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STMicroelectronics STL105NS3LLH7

Name: STL105NS3LLH7
Brand: STMicroelectronics
SKU: STL105NS3LLH7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STL105NS3LLH7

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: STL105NS3LLH7.pdf

Description:: MOSFET N-CH 30V 105A POWERFLAT

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STL105NS3LLH7 from STMicroelectronics is an N-channel 30 V Power MOSFET with integrated monolithic Schottky diode in PowerFLAT™ 5x6 package, featuring 0.0033 Ω typ. R_DS(on) at V_GS = 10 V, 27 A continuous drain current (T_pcb = 25 °C), and 13.7 nC total gate charge. It delivers high-efficiency switching in DC-DC converters and motor drive half-bridges.

For engineers reviewing the STL105NS3LLH7 datasheet, STL105NS3LLH7 pinout, STL105NS3LLH7 application, or STL105NS3LLH7 equivalent, key selection criteria include low R_DS(on) for conduction loss reduction, low Q_g for fast switching with minimal driver effort, avalanche ruggedness for unclamped inductive load reliability, and embedded Schottky for reduced reverse recovery losses in synchronous rectification.

Technical Context

This device integrates a trench-gate STripFET™ H7 MOSFET cell structure with a co-packaged monolithic Schottky barrier diode - not a discrete body diode - enabling independent optimization of forward voltage (V_SD = 0.4–0.7 V at I_SD = 2 A) and reverse recovery (t_rr = 35.2 ns, Q_rr = 26.4 nC). Its thermal design targets PCB-mounted operation with R_thj-pcb = 31.3 °C/W on 1 in² 2 oz Cu FR-4.

The PowerFLAT™ 5x6 type F package uses exposed drain pads (pins 5–8) for low-inductance, high-current source/drain routing and features a thermally enhanced copper-exposed bottom side. Gate (pin 4) and source (pins 1–3) terminals are arranged to minimize loop inductance in high-frequency hard-switching topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V industrial bus and 12 V automotive systems
R_DS(on) typ.	0.0033 Ω @ V_GS = 10 V - Enables <1 W conduction loss at 17 A, critical for high-current synchronous buck stages
Q_g	13.7 nC - Low gate charge reduces driver power and enables >1 MHz switching with standard gate drivers
I_D (T_pcb = 25 °C)	27 A - Continuous current rating defined under realistic PCB thermal conditions, not case-only
t_rr	35.2 ns - Fast reverse recovery minimizes shoot-through risk and EMI in synchronous rectifiers
V_SD	0.4–0.7 V @ I_SD = 2 A - Low forward drop of integrated Schottky reduces freewheeling loss vs. silicon body diodes
R_thj-pcb	31.3 °C/W - Thermal resistance measured on standard FR-4 board, enabling accurate junction temp estimation

Pinout & Package

STL105NS3LLH7 is housed in a surface-mount PowerFLAT™ 5x6 type F package (5.0 × 6.0 mm footprint, 0.95 mm height) with exposed drain thermal pad on the bottom side. The package supports high-current routing and efficient PCB heat dissipation via soldered copper area.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source	Low-inductance parallel source connection; tied directly to PCB ground plane for minimal switching loop area
4	Gate	Single-point gate input; requires controlled impedance routing to suppress ringing during fast dV/dt transitions
5, 6, 7, 8	Drain	Exposed copper drain pad - electrically and thermally connected to internal die drain; must be fully soldered to large copper pour

Key Features

Feature	Design Value
Very low R_DS(on)	0.0033 Ω typ. at 10 V drive enables <0.95 W conduction loss at 17 A, reducing heatsink requirements
Very low Q_g	13.7 nC total gate charge allows clean 100 ns-level switching edges with 1 Ω gate resistor and 5 V logic drivers
Avalanche ruggedness	Rated for unclamped inductive switching (UIS) up to 420 A pulsed - supports robust motor control fault handling
Embedded Schottky diode	Monolithic integration eliminates bond wire inductance and ensures consistent t_rr and Q_rr across temperature and production lot
PowerFLAT™ 5x6 package	Thermally optimized layout with 4-pin drain and 3-pin source enables >60 A peak current capability with <1.5 mΩ PCB trace resistance

Applications

DC-DC Synchronous Buck Converter

Brushless DC Motor Half-Bridge

Use Scenario: High-efficiency 12 V input to 3.3/5/12 V output conversion in telecom power supplies and FPGA core rails.

IC Role / Device Role / Timing Role: High-side or low-side switch in synchronous rectification topology; operates at 300 kHz–1 MHz with hard switching.

Use Value: 0.0033 Ω R_DS(on) cuts conduction loss by >40% vs. comparable 5 mΩ MOSFETs; integrated Schottky eliminates external diode and reduces BOM count.

Use Scenario: 24 V BLDC motor drive stage delivering up to 20 A phase current in e-bike controllers and power tools.

IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter leg; handles PWM commutation with 10–20 kHz carrier frequency.

Use Value: 35.2 ns t_rr and 26.4 nC Q_rr reduce switching loss and voltage overshoot during freewheeling, improving system efficiency and EMC performance.

Automotive Body Control Module

Industrial Solenoid Driver

Use Scenario: Load switching for headlights, HVAC actuators, and window lift motors in 12 V vehicle architectures.

IC Role / Device Role / Timing Role: Single-channel high-current load switch with integrated protection; driven by microcontroller GPIO.

Use Value: Avalanche-rated 420 A pulsed current withstands inductive kickback from 100 mH solenoids without external snubbers or TVS.

Use Scenario: 24 V industrial PLC output stage driving 10–30 W solenoid valves and contactor coils.

IC Role / Device Role / Timing Role: Low-side power switch with fast turn-off for precise pulse-width-controlled actuation timing.

Use Value: 12.5 ns fall time and 31.8 ns turn-off delay enable sub-10 μs current cutoff, supporting high-resolution duty cycle control and rapid valve response.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel Power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PBF	R_DS(on) = 0.0037 Ω @ 10 V; no integrated Schottky; TO-252 package	Lacks monolithic Schottky - requires external diode for synchronous rectification; higher thermal resistance (R_thj-amb ≈ 62 °C/W)	Select when cost sensitivity outweighs Schottky integration need and PCB space permits discrete diode placement.
DMTH3007LPSQ-13	R_DS(on) = 0.0035 Ω @ 10 V; integrated Schottky; PowerDI™ 5060 package (5.0 × 6.0 mm)	Similar footprint but different pinout (drain/source orientation); slightly higher Q_g (15.5 nC)	Choose for AEC-Q101-compliant automotive designs where qualification status is mandatory over ST's industrial-grade part.

Compared with IRF7470PBF and DMTH3007LPSQ-13, STL105NS3LLH7 offers the lowest Q_g/R_DS(on) ratio (4.15 nC/mΩ) and guaranteed monolithic Schottky integration - critical for minimizing layout complexity and ensuring repeatable reverse recovery behavior in high-density power modules.

Availability

STL105NS3LLH7 is available at Aetrix Electronics and suitable for DC-DC converters, BLDC motor drives, automotive body control modules, and industrial solenoid drivers requiring stable component supply and long-term production continuity.

Supply support for STL105NS3LLH7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs, discrete components, and MEMS sensors for industrial, automotive, and consumer markets.

This device belongs to ST's STripFET™ H7 Power MOSFET family, engineered specifically for high-efficiency, high-current switching in compact power supplies and motor control systems where low R_DS(on), fast switching, and robustness under transient stress are essential.

FAQ

What is the maximum continuous drain current for STL105NS3LLH7 under PCB-mounted conditions?

The maximum continuous drain current is 27 A at T_pcb = 25 °C and 16 A at T_pcb = 100 °C, based on thermal resistance R_thj-pcb = 31.3 °C/W measured on a 1 in², 2 oz Cu FR-4 board. This rating reflects real-world PCB thermal performance, not idealized case temperature assumptions.

Does STL105NS3LLH7 have a built-in Schottky diode, and how does it differ from the body diode?

Yes - it integrates a monolithic Schottky barrier diode, not the intrinsic MOSFET body diode. This Schottky provides lower forward voltage (0.4–0.7 V), faster reverse recovery (35.2 ns), and zero minority-carrier storage - eliminating tail current and enabling reliable synchronous rectification without external diodes.

Can STL105NS3LLH7 be used in avalanche mode, and what is its UIS rating?

Yes - it is rated for unclamped inductive switching (UIS) with a pulsed drain current of 420 A at T_j = 150 °C. This ruggedness is validated per JEDEC JESD24-1 and supports reliable operation in motor drive and solenoid applications where inductive energy must be safely absorbed without external clamping.

What is the recommended PCB footprint and thermal pad layout for PowerFLAT™ 5x6 type F?

The recommended footprint matches Figure 17 in the datasheet: 4.90 mm × 5.75 mm thermal pad with 0.4 mm solder mask opening, surrounded by 0.3 mm wide traces for pins 1–4. At least 80% solder coverage on the exposed drain pad is required to achieve the specified R_thj-pcb = 31.3 °C/W.

STL105NS3LLH7 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: DeepGATE™, STripFET™ VII

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 105A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.9mOhm @ 13.5A, 10V

Vgs(th) (Max) @ Id:: 1.2V @ 1mA (Min)

Gate Charge (Qg) (Max) @ Vgs:: 13.7 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2110 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 62.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerFlat™ (5x6)

STL105NS3LLH7 FAQ

1.How can I place an order for STL105NS3LLH7 through Aetrix?

Please submit a Request for Quotation (RFQ) for STL105NS3LLH7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STL105NS3LLH7 reliable?

The price and inventory of STL105NS3LLH7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STL105NS3LLH7 is usually 5 days.

3.What payment methods are accepted for STL105NS3LLH7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STL105NS3LLH7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STL105NS3LLH7?

STL105NS3LLH7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STL105NS3LLH7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STL105NS3LLH7?

For technical support, including STL105NS3LLH7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STL105NS3LLH7 requirements.

6.How does Aetrix verify that STL105NS3LLH7 is sourced from the original manufacturer or authorized distributors?

All STL105NS3LLH7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STL105NS3LLH7 meets industry standards.

7.What is the process for return or replacement of STL105NS3LLH7?

All STL105NS3LLH7 units undergo pre-shipment inspection (PSI). If there is an issue with STL105NS3LLH7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STL105NS3LLH7 part is unused and in its original packaging.

Return procedure for STL105NS3LLH7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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