STMicroelectronics STL10LN80K5

Overview

STL10LN80K5 from STMicroelectronics is an N-channel 800 V, 0.59 Ω typ. (0.66 Ω max), 6 A Power MOSFET using MDmesh™ K5 vertical silicon technology in a PowerFLAT™ 5x6 VHV package. It delivers ultra-low gate charge (15 nC), 100% avalanche-tested ruggedness (240 mJ EAS), and Zener-protected gate-source terminals for high-voltage switching in offline SMPS and industrial inverters.

For engineers reviewing the STL10LN80K5 datasheet, STL10LN80K5 pinout, STL10LN80K5 application, or STL10LN80K5 equivalent, key selection criteria include its 800 V V(BR)DSS rating, 3 °C/W Rthj-case thermal resistance, 427 pF Ciss, 350 ns trr at 150 °C, and PowerFLAT™ 5x6 VHV surface-mount footprint compatibility with high-power density board layouts.

Technical Context

This device implements ST's MDmesh™ K5 proprietary vertical superjunction architecture to minimize conduction and switching losses simultaneously. Its optimized cell layout achieves industry-leading RDS(on) × area and FoM while maintaining robust dv/dt ruggedness (50 V/ns) and unclamped inductive switching capability.

The integrated back-to-back gate-source Zener diodes (30 V V(BR)GSO) provide intrinsic ESD protection without external components, and the source-drain diode supports synchronous rectification with 1.5 V VSD at 6 A and controlled reverse recovery (Qrr = 3.9 µC, trr = 350 ns at Tj = 25 °C).

Key Specifications

Pinout & Package

STL10LN80K5 is housed in a thermally enhanced PowerFLAT™ 5x6 VHV package: 5.2 mm × 6.15 mm body, 1.0 mm height, exposed drain pad on bottom side for direct thermal coupling to PCB copper. The package is RoHS-compliant and ECOPACK® certified.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPW60R099CPFKSA1 and IXTH12N80L2, STL10LN80K5 uniquely combines 800 V capability, sub-0.6 Ω on-resistance, and integrated gate Zener in a compact surface-mount package-making it optimal for space-constrained, high-efficiency, high-reliability offline power conversion where board-level surge immunity and thermal density are critical.

Availability

STL10LN80K5 is available at Aetrix Electronics and suitable for offline AC-DC adapters, industrial motor drives, server PSU front-end stages, and LED streetlight drivers requiring stable component supply across multi-year production cycles.

Supply support for STL10LN80K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

This device belongs to ST's MDmesh™ K5 high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-power-density offline switching applications where low RDS(on), low Qg, and avalanche ruggedness are mandatory.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STL10LN80K5 supports 3.8 A continuous drain current at TC = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limits imposed by its 3 °C/W junction-to-case resistance and safe operating area constraints under sustained conduction.

Does this MOSFET require external gate protection?

No. The device integrates back-to-back gate-source Zener diodes with 30 V breakdown voltage (V(BR)GSO), providing inherent ESD and overvoltage protection. External TVS devices are unnecessary unless system-level surge requirements exceed IEC 61000-4-5 Level 4.

Can STL10LN80K5 be used in zero-voltage switching (ZVS) topologies?

Yes. Its low Crss (0.25 pF) and optimized output capacitance profile (Coss = 43 pF, Co(er) = 27 pF) support reliable ZVS operation in LLC resonant converters up to 500 kHz, provided gate drive timing and resonant tank design account for its 28 ns td(off) and 13 ns tf.

What is the recommended PCB footprint for thermal performance?

Per Figure 22 in the datasheet, the recommended footprint uses a 4.4 mm × 2.5 mm solder mask opening over a 4.3 mm × 2.4 mm copper pad for the exposed drain terminal, with ≥ 10 cm² of 2 oz copper connected via multiple thermal vias to internal ground planes to achieve the rated 3 °C/W Rthj-case.