STMicroelectronics STL120N2VH5

Overview

STL120N2VH5 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET using STripFET™ V technology in a PowerFLAT™ 5x6 package, rated for 20 V V_DS, 0.002 Ω R_DS(on) at V_GS = 4.5 V, and 28 A continuous drain current on FR-4 PCB. It features 2.5 V gate drive compatibility, low thermal resistance (R_thj-pcb = 31.25 °C/W), and optimized conduction/switching loss balance for high-efficiency DC-DC power stages in portable electronics.

For engineers reviewing the STL120N2VH5 datasheet, STL120N2VH5 pinout, STL120N2VH5 application, or STL120N2VH5 equivalent, key selection criteria include its ultra-low R_DS(on) at logic-level gate drive, avalanche ruggedness (E_AS = 300 mJ), thermal performance on standard PCBs, and suitability for synchronous rectification in buck converters and battery protection circuits.

Technical Context

This device implements a trench-gate STripFET™ V silicon process with optimized cell pitch and reduced specific on-resistance. Its 2.5 V threshold enables direct interfacing with 3.3 V microcontrollers without level-shifting, while the exposed-drain PowerFLAT™ 5x6 package provides low-inductance source connection and efficient heat transfer to the PCB copper plane.

The MOSFET exhibits fast switching dynamics (t_d(on) = 21 ns, t_f = 55 ns) and low gate charge (Q_g = 29 nC at V_GS = 2.5 V), supporting high-frequency operation up to 1 MHz in point-of-load regulators. Its body diode shows low reverse recovery charge (Q_rr = 30 nC) and fast trr (34 ns), reducing shoot-through losses in synchronous topologies.

Key Specifications

Pinout & Package

STL120N2VH5 uses the PowerFLAT™ 5x6 (Type C-B) surface-mount package with an exposed drain pad on the bottom side for thermal and electrical connection. The package has 5 mm × 6 mm footprint, 0.83 mm typical height, and 8-pin configuration (3 source pins, 1 gate, 4 drain terminals including thermal pad).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level Power MOSFET applications.

Compared with BSC010N04LS and SiR872DP, STL120N2VH5 offers the lowest package height and best R_DS(on)/Q_g trade-off specifically for 20 V logic-level applications where PCB area and thermal dissipation on standard FR-4 are critical.

Availability

STL120N2VH5 is available at Aetrix Electronics and suitable for power bank protection circuits, USB-C PD sink switches, and smartphone battery charger ICs requiring stable component supply, consistent parametric performance, and long-term lifecycle support.

Supply support for STL120N2VH5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MEMS, power, and microcontroller solutions for automotive, industrial, and consumer markets.

This device belongs to ST's STripFET™ V Power MOSFET product line, engineered for ultra-low R_DS(on) and high switching efficiency in space-constrained, thermally demanding power conversion applications.

FAQ

What is the maximum continuous drain current for STL120N2VH5 on a standard PCB?

The datasheet specifies I_D = 28 A continuous at T_pcb = 25 °C when mounted on a 1 in², 2 oz copper FR-4 board. This rating assumes proper thermal via placement under the exposed drain pad and ambient airflow per JEDEC JESD51-7. Derating applies above 25 °C PCB temperature at 0.03 W/°C.

Can STL120N2VH5 be driven directly by a 3.3 V microcontroller GPIO?

Yes. With V_GS(th) as low as 0.70 V min and guaranteed R_DS(on) ≤ 0.004 Ω at V_GS = 2.5 V, the device fully enhances using standard 3.3 V logic outputs. Gate capacitance (C_iss = 4660 pF) requires careful layout to minimize ringing, but no external level shifter or driver IC is needed for ≤1 MHz switching.

Does STL120N2VH5 have avalanche capability, and how is it rated?

Yes. It is rated for repetitive and non-repetitive avalanche with I_AR = 20 A and single-pulse E_AS = 300 mJ at T_j = 25 °C, V_DD = 14 V, and I_D = I_AR. This capability is validated per JEDEC JESD24-1 and supports robustness against inductive switching transients in motor gate drives and hot-swap circuits.

What is the recommended PCB footprint for the PowerFLAT™ 5x6 package?

The official recommended footprint (Figure 21, Doc ID 15603 Rev 2) uses a 5.35 mm × 4.41 mm solder mask opening for the drain pad, 1.27 mm pitch for source/gate pads, and 0.95 mm pad width. Thermal vias (≥8×0.3 mm diameter) centered under the drain pad are required to achieve the specified R_thj-pcb = 31.25 °C/W.