STMicroelectronics STL110N4F7AG

Overview

STL110N4F7AG from STMicroelectronics is an automotive-grade N-channel Power MOSFET with 40 V V_DS, 3.3 mΩ typ. R_DS(on) at V_GS = 10 V and 54 A, 108 A continuous drain current at T_C = 25 °C, housed in a PowerFLAT™ 5x6 package. It delivers high-efficiency switching in motor control, DC-DC converters, and battery protection circuits.

For engineers reviewing the STL110N4F7AG datasheet, STL110N4F7AG pinout, STL110N4F7AG application, or STL110N4F7AG equivalent, key selection criteria include its AEC-Q101 qualification, low Cr_ss/C_iss ratio for EMI immunity, 1.6 °C/W R_thj-case, and 130 mJ single-pulse avalanche energy - all critical for automotive powertrain and body electronics design.

Technical Context

This MOSFET employs STripFET™ F7 trench-gate technology to achieve ultra-low on-resistance while minimizing gate charge (Q_g = 15 nC) and reverse transfer capacitance (C_rss = 34 pF). Its optimized capacitance profile supports fast switching (t_d(on) = 18 ns, t_f = 16 ns) with reduced EMI generation in high-frequency power stages.

The device features high avalanche ruggedness (E_AS = 130 mJ), thermal resistance of 1.6 °C/W junction-to-case, and operation up to 175 °C junction temperature - enabling robust performance in under-hood automotive environments where thermal stress and transient overloads are common.

Key Specifications

Pinout & Package

STL110N4F7AG uses the PowerFLAT™ 5x6 WF type C surface-mount package (6.0 × 5.2 mm footprint, 1.0 mm height), featuring exposed drain pad for thermal and electrical connection. The package is RoHS-compliant and ECOPACK® certified.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Compared with STL110N4F7AG, BSC014N04LS6 offers superior conduction loss but demands higher gate drive strength, while NTMFS4C023N trades some R_DS(on) for lower Q_g and smaller footprint - making STL110N4F7AG optimal for balanced thermal, switching, and ruggedness requirements in automotive power modules.

Availability

STL110N4F7AG is available at Aetrix Electronics and suitable for motor control, DC-DC conversion, and battery protection applications requiring stable component supply, AEC-Q101 compliance, and high-current capability in compact automotive modules.

Supply support for STL110N4F7AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

The STripFET™ F7 product line targets high-efficiency power switching in automotive and industrial applications, emphasizing low R_DS(on), fast switching, and ruggedness under harsh thermal and electrical stress.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STL110N4F7AG supports 69 A continuous drain current at T_C = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limitations of the PowerFLAT™ 5x6 package and silicon capability, not gate drive or voltage constraints. Designers must ensure adequate PCB copper area or heatsinking to maintain case temperature within this limit during sustained operation.

Is the device suitable for synchronous rectification in 40 V automotive buck converters?

Yes - with R_DS(on) = 3.3 mΩ typ., Q_g = 15 nC, and t_f = 16 ns, the STL110N4F7AG delivers low conduction loss and fast switching required for high-efficiency synchronous rectification at 200–500 kHz. Its low C_rss/C_iss ratio also enhances noise immunity in noisy converter environments.

Does the device include integrated ESD or overtemperature protection?

No - the STL110N4F7AG is a discrete power MOSFET without integrated protection circuitry. External gate resistors, TVS diodes, and thermal monitoring must be implemented per system-level safety requirements. Its AEC-Q101 qualification confirms robustness against automotive stress tests, but functional protection remains the responsibility of the board-level design.

What is the recommended PCB footprint for thermal performance?

The datasheet specifies a PowerFLAT™ 5x6 recommended footprint (Figure 20) with a 4.2 × 4.2 mm thermal pad and 0.4 mm solder mask opening. For optimal thermal performance, use ≥2 oz copper, connect the exposed drain pad to a minimum 1 inch² internal or external ground plane, and apply 9–12 vias (0.3 mm diameter) beneath the pad to inner layers.