STMicroelectronics STL105N8F7AG

Overview

STL105N8F7AG from STMicroelectronics is an AEC-Q101 qualified N-channel Power MOSFET in PowerFLAT 5x6 package, delivering 80 V V_DS, 5.6 mΩ typ. R_DS(on) at V_GS = 10 V, and 95 A continuous drain current at T_C = 25 °C. It employs STripFET F7 trench technology for low conduction loss and fast switching in high-efficiency automotive power stages.

For engineers reviewing the STL105N8F7AG datasheet, STL105N8F7AG pinout, STL105N8F7AG application, or STL105N8F7AG equivalent, key selection criteria include its wettable flank PowerFLAT 5x6 package for automated optical inspection, low Cr_ss/C_iss ratio for EMI robustness, high avalanche energy (135 mJ), and junction temperature range up to 175 °C.

Technical Context

This MOSFET uses an enhanced trench gate structure that simultaneously reduces R_DS(on), C_iss (3475 pF typ.), and Q_g (46 nC typ.), enabling high-frequency synchronous rectification and DC-DC conversion. Its low Cr_ss/C_iss ratio (88/3475 ≈ 0.025) minimizes Miller-induced turn-on risk under noisy conditions.

The device features a source-drain diode with 37 ns reverse recovery time and 37 nC Q_rr at I_SD = 50 A, supporting hard-switched inductive loads. Thermal resistance R_thJC is 1.18 °C/W, enabling high-power density mounting on compact PCBs with direct case cooling.

Key Specifications

Pinout & Package

STL105N8F7AG is housed in a wettable flank PowerFLAT 5x6 WF type C package (JEDEC MO-263AB), optimized for automated optical solder-joint inspection and high thermal performance via exposed drain pad.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 80 V power MOSFET applications.

Compared with IPP040N8F5 and NTMFS5C673NL, STL105N8F7AG uniquely combines AEC-Q101 qualification, wettable flank inspection capability, and best-in-class FoM (R_DS(on) × Q_g) for thermally constrained automotive power modules.

Availability

STL105N8F7AG is available at Aetrix Electronics and suitable for automotive body control modules, 48 V mild hybrid converters, and electric power steering motor drivers requiring stable component supply across extended product lifecycles.

Supply support for STL105N8F7AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

This device belongs to ST's STripFET F7 automotive-qualified power MOSFET family, engineered specifically for high-current, high-reliability 48 V automotive subsystems demanding AEC-Q101 compliance and long-term supply stability.

FAQ

Is STL105N8F7AG suitable for high-frequency PWM motor control above 200 kHz?

Yes. With 19 ns turn-on delay, 13 ns fall time, and 46 nC total gate charge, it supports efficient operation up to 500 kHz in hard-switched topologies. Its low Cr_ss/C_iss ratio prevents spurious turn-on, and thermal resistance of 1.18 °C/W enables sustained high-frequency use with proper PCB copper area.

What is the maximum recommended gate resistor value for reliable switching?

For optimal EMI and switching loss trade-off, ST recommends R_G = 4.7 Ω (as used in datasheet timing tests). Values up to 10 Ω maintain safe dV/dt control while keeping t_off below 50 ns; values >15 Ω increase switching losses disproportionately due to prolonged Miller plateau duration.

Does the PowerFLAT 5x6 package require special PCB layout considerations?

Yes. The exposed drain pad must be connected to ≥4 cm² of 2 oz copper with ≥8 thermal vias (0.3 mm diameter, 0.8 mm pitch) to achieve the specified R_thJC = 1.18 °C/W. Footprint must match Figure 19 (DS13615 Rev 2, page 9), with solder mask defined for wettable flank inspection.

Can STL105N8F7AG replace older STripFET F4 or F6 devices in existing designs?

Yes, with minor validation. It offers lower R_DS(on) (−15 % vs F6), improved FoM, and identical PowerFLAT 5x6 footprint and pinout. Gate threshold remains compatible (2.5–4.5 V), but reduced Q_g may require slight gate driver tuning to maintain optimal dV/dt control.