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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STL12N3LLH5

Name: STL12N3LLH5
Brand: STMicroelectronics
SKU: STL12N3LLH5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STL12N3LLH5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: STL12N3LLH5.pdf

Description:: MOSFET N-CH 30V 12A POWERFLAT

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STL12N3LLH5 from STMicroelectronics is an N-channel 30 V PowerFLAT™ (3.3 × 3.3) STripFET™ V MOSFET with R_DS(on) = 7.9 mΩ @ V_GS = 10 V, I_D = 12 A continuous at T_C = 25 °C, and Q_g = 12 nC - optimized for high-efficiency DC-DC converters and synchronous rectification in portable power supplies.

For engineers reviewing the STL12N3LLH5 datasheet, STL12N3LLH5 pinout, STL12N3LLH5 application, or STL12N3LLH5 equivalent, key selection criteria include low gate charge for fast switching, ultra-low on-resistance for reduced conduction loss, thermal performance on FR-4 PCBs, and avalanche ruggedness in unclamped inductive loads.

Technical Context

This device uses ST's STripFET™ V process to achieve a figure-of-merit (R_DS(on) × Q_g) of 95 mΩ·nC, enabling high-frequency operation up to 1 MHz in buck converters. Its gate threshold voltage (1–2.5 V) supports 4.5 V logic-level drive, and its 1500 pF C_iss ensures stable gate control under typical PWM conditions.

The MOSFET features a monolithic source-drain diode with t_rr = 25 ns and Q_rr = 17.5 nC at T_j = 150 °C, supporting efficient synchronous rectification. Thermal resistance R_thj-pcb is 42.8 °C/W (transient, 1 in² FR-4, 2 oz Cu), confirming suitability for compact board layouts without heatsinks.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - maximum drain-source blocking voltage for 24 V system rail protection
R_DS(on)	7.9 mΩ @ V_GS = 10 V - enables <150 mW conduction loss at 12 A DC current
Q_g	12 nC - allows full turn-on with <1 µs delay using 12 Ω gate resistor at 5 V drive
I_D (cont)	12 A @ T_C = 25 °C - supports high-current point-of-load regulation in space-constrained designs
t_rr	25 ns - minimizes reverse recovery loss during hard-switched synchronous rectification
R_thj-pcb	42.8 °C/W - limits junction rise to ~55 °C above ambient at 2 W dissipation on standard PCB

Pinout & Package

STL12N3LLH5 is housed in a PowerFLAT™ (3.3 × 3.3) chip-scale package with exposed drain pad on bottom side for thermal and electrical connection. The package has three terminals: Source (S), Gate (G), and Drain (D), with Drain electrically and thermally connected to the bottom copper pad.

Pin/Terminal	Circuit Role	Design Meaning
Drain (bottom pad)	High-side switch node / heat sink interface	Electrically tied to PCB copper pour for low-inductance power routing and thermal dissipation
Source	Reference node for gate drive and current sensing	Connected to ground or low-side return path; used for Kelvin sensing in precision applications
Gate	Control input for channel modulation	Requires <12 nC charge for full enhancement; compatible with 3.3 V/5 V microcontroller outputs

Key Features

Feature	Design Value
Industry-benchmark R_DS(on) × Q_g	95 mΩ·nC - enables >95% efficiency in 12 V → 3.3 V, 10 A buck converters at 500 kHz
High avalanche ruggedness	Rated for unclamped inductive switching (UIL) - withstands energy spikes without failure in motor gate drivers
Low gate drive power loss	Q_g = 12 nC + C_iss = 1500 pF - reduces driver IC power consumption below 10 mW at 1 MHz
Thermally enhanced PCB mounting	R_thj-pcb = 42.8 °C/W - eliminates need for external heatsink in ≤2 W dissipation applications

Applications

DC-DC Synchronous Buck Converter

USB-C Power Delivery Sink

Use Scenario: Step-down conversion from 12 V or 20 V input to 5 V/9 V/15 V output in portable chargers and PD adapters.

IC Role / Device Role / Timing Role: High-side or low-side synchronous rectifier MOSFET, switching at 200–1000 kHz with precise dead-time control.

Use Value: 7.9 mΩ R_DS(on) cuts conduction loss by >30% vs. legacy 12 mΩ devices, improving thermal margin at 10–15 A load.

Use Scenario: Output stage FET in USB-C PD sink circuits handling up to 100 W (20 V/5 A).

IC Role / Device Role / Timing Role: Low-side switch controlling VBUS discharge and reverse current blocking during port swap events.

Use Value: 1.1 V V_SD forward drop at 12 A ensures <13 mW body-diode loss during transient reverse conduction.

Automotive LED Headlamp Driver

Industrial PLC Digital Output Module

Use Scenario: PWM-controlled high-current LED string driver in adaptive front lighting systems (AFS).

IC Role / Device Role / Timing Role: Low-side current sink switch operating at 1–10 kHz with fast turn-off for precise dimming resolution.

Use Value: 22.7 ns fall time and 4.5 ns turn-off delay enable <1% duty-cycle accuracy at 10 kHz, critical for flicker-free illumination.

Use Scenario: Solid-state replacement for electromechanical relays in 24 V digital output modules driving solenoids or indicators.

IC Role / Device Role / Timing Role: Load switch with integrated overcurrent and thermal protection, controlled via isolated GPIO.

Use Value: 48 A pulsed current rating (I_DM) supports 5× inrush current of 24 V solenoids without derating or snubbers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 30 V PowerFLAT MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon BSC014N03LS	R_DS(on) = 1.4 mΩ lower (6.5 mΩ), Q_g = 14.5 nC - higher gate charge increases drive loss	Better conduction efficiency but requires stronger gate driver for same switching speed	Preferred when board space allows larger gate resistor and driver capability is available
ON Semiconductor NTMFS4C09NT1G	R_DS(on) = 9.0 mΩ, Q_g = 10.5 nC - slightly higher on-resistance but lower gate charge	Lower switching loss in high-frequency (>1 MHz) applications where gate drive power dominates	Preferred for ultra-thin power supplies targeting >96% efficiency at 1 MHz switching

Compared with BSC014N03LS and NTMFS4C09NT1G, STL12N3LLH5 offers the best balance of low R_DS(on), moderate Q_g, and proven avalanche robustness - making it optimal for cost-sensitive industrial and consumer power stages where reliability under transient stress is critical.

Availability

STL12N3LLH5 is available at Aetrix Electronics and suitable for DC-DC converters, USB-C power delivery sinks, automotive LED drivers, and industrial digital output modules requiring stable component supply and long-term manufacturability.

Supply support for STL12N3LLH5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, MCU, power, and sensor solutions for industrial, automotive, and consumer markets.

The STL12N3LLH5 belongs to ST's STripFET™ V Power MOSFET product line, engineered specifically for high-efficiency, high-density power conversion in space-constrained applications such as portable chargers and embedded power supplies.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STL12N3LLH5 supports 7.5 A continuous drain current at T_C = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limitations of the PowerFLAT™ (3.3 × 3.3) package when mounted on standard FR-4 PCBs without additional copper area or airflow.

Does this MOSFET require a gate resistor for stability in switching applications?

Yes - a gate resistor (typically 4.7–12 Ω) is recommended to dampen ringing caused by gate loop inductance and prevent unintended oscillation. The device's 1.5 Ω typical gate input resistance and 1500 pF C_iss make it susceptible to parasitic resonance without proper gate network design.

Can STL12N3LLH5 be used in avalanche mode for inductive load switching?

Yes - the device is rated for unclamped inductive switching (UIL) per Figure 5 and Figure 6 in the datasheet. Its high avalanche ruggedness allows safe operation in relay drivers and solenoid controls where energy must be dissipated within the MOSFET during turn-off.

Is the PowerFLAT™ (3.3 × 3.3) package lead-free and RoHS-compliant?

Yes - the STL12N3LLH5 uses an ECOPACK®-compliant PowerFLAT™ package meeting RoHS Directive 2011/65/EU and REACH SVHC requirements. The device is halogen-free and qualifies for lead-free reflow soldering per JEDEC J-STD-020.

STL12N3LLH5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ V

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 4.5 V

Vgs (Max):: ±22V

Input Capacitance (Ciss) (Max) @ Vds:: 1500 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2W (Ta), 50W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerFlat™ (3.3x3.3)

STL12N3LLH5 FAQ

1.How can I place an order for STL12N3LLH5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STL12N3LLH5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STL12N3LLH5 reliable?

The price and inventory of STL12N3LLH5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STL12N3LLH5 is usually 5 days.

3.What payment methods are accepted for STL12N3LLH5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STL12N3LLH5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STL12N3LLH5?

STL12N3LLH5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STL12N3LLH5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STL12N3LLH5?

For technical support, including STL12N3LLH5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STL12N3LLH5 requirements.

6.How does Aetrix verify that STL12N3LLH5 is sourced from the original manufacturer or authorized distributors?

All STL12N3LLH5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STL12N3LLH5 meets industry standards.

7.What is the process for return or replacement of STL12N3LLH5?

All STL12N3LLH5 units undergo pre-shipment inspection (PSI). If there is an issue with STL12N3LLH5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STL12N3LLH5 part is unused and in its original packaging.

Return procedure for STL12N3LLH5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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