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STMicroelectronics STL125N8F7AG

Part No.:
STL125N8F7AG
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
8-PowerVDFN
Datasheet:
AetrixSTL125N8F7AG.pdf
Description:
AUTOMOTIVE-GRADE N-CHANNEL 80 V
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,626

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Product details

Overview

STL125N8F7AG from STMicroelectronics is an AEC-Q101 qualified N-channel 80 V Power MOSFET in PowerFLAT 5x6 package, featuring 3.6 mΩ typ. RDS(on) at VGS = 10 V, 120 A continuous drain current at TC = 25 °C, and 170 mJ single-pulse avalanche energy - deployed in automotive high-current DC-DC converters and motor control inverters.

For engineers reviewing the STL125N8F7AG datasheet, STL125N8F7AG pinout, STL125N8F7AG application, or STL125N8F7AG equivalent, key selection criteria include RDS(on) vs. temperature stability, Crss/Ciss ratio for EMI robustness, wettable flank solder joint inspection capability, and junction-to-case thermal resistance of 0.9 °C/W.

Technical Context

This device implements STripFET F7 trench-gate technology to achieve ultra-low on-resistance while reducing gate charge (Qg = 76 nC) and reverse transfer capacitance (Crss = 77 pF), enabling fast switching (td(off) = 47 ns, tf = 23 ns) with low EMI generation in hard-switched topologies.

Its enhanced avalanche ruggedness (EAS = 170 mJ, IAV = 50 A) and wide operating junction temperature range (–55 to +175 °C) support reliable operation in automotive under-hood environments where thermal transients and load dump events occur.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 80 V - Supports 48 V automotive systems with 20 % margin against ISO 7637-2 load dump peaks.
RDS(on) max 4.5 mΩ - Enables <1.2 W conduction loss at 120 A, critical for high-efficiency traction inverters.
ID (cont.) 120 A @ TC = 25 °C - Matches peak phase current requirements in 10–15 kW BLDC motor drives.
EAS 170 mJ - Withstands unclamped inductive switching stress without failure in H-bridge configurations.
RthJC 0.9 °C/W - Allows direct heatsinking to copper planes or external metal-core PCBs for thermal management.
Crss/Ciss 77/5570 pF - Low ratio minimizes Miller-induced shoot-through risk and improves gate drive immunity.
Qg 76 nC - Reduces gate driver power demand and enables use of cost-effective 1-A peak drivers.

Pinout & Package

STL125N8F7AG uses the PowerFLAT 5x6 WF type C package with wettable flanks for automated optical solder-joint inspection. The exposed drain pad occupies the center-bottom area, and terminals are arranged in a 4-pin configuration with dual-source and dual-drain layout.

Pin/Terminal Circuit Role Design Meaning
D (pins 5, 6, 7, 8) Drain High-current output node connected to internal die backside; electrically tied to exposed copper pad for thermal and electrical conduction.
G (pin 4) Gate Control input requiring ≤10 V drive; isolated from drain by optimized trench gate structure to minimize Miller feedback.
S (pins 1, 2, 3) Source Return path for load current; split into three pins to reduce parasitic inductance and improve current sharing in high-di/dt applications.

Key Features

Feature Design Value
AEC-Q101 qualification Validated for automotive under-hood use per stress test conditions including HTOL, TC, and UHAST.
Wettable flank package Side-wettable leads enable AOI detection of solder fillet integrity without X-ray inspection.
Low Crss/Ciss ratio 1.4 % - Reduces dv/dt-induced gate voltage spikes and improves noise immunity in noisy ECU environments.
High avalanche ruggedness 170 mJ EAS at VDD = 60 V - Eliminates need for external snubbers in inductive load switching.
Enhanced FoM (RDS(on) × Qg) 342 Ω·nC - Balances conduction and switching losses for optimal efficiency in 20–100 kHz PWM applications.

Applications

Automotive DC-DC Converters Electric Power Steering (EPS)

Use Scenario: 12 V to 48 V bi-directional buck-boost converter in mild hybrid vehicles.

IC Role / Device Role / Timing Role: Primary high-side switch handling up to 120 A continuous current with 80 V blocking capability.

Use Value: 3.6 mΩ RDS(on) reduces conduction loss by >35 % versus legacy 6.5 mΩ MOSFETs, improving system efficiency from 92 % to 94.5 %.

Use Scenario: Three-phase inverter driving 1.5 kW brushless motor in column-assist EPS systems.

IC Role / Device Role / Timing Role: Low-side switching element in 60 kHz PWM-controlled H-bridge with fast fall time (23 ns).

Use Value: 76 nC total gate charge enables clean turn-off under high di/dt, suppressing shoot-through during commutation transitions.

On-Board Charger (OBC) PFC Stage 48 V Server PSU Sync Rectification

Use Scenario: Boost PFC switch in 3.3 kW OBC front-end operating at 100 kHz.

IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET with low Crss to minimize EMI in high-frequency boost topology.

Use Value: 77 pF Crss limits Miller plateau duration, allowing stable gate drive with minimal dead-time overhead.

Use Scenario: Secondary-side synchronous rectifier in 48 V/12 V isolated DC-DC module for AI server racks.

IC Role / Device Role / Timing Role: High-current, low-VDS rectifying switch replacing Schottky diodes in LLC resonant converter.

Use Value: 1.2 V forward drop of integrated body diode at 120 A enables >2.1 W reduction in conduction loss per device versus 0.8 V Schottky.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 80 V Power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
Infineon IPP036N08N8 RDS(on) = 3.6 mΩ typ., Qg = 82 nC, same PowerSO-12 package but no wettable flanks. Lacks AEC-Q101 certification and side-wettable leads - unsuitable for automotive AOI-based production lines. Select only for industrial non-automotive applications where optical solder inspection is not required.
ON Semiconductor NTMFS5C673NL RDS(on) = 4.0 mΩ typ., Qg = 65 nC, Power56 package with wettable flanks and AEC-Q101 rated. Lower gate charge improves switching efficiency but higher RDS(on) increases conduction loss at >100 A. Prefer for space-constrained designs needing lower Qg, accept trade-off in thermal performance at full load.

Compared with IPP036N08N8 and NTMFS5C673NL, STL125N8F7AG uniquely combines AEC-Q101 compliance, wettable flank inspection capability, and best-in-class FoM (342 Ω·nC), making it optimal for safety-critical automotive power stages where both reliability and manufacturability are mandatory.

Availability

STL125N8F7AG is available at Aetrix Electronics and suitable for automotive DC-DC converters, electric power steering systems, and on-board chargers requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for STL125N8F7AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

This device belongs to ST's STripFET F7 automotive-qualified Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 48 V mild hybrid and electrified vehicle subsystems.

FAQ

What is the maximum allowable gate-source voltage for STL125N8F7AG?

The absolute maximum VGS rating is ±20 V, with recommended operating range limited to –10 V to +15 V for reliable long-term performance. Exceeding ±20 V risks permanent gate oxide damage, and sustained operation above +15 V accelerates threshold voltage drift over temperature and lifetime.

Does STL125N8F7AG support paralleling for higher current capacity?

Yes - its positive temperature coefficient of RDS(on) (normalized to 1.8× at TJ = 175 °C) ensures inherent current sharing when multiple devices are paralleled. Layout must balance source inductance and thermal coupling; ST recommends symmetrical PCB routing and shared heatsink mounting.

How does the wettable flank feature impact assembly yield?

The wettable flank geometry enables automated optical inspection (AOI) of solder fillets on all four side terminals, increasing defect detection rate for head-in-pillow and insufficient solder joints by >92 % compared to standard PowerFLAT packages - directly improving first-pass yield in automotive SMT lines.

What is the typical reverse recovery charge (Qrr) of the body diode?

The body diode exhibits Qrr = 66 nC under test conditions of ISD = 100 A, di/dt = 100 A/µs, and VDD = 64 V. This low value supports efficient synchronous rectification and reduces switching losses in freewheeling paths without requiring external Schottky clamps.

STL125N8F7AG Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
-
Package/Case:
8-PowerVDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
80 V
Current - Continuous Drain (Id) @ 25°C:
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
4.5mOhm @ 60A, 10V
Vgs(th) (Max) @ Id:
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
76 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
5570 pF @ 40 V
FET Feature:
-
Power Dissipation (Max):
167W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
PowerFlat™ (5x6)

STL125N8F7AG FAQ

1.How can I place an order for STL125N8F7AG through Aetrix?

Please submit a Request for Quotation (RFQ) for STL125N8F7AG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STL125N8F7AG reliable?

The price and inventory of STL125N8F7AG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STL125N8F7AG is usually 5 days.

3.What payment methods are accepted for STL125N8F7AG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STL125N8F7AG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STL125N8F7AG?

STL125N8F7AG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STL125N8F7AG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STL125N8F7AG?

For technical support, including STL125N8F7AG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STL125N8F7AG requirements.

6.How does Aetrix verify that STL125N8F7AG is sourced from the original manufacturer or authorized distributors?

All STL125N8F7AG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STL125N8F7AG meets industry standards.

7.What is the process for return or replacement of STL125N8F7AG?

All STL125N8F7AG units undergo pre-shipment inspection (PSI). If there is an issue with STL125N8F7AG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STL125N8F7AG part is unused and in its original packaging.

Return procedure for STL125N8F7AG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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