STMicroelectronics STL11N6F7

Overview

STL11N6F7 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in PowerFLAT™ 3.3×3.3 package, rated for 60 V V_DS, 12 mΩ max R_DS(on) at V_GS = 10 V, and 11 A continuous drain current at T_pcb = 25 °C. It delivers low conduction loss and fast switching in compact DC-DC converters and motor control stages.

For engineers reviewing the STL11N6F7 datasheet, STL11N6F7 pinout, STL11N6F7 application, or STL11N6F7 equivalent, key selection criteria include its 10 mΩ typ. on-resistance, 17 nC total gate charge, 53 pF Crss/Ciss ratio for EMI immunity, and thermal resistance of 42.8 °C/W (junction-to-PCB), critical for thermally constrained board-level designs.

Technical Context

This device employs STripFET™ F7 trench-gate technology to minimize R_DS(on) while reducing internal capacitances-C_iss = 1035 pF, C_oss = 450 pF, Crss = 53 pF-and gate charge (Q_g = 17 nC, Q_gd = 5.7 nC). Its low Crss/Ciss ratio improves noise immunity during high-dV/dt switching.

The MOSFET supports unclamped inductive switching with guaranteed avalanche ruggedness and operates across –55 °C to 150 °C junction temperature. Its 1.2 V source-drain diode forward voltage at 11 A enables efficient synchronous rectification without external Schottky diodes.

Key Specifications

Pinout & Package

STL11N6F7 uses the PowerFLAT™ 3.3×3.3 surface-mount package with exposed drain pad for thermal and electrical performance. The 8-pin configuration features a 4-pad drain (pins 5–8), single gate (pin 4), and 3-pad source (pins 1–3).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.

Compared with BSC014N06NS and NTMFS4C09NT1G, STL11N6F7 offers the best balance of low gate charge (17 nC), ultra-low Crss/Ciss (5.1 %), and proven avalanche ruggedness-making it optimal for space-constrained, high-frequency, and inductive-load applications where reliability and EMI robustness are prioritized over absolute R_DS(on) minimum.

Availability

STL11N6F7 is available at Aetrix Electronics and suitable for DC-DC converters, BLDC motor drives, automotive LED drivers, and industrial solenoid controllers requiring stable component supply and long-term production continuity.

Supply support for STL11N6F7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

The STL11N6F7 belongs to ST's STripFET™ F7 Power MOSFET product line, engineered specifically for high-efficiency, high-density power conversion in thermally constrained applications such as server VRMs and compact motor drives.

FAQ

What is the maximum continuous drain current at PCB temperature of 100 °C?

The STL11N6F7 supports 7 A continuous drain current when mounted on a standard FR-4 PCB at 100 °C ambient, based on its R_thj-pcb = 42.8 °C/W rating and 2.9 W total dissipation limit at T_pcb = 25 °C. Derating follows linear interpolation between 11 A at 25 °C and 7 A at 100 °C.

Can STL11N6F7 replace a TO-220 MOSFET in existing layouts?

No-it uses a surface-mount PowerFLAT™ 3.3×3.3 package with bottom-side thermal pad, not through-hole TO-220. Layout redesign is required: footprint must match Figure 20 (8465286_footprint), including thermal via pattern under the drain pad and 1 in² copper pour for thermal compliance.

Is the body diode suitable for synchronous rectification?

Yes-the source-drain diode has V_SD = 1.2 V at 11 A and t_rr = 26.8 ns, enabling usable synchronous rectification in buck converters up to 200 kHz. However, its forward voltage is higher than Schottky diodes, so efficiency gain depends on duty cycle and load current.

Does STL11N6F7 require gate resistors for stability?

Yes-a 4.7 Ω to 10 Ω series gate resistor is recommended to damp oscillation caused by Q_gd = 5.7 nC interacting with PCB trace inductance. Without it, ringing exceeding ±20 V can occur at V_GS, risking spurious turn-on or gate oxide stress during fast switching.