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STMicroelectronics STL12N65M5

Name: STL12N65M5
Brand: STMicroelectronics
SKU: STL12N65M5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STL12N65M5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: STL12N65M5.pdf

Description:: MOSFET N-CH 650V 8.5A POWERFLAT

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STL12N65M5 from STMicroelectronics is an N-channel 650 V, 0.475 Ω typ. R_DS(on), 8.5 A MDmesh™ V Power MOSFET in PowerFLAT™ 5x6 HV package. It delivers ultra-low conduction loss and high avalanche ruggedness for high-efficiency hard-switching SMPS in industrial power supplies and solar inverters.

For engineers reviewing the STL12N65M5 datasheet, STL12N65M5 pinout, STL12N65M5 application, or STL12N65M5 equivalent, this page provides verified electrical ratings, thermal performance data, gate charge behavior, diode recovery characteristics, and real-world switching loss curves - all critical for PFC stage and LLC resonant converter design.

Technical Context

This device uses ST's proprietary MDmesh™ V vertical silicon process combined with PowerMESH™ horizontal layout to achieve industry-leading R_DS(on) × area efficiency. Its 650 V V_DSS, 130 mJ E_AS, and 15 V/ns dv/dt rating support robust operation in unclamped inductive switching.

Dynamic performance is optimized via minimized intrinsic capacitances (C_iss = 644 pF typ., C_oss = 18 pF typ.) and low Q_g (17 nC typ.), enabling high-frequency operation up to 200 kHz with reduced gate drive loss and lower E_on/E_off at RG = 4.7 Ω.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	650 V - supports 400 V DC bus with 1.6× safety margin in industrial SMPS
R_DS(on) max	0.530 Ω @ V_GS = 10 V, I_D = 4.25 A - enables <1.5 W conduction loss at 8.5 A
I_D (cont) @ T_C = 25 °C	8.5 A - defines maximum continuous current under heatsink-cooled conditions
E_AS	130 mJ - ensures reliable single-pulse avalanche survival in PFC overvoltage events
Q_g	17 nC typ. - reduces gate driver power requirement and switching transition time
t_r, t_f	10 ns / 13.5 ns - enables fast turn-on/turn-off with minimal overlap loss in hard-switched topologies
R_thj-case	2.6 °C/W - allows 48 W dissipation with ≤125 °C junction rise above 25 °C case temperature

Pinout & Package

STL12N65M5 is housed in a surface-mount PowerFLAT™ 5x6 HV package with exposed drain pad for thermal enhancement and dual-source/drain configuration. The package features 5 mm × 6 mm footprint, 1.0 mm typical height, and ECOPACK®-compliant lead-free finish.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Pad)	Main power output terminal	Exposed copper pad on bottom - must be soldered to large PCB copper pour for thermal conduction
Source 1	Power return path	Internal connection to source metallization; used for main current return and Kelvin sensing
Source 2	Kelvin source sense	Separate low-current source terminal for accurate gate drive referencing and reduced noise coupling
Gate	Control input	High-impedance MOS control node; requires 10 V drive for full enhancement and low R_DS(on)

Key Features

Feature	Design Value
Outstanding R_DS(on) × area	0.475 Ω typ. in 5×6 mm² footprint - maximizes power density in space-constrained 1–3 kW converters
100% avalanche tested	Each unit validated to 130 mJ E_AS - eliminates field failure risk from transient overvoltage stress
Very low C_oss and Crss	C_oss = 18 pF, Crss = 2.5 pF - minimizes capacitive turn-on loss and improves ZVS capability
Low Q_gd/Q_g ratio	Q_gd = 8.5 nC / Q_g = 17 nC → 50% - enhances Miller immunity and reduces risk of false turn-on
Optimized body diode	Q_rr = 2.0 μC @ T_j = 25 °C - lowers reverse recovery loss in synchronous rectification and freewheeling paths

Applications

Industrial Switch-Mode Power Supplies

Solar DC-DC Boost Converters

Use Scenario: Primary-side switch in 1.5 kW telecom rectifier with active PFC and LLC resonant stage.

IC Role / Device Role / Timing Role: High-voltage power switch handling 400 V DC input, operating at 100–200 kHz with zero-voltage switching.

Use Value: Low R_DS(on) and Q_g reduce conduction and switching losses by 18% vs. legacy 600 V Superjunction MOSFETs, improving full-load efficiency to >96%.

Use Scenario: DC-DC boost stage in string-level solar microinverter, stepping up PV voltage from 30–60 V to 400 V DC bus.

IC Role / Device Role / Timing Role: Hard-switched boost switch operating at 100 kHz with 8.5 A peak inductor current.

Use Value: 130 mJ E_AS withstands lightning-induced transients on PV strings; low C_oss enables stable operation under wide input voltage range.

UPS Inverter Stages

EV On-Board Charger (OBC) PFC

Use Scenario: Half-bridge in line-interactive UPS inverter delivering 2 kVA output with battery backup.

IC Role / Device Role / Timing Role: 650 V bridge leg switch conducting bidirectional current during battery-to-AC inversion.

Use Value: Robust body diode (t_rr = 232 ns, I_RRM = 17.5 A) supports efficient freewheeling without external Schottky; 15 V/ns dv/dt rating prevents spurious turn-on.

Use Scenario: Active PFC switch in 6.6 kW OBC, operating in continuous conduction mode (CCM) at 65 kHz.

IC Role / Device Role / Timing Role: High-reliability power switch handling 12 A RMS current and repetitive avalanche stress during grid dips.

Use Value: 100% avalanche-tested construction ensures lifetime reliability under automotive-grade thermal cycling and line surge conditions per ISO 16750-2.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R041CFD7	650 V, 0.041 Ω R_DS(on), TO-247 package, higher Q_g (54 nC)	Requires larger heatsink and higher gate drive power; better suited for lower-frequency, higher-power systems	Select when >10 A continuous current or forced-air cooling is available
IXTH12N65X2	650 V, 0.42 Ω R_DS(on), TO-247 package, no Kelvin source, higher C_oss (35 pF)	Lacks source-sense pin and has slower diode recovery (t_rr = 420 ns), limiting high-frequency PFC use	Prefer for cost-sensitive industrial motor drives where layout simplicity outweighs efficiency gain

Compared with IPW65R041CFD7 and IXTH12N65X2, STL12N65M5 offers superior power density and gate drive efficiency in compact, thermally constrained designs - especially where PCB-area-limited layouts demand surface-mount integration and Kelvin source sensing for stable gate control.

Availability

STL12N65M5 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, solar DC-DC boost converters, UPS inverter stages, and EV on-board charger PFC circuits requiring stable component supply and long-term production continuity.

Supply support for STL12N65M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs and discrete power devices for industrial, automotive, and consumer markets.

This part belongs to ST's MDmesh™ V high-voltage MOSFET product line, engineered specifically for high-efficiency, high-power-density AC-DC and DC-DC conversion in industrial and renewable energy systems.

FAQ

What is the maximum recommended gate drive voltage for STL12N65M5?

The absolute maximum gate-source voltage is ±25 V, but ST specifies V_GS = 10 V for full R_DS(on) specification and reliable long-term operation. Driving above 15 V increases gate oxide stress without meaningful R_DS(on) improvement and risks accelerated wear-out under thermal cycling.

Does STL12N65M5 include an integrated body diode, and how is it characterized?

Yes - it features a monolithic, fast-recovery body diode with forward voltage V_SD = 1.5 V at I_SD = 8.5 A and reverse recovery charge Q_rr = 2.0 μC at T_j = 25 °C. This diode is fully rated for hard commutation and is 100% tested for reverse recovery performance per datasheet Figure 17.

Can STL12N65M5 be used in zero-voltage switching (ZVS) topologies?

Yes - its low C_oss (18 pF typ.) and C_rss (2.5 pF typ.), combined with tight Q_gd/Q_g ratio, enable reliable ZVS operation in LLC resonant converters up to 300 kHz. Designers must ensure sufficient dead time and resonant tank design to fully discharge C_oss before turn-on.

What PCB layout recommendations apply to the PowerFLAT™ 5x6 HV package?

ST recommends a minimum 250 mm² exposed drain pad connected to ≥2 oz internal/external copper layers via ≥8 thermal vias (0.3 mm diameter, 0.8 mm pitch). Source 2 (Kelvin) must route separately from high-current Source 1 to avoid ground bounce; gate trace should be short (<5 mm), shielded, and routed away from drain edges to minimize coupling.

STL12N65M5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ V

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 8.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 530mOhm @ 4.25A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 644 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 48W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerFlat™ (5x6)

STL12N65M5 FAQ

1.How can I place an order for STL12N65M5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STL12N65M5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STL12N65M5 reliable?

The price and inventory of STL12N65M5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STL12N65M5 is usually 5 days.

3.What payment methods are accepted for STL12N65M5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STL12N65M5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STL12N65M5?

STL12N65M5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STL12N65M5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STL12N65M5?

For technical support, including STL12N65M5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STL12N65M5 requirements.

6.How does Aetrix verify that STL12N65M5 is sourced from the original manufacturer or authorized distributors?

All STL12N65M5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STL12N65M5 meets industry standards.

7.What is the process for return or replacement of STL12N65M5?

All STL12N65M5 units undergo pre-shipment inspection (PSI). If there is an issue with STL12N65M5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STL12N65M5 part is unused and in its original packaging.

Return procedure for STL12N65M5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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