL100N8F7 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER