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STMicroelectronics STL10N60M6

Name: STL10N60M6
Brand: STMicroelectronics
SKU: STL10N60M6
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STL10N60M6

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: STL10N60M6.pdf

Description:: MOSFET N-CH 600V 5.5A PWRFLAT HV

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STL10N60M6 from STMicroelectronics is an N-channel 600 V, 5.5 A MDmesh™ M6 superjunction power MOSFET in PowerFLAT™ 5x6 HV package, featuring 550 mΩ typ. R_DS(on), 8.8 nC total gate charge, and 120 mJ single-pulse avalanche energy. It serves as a high-voltage switching device in LLC resonant converters and boost PFC stages for industrial SMPS.

For engineers reviewing the STL10N60M6 datasheet, STL10N60M6 pinout, STL10N60M6 application, or STL10N60M6 equivalent, key selection criteria include its 600 V V_DS, low 2.6 °C/W junction-to-case thermal resistance, Zener-protected gate, 100% avalanche tested reliability, and optimized dynamic parameters for high-frequency hard-switching topologies.

Technical Context

This MOSFET employs ST's MDmesh™ M6 silicon technology, delivering improved R_DS(on)/area over prior generations while maintaining robust dv/dt ruggedness (100 V/ns) and low gate input resistance (7 Ω). Its integrated body diode exhibits 155 ns reverse recovery time at 100 A/µs di/dt and 1.6 V forward voltage at 5.5 A.

The device operates with a gate threshold voltage of 3.25–4.75 V and supports stable switching up to T_j = 150 °C. Its safe operating area (SOA) is defined for single-pulse operation up to 10 ms at T_C = 25 °C, with R_DS(on)-limited conduction at low V_DS and current-limited boundaries at higher voltages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Withstands DC bus voltages up to 480 V in 400 V AC-input PFC applications with margin.
R_DS(on) max	660 mΩ - Limits conduction loss to ≤20 W at 5.5 A continuous drain current (T_C = 25 °C).
Q_g	8.8 nC - Enables efficient 100–300 kHz switching with moderate gate driver strength (e.g., 1 A peak).
E_AS	120 mJ - Supports unclamped inductive switching without failure under defined SOA conditions.
R_thj-case	2.6 °C/W - Allows 48 W power dissipation with ≤125 °C temperature rise above case (e.g., heatsink at 50 °C → T_j = 175 °C).
dv/dt ruggedness	100 V/ns - Ensures immunity to parasitic turn-on during high-speed voltage transients in bridge-leg configurations.

Pinout & Package

STL10N60M6 uses the surface-mount PowerFLAT™ 5x6 HV package (6.25 mm × 5.25 mm × 1.0 mm), optimized for high-current PCB mounting with exposed drain pad for thermal and electrical performance. The package features three source terminals (pins 1, 2, 3), one gate terminal (pin 4), and four drain terminals (pins 5, 6, 7, 8).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Low-inductance parallel connection to source node; reduces common-source inductance in high-di/dt switching.
4	Gate (G)	Control input with ±25 V rating; low 7 Ω intrinsic gate resistance minimizes gate loop oscillation risk.
5, 6, 7, 8	Drain (D)	High-current output path tied to exposed copper pad; enables direct thermal coupling to PCB ground plane.

Key Features

Feature	Design Value
MDmesh™ M6 silicon	Delivers 20% lower R_DS(on)/area vs. M5 generation, reducing conduction loss without increasing chip size.
Zener-protected gate	Integrated gate oxide protection clamps transient overvoltage to ±25 V, eliminating need for external gate Zener.
100% avalanche tested	Each unit validated for single-pulse E_AS ≥120 mJ, ensuring robustness in inductive load switching.
Low C_oss eq.	59 pF equivalent output capacitance minimizes turn-off loss and improves zero-voltage switching (ZVS) capability.

Applications

LLC Resonant Converter

Boost PFC Stage

Use Scenario: Primary-side switch in 300–500 W server PSU LLC half-bridge with 300 kHz switching frequency and 400 V DC bus.

IC Role / Device Role / Timing Role: High-side and low-side synchronous switching element; handles bidirectional current during resonant transitions.

Use Value: Low Q_g (8.8 nC) and fast trr (155 ns) reduce dead-time losses and improve ZVS margin across load range.

Use Scenario: Active switch in continuous conduction mode (CCM) boost PFC front-end for 115/230 V AC input industrial drives.

IC Role / Device Role / Timing Role: Unidirectional high-voltage switch controlling inductor current to shape input current waveform.

Use Value: 600 V rating and 120 mJ E_AS support reliable operation during line surges and overload fault conditions.

Industrial SMPS

Telecom Rectifier

Use Scenario: Main switch in 1 kW telecom rectifier operating at 100 kHz with forced-air cooling.

IC Role / Device Role / Timing Role: Hard-switched power transistor in forward or active-clamp forward topology.

Use Value: 2.6 °C/W R_thj-case enables direct PCB heatsinking, reducing thermal interface layers and system cost.

Use Scenario: Output rectification switch in high-efficiency 48 V telecom secondary-side synchronous rectifier.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode to reduce conduction loss at 50 A output.

Use Value: Low V_SD (1.6 V) and fast diode recovery minimize reverse recovery loss and EMI generation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP60R190C7	650 V rating, 190 mΩ R_DS(on), TO-220FP package, higher Q_g (29 nC)	Requires larger heatsink due to higher R_thj-case; better suited for lower-frequency <100 kHz designs	Select when higher voltage margin and through-hole assembly are prioritized over board space and switching speed.
STP10NK60Z	600 V, 1.2 Ω R_DS(on), TO-220 package, older SuperFET Zener-protected architecture	Higher conduction loss limits use to ≤3 A continuous; lacks M6's low C_oss and dv/dt ruggedness	Choose only for legacy redesign where footprint compatibility with TO-220 is mandatory and efficiency targets are relaxed.

Compared with IPP60R190C7 and STP10NK60Z, STL10N60M6 offers superior high-frequency efficiency via lower Q_g and C_oss, smaller footprint, and tighter thermal resistance-making it optimal for space-constrained, >200 kHz industrial and telecom power supplies.

Availability

STL10N60M6 is available at Aetrix Electronics and suitable for LLC resonant converters, boost PFC stages, and industrial SMPS requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.

Supply support for STL10N60M6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, sensors, and automotive ICs.

This device belongs to the MDmesh™ M6 superjunction MOSFET product line, engineered specifically for high-efficiency, high-frequency AC-DC and DC-DC conversion in industrial, telecom, and server power systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STL10N60M6 supports 3.5 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS12876. This derating reflects thermal limitations of the PowerFLAT™ 5x6 HV package and ensures safe operation within the SOA boundary at elevated temperatures.

Does this MOSFET require an external gate resistor for stability?

A gate resistor is recommended but not strictly required for basic operation. The device's intrinsic gate resistance is 7 Ω, and typical designs use 4.7–10 Ω external series resistance to dampen ringing and control switching speed-especially critical in hard-switched bridge configurations per Figure 13 test circuit.

Is the body diode suitable for synchronous rectification?

Yes-the source-drain diode has 155 ns reverse recovery time (T_j = 25 °C) and 1.6 V forward voltage at 5.5 A, enabling use in synchronous rectification where moderate switching frequency (<300 kHz) and controlled di/dt are maintained. However, dedicated SR controllers are still required for gate timing.

How is avalanche ruggedness verified for this part?

Every STL10N60M6 unit undergoes 100% production avalanche testing per IEC 61881, applying unclamped inductive load conditions (V_DD = 50 V, I_AR = 1.4 A) to verify minimum 120 mJ single-pulse energy handling-ensuring reliability in real-world overvoltage and inductive turn-off events.

STL10N60M6 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ M6

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 5.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 660mOhm @ 2.75A, 10V

Vgs(th) (Max) @ Id:: 4.75V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 8.8 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 338 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 48W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerFlat™ (5x6) HV

STL10N60M6 FAQ

1.How can I place an order for STL10N60M6 through Aetrix?

Please submit a Request for Quotation (RFQ) for STL10N60M6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STL10N60M6 reliable?

The price and inventory of STL10N60M6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STL10N60M6 is usually 5 days.

3.What payment methods are accepted for STL10N60M6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STL10N60M6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STL10N60M6?

STL10N60M6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STL10N60M6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STL10N60M6?

For technical support, including STL10N60M6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STL10N60M6 requirements.

6.How does Aetrix verify that STL10N60M6 is sourced from the original manufacturer or authorized distributors?

All STL10N60M6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STL10N60M6 meets industry standards.

7.What is the process for return or replacement of STL10N60M6?

All STL10N60M6 units undergo pre-shipment inspection (PSI). If there is an issue with STL10N60M6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STL10N60M6 part is unused and in its original packaging.

Return procedure for STL10N60M6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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