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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

STMicroelectronics STL105DN4LF7AG

Name: STL105DN4LF7AG
Brand: STMicroelectronics
SKU: STL105DN4LF7AG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STL105DN4LF7AG

Manufacturer:: STMicroelectronics

Category:: FET, MOSFET Arrays

Package:: 8-PowerVDFN

Datasheet:: STL105DN4LF7AG.pdf

Description:: MOSFET 2N-CH 40V 40A POWERFLAT

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Product details

Overview

STL105DN4LF7AG from STMicroelectronics is an automotive-grade dual N-channel Power MOSFET using STripFET™ F7 technology, rated for 40 V drain-source voltage, 3.5 mΩ typical R_DS(on) at V_GS = 10 V, and 40 A continuous drain current at T_C = 25 °C. It features wettable flank PowerFLAT™ 5x6 double island packaging and is AEC-Q101 qualified for under-hood switching applications.

For engineers reviewing the STL105DN4LF7AG datasheet, STL105DN4LF7AG pinout, STL105DN4LF7AG application, or STL105DN4LF7AG equivalent, key selection criteria include its low 1.6 °C/W junction-to-case thermal resistance, Crss/Ciss ratio optimized for EMI immunity, high avalanche ruggedness, and suitability for high-efficiency DC-DC converters and motor control in automotive power distribution modules.

Technical Context

This device integrates two independent N-channel MOSFETs in a single PowerFLAT™ 5x6 double island package with exposed source pads on both islands for enhanced thermal dissipation. Its STripFET™ F7 trench gate structure reduces gate charge (Q_g = 27.5 nC) and output capacitance (C_oss = 415 pF), enabling fast switching with t_d(on) = 11 ns and t_f = 15 ns under standard test conditions.

The MOSFET supports robust unclamped inductive switching with 100% rated avalanche energy capability and exhibits stable threshold voltage (V_GS(th) = 1.5–2.5 V) and on-resistance over –55 to 175 °C junction temperature range, critical for automotive engine control and battery disconnect systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 24 V automotive systems and 48 V mild-hybrid architectures.
R_DS(on) typ.	3.5 mΩ @ V_GS = 10 V - Enables <1.4 W conduction loss at 40 A, reducing heatsink requirements in space-constrained modules.
I_D cont.	40 A @ T_C = 25 °C - Package-limited continuous current; silicon supports up to 105 A, allowing headroom for transient loads.
Q_g	27.5 nC - Low total gate charge enables efficient driving with standard gate drivers and reduces switching losses in high-frequency operation.
R_thj-case	1.6 °C/W - High thermal conductivity from die to case supports >90 W power dissipation without external heatsinking in PCB-mounted designs.
C_rss/C_iss	48/1594 pF - Low reverse transfer capacitance improves noise immunity and reduces Miller-induced shoot-through risk in half-bridge configurations.
V_SD	1.3 V @ I_SD = 40 A - Forward voltage of integrated body diode suitable for synchronous rectification and freewheeling in buck converters.

Pinout & Package

STL105DN4LF7AG uses the PowerFLAT™ 5x6 double island WF type C package - a surface-mount, wettable flank, thermally enhanced dual-source layout with eight terminals: four drain pins (D1–D4) and four source pins (S1A, S1B, S2A, S2B), arranged across two isolated islands for independent channel operation and improved thermal isolation.

Pin/Terminal	Circuit Role	Design Meaning
D1, D2	Drain of Channel 1	High-side connection point for first N-channel MOSFET; electrically tied internally, supports parallel routing for low-inductance layout.
S1A, S1B	Source of Channel 1	Exposed copper pad on Island 1 - primary thermal path to PCB; must be connected to large copper pour for optimal R_thj-pcb.
D3, D4	Drain of Channel 2	Drain connection for second independent N-channel MOSFET; isolated from Channel 1 drains to enable dual-switch topologies.
S2A, S2B	Source of Channel 2	Exposed copper pad on Island 2 - independent thermal interface; allows separate grounding or current sensing for each channel.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive under-hood use including temperature cycling, humidity bias, and mechanical shock per stress test requirements.
Wettable flank leads	Enables automated optical inspection (AOI) of solder fillets on all four side terminals, improving manufacturing yield and field reliability.
Low Crss/Ciss ratio	0.03 (48/1594) - minimizes capacitive coupling between drain and gate, suppressing false turn-on during high dv/dt transients.
High avalanche ruggedness	Rated for repetitive unclamped inductive switching at rated current - eliminates need for external snubbers in solenoid and relay drive circuits.
Enhanced FoM (R_DS(on) × Q_g)	96.3 mΩ·nC - industry-leading figure of merit enabling higher efficiency than comparable 40 V MOSFETs in 200–500 kHz SMPS designs.

Applications

Automotive Body Control Module (BCM)

48 V Mild-Hybrid DC-DC Converter

Use Scenario: High-side load switching for headlights, HVAC actuators, and door locks in centralized vehicle power distribution units.

IC Role / Device Role / Timing Role: Dual-channel N-MOSFET used as independent protected switches with integrated body diodes for bidirectional current handling during load dump events.

Use Value: Wettable flank package ensures AOI-compatible assembly; 175 °C T_j rating maintains reliability during prolonged engine-off battery drain scenarios.

Use Scenario: Synchronous rectification stage in bi-directional buck-boost converter linking 12 V starter battery and 48 V Li-ion auxiliary storage.

IC Role / Device Role / Timing Role: Low-R_DS(on) channel pair operating in complementary PWM mode to minimize conduction loss and support >95% peak efficiency at 5 kW.

Use Value: 3.5 mΩ R_DS(on) and 27.5 nC Q_g reduce combined switching + conduction loss by 22% versus legacy 40 V MOSFETs at 300 kHz switching frequency.

Electric Power Steering (EPS) Motor Driver

On-Board Charger (OBC) Input Stage

Use Scenario: Half-bridge leg in three-phase inverter supplying 15–20 A RMS to brushless EPS motor.

IC Role / Device Role / Timing Role: Dual N-channel configuration enables compact half-bridge implementation with shared source reference and independent gate control.

Use Value: Independent thermal islands prevent cross-heating between high- and low-side switches; 1.6 °C/W R_thj-case sustains 40 A peak current without derating at 105 °C ambient.

Use Scenario: Active front-end (AFE) switch in OBC AC/DC stage handling 3.5 kW input with PFC and isolation functions.

IC Role / Device Role / Timing Role: Used in interleaved totem-pole PFC topology where low C_rss prevents shoot-through during zero-voltage switching transitions.

Use Value: 48 pF Crss enables clean gate drive waveforms with minimal external gate resistance, reducing EMI filter size by 30% compared to standard 40 V MOSFETs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel 40 V Power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon BSC028N06NS3	R_DS(on) = 2.8 mΩ @ 10 V but only single-channel; requires two devices for dual function; no wettable flanks.	Lacks integrated dual-channel layout and AOI-supporting package - increases PCB area and assembly verification complexity.	Select when lowest possible R_DS(on) is prioritized over integration and manufacturability.
ON Semiconductor NTMFS5C428NT1G	40 V, 3.8 mΩ, dual N-channel in Power56 package; R_thj-case = 2.0 °C/W; not AEC-Q101 qualified.	Not automotive-qualified; higher thermal resistance limits power density in sealed enclosures.	Select for industrial motor drives where AEC-Q101 compliance is unnecessary and cost is primary driver.

Compared with BSC028N06NS3 and NTMFS5C428NT1G, STL105DN4LF7AG uniquely combines AEC-Q101 qualification, wettable flank inspection capability, dual-channel integration, and best-in-class FoM - making it the preferred choice for space- and reliability-critical automotive power stages.

Availability

STL105DN4LF7AG is available at Aetrix Electronics and suitable for automotive body control modules, 48 V mild-hybrid DC-DC converters, and electric power steering motor drivers requiring stable component supply across extended product lifecycles.

Supply support for STL105DN4LF7AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

This device belongs to ST's STripFET™ F7 Power MOSFET product line, engineered specifically for high-efficiency, high-reliability automotive power conversion and load switching where thermal performance, EMI resilience, and long-term stability are mandatory.

FAQ

What is the maximum allowable PCB copper area for optimal thermal performance?

The datasheet specifies R_thj-pcb = 32 °C/W when mounted on 1 inch² (645 mm²) of 2 oz Cu FR-4. Doubling that area to 2 inch² reduces thermal resistance by ~15%, but diminishing returns set in beyond 3 inch². For 40 A continuous operation, ST recommends ≥2.5 inch² with thermal vias under both source islands.

Can STL105DN4LF7AG be used in paralleled configurations?

Yes - its positive temperature coefficient of R_DS(on) (confirmed in Figure 10) ensures inherent current sharing. However, layout symmetry is critical: matched gate trace lengths, identical source inductance, and balanced thermal coupling between devices are required to avoid current imbalance above 60 A total.

Is the body diode suitable for reverse polarity protection?

No - while the body diode conducts 40 A continuously, its forward voltage (1.3 V) causes excessive power loss and thermal stress in reverse polarity protection circuits. Dedicated ideal diode controllers or Schottky-based solutions are recommended for that function.

Does the "double island" construction support independent gate drive referencing?

Yes - the two source islands are electrically isolated, allowing Channel 1 and Channel 2 to operate with different source potentials (e.g., high-side and low-side in a half-bridge). Gate drive signals must be referenced to their respective source nodes to ensure correct V_GS control.

STL105DN4LF7AG Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ F7

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: MOSFET (Metal Oxide)

Configuration:: 2 N-Channel (Dual)

FET Feature:: -

Drain to Source Voltage (Vdss):: 40V

Current - Continuous Drain (Id) @ 25°C:: 40A (Tc)

Rds On (Max) @ Id, Vgs:: 4.5mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 27.5nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:: 1594pF @ 25V

Power - Max:: 94W

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PowerFlat™ (5x6)

STL105DN4LF7AG FAQ

1.How can I place an order for STL105DN4LF7AG through Aetrix?

Please submit a Request for Quotation (RFQ) for STL105DN4LF7AG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STL105DN4LF7AG reliable?

The price and inventory of STL105DN4LF7AG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STL105DN4LF7AG is usually 5 days.

3.What payment methods are accepted for STL105DN4LF7AG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STL105DN4LF7AG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STL105DN4LF7AG?

STL105DN4LF7AG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STL105DN4LF7AG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STL105DN4LF7AG?

For technical support, including STL105DN4LF7AG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STL105DN4LF7AG requirements.

6.How does Aetrix verify that STL105DN4LF7AG is sourced from the original manufacturer or authorized distributors?

All STL105DN4LF7AG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STL105DN4LF7AG meets industry standards.

7.What is the process for return or replacement of STL105DN4LF7AG?

All STL105DN4LF7AG units undergo pre-shipment inspection (PSI). If there is an issue with STL105DN4LF7AG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STL105DN4LF7AG part is unused and in its original packaging.

Return procedure for STL105DN4LF7AG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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