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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STL13N60M2

Name: STL13N60M2
Brand: STMicroelectronics
SKU: STL13N60M2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STL13N60M2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: STL13N60M2.pdf

Description:: MOSFET N-CH 600V 7A POWERFLAT HV

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STL13N60M2 from STMicroelectronics is an N-channel 600 V, 7 A Power MOSFET in PowerFLAT™ 5x6 HV package, featuring 0.39 Ω typ. R_DS(on), 17 nC total gate charge, and 100% avalanche tested. It implements MDmesh II Plus™ technology for high-efficiency switching in offline SMPS and PFC stages.

For engineers reviewing the STL13N60M2 datasheet, STL13N60M2 pinout, STL13N60M2 application, or STL13N60M2 equivalent, key selection criteria include gate charge (17 nC), R_DS(on) at 10 V (0.42 Ω max), avalanche ruggedness (125 mJ E_AS), thermal resistance (2.27 °C/W j-case), and PowerFLAT™ 5x6 HV mounting requirements.

Technical Context

This MOSFET uses a vertical strip-based MDmesh II Plus™ structure to simultaneously minimize R_DS(on) × area and Q_g, enabling high-frequency operation with low conduction and switching losses. Its Zener-protected gate and low input resistance (6.6 Ω) improve robustness against transient stress.

The device supports hard-switched topologies up to 300 V bus voltage, with dv/dt ruggedness rated at 50 V/ns (V_DS ≤ 480 V) and diode recovery performance characterized at 297 ns t_rr (T_j = 25 °C) and 394 ns (T_j = 150 °C).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS Rating	600 V - supports 400 V AC mains-derived DC bus with 50 V margin for transients
R_DS(on) max	0.42 Ω @ V_GS = 10 V, I_D = 4.5 A - enables <1.5 W conduction loss at 7 A continuous
Q_g	17 nC - reduces gate drive power and enables >100 kHz operation with standard drivers
E_AS	125 mJ - withstands unclamped inductive switching events without failure
R_thj-case	2.27 °C/W - allows 55 W dissipation at T_C = 25 °C, supporting compact heatsink designs
t_rr	297 ns @ T_j = 25 °C - limits diode reverse recovery loss in bridge configurations
V_GS(th)	2–4 V - ensures clean turn-on with standard 5 V or 10 V logic-level gate drivers

Pinout & Package

STL13N60M2 is housed in a surface-mount PowerFLAT™ 5x6 HV package with exposed drain pad for thermal and electrical performance. The package features 8 terminals: four parallel drain pins (D), one gate pin (G), and three parallel source pins (S), optimized for low-inductance PCB layout and high-current routing.

Pin/Terminal	Circuit Role	Design Meaning
D (Pins 5,6,7,8)	Drain connection	Four parallel terminals tied to large copper-exposed drain pad; carries full load current and provides primary thermal path to PCB
G (Pin 4)	Gate control	Single low-inductance gate input; requires external gate resistor (e.g., 4.7 Ω) for controlled switching
S (Pins 1,2,3)	Source reference	Three parallel source terminals connected to source metallization; forms return path and thermal interface for source-side traces

Key Features

Feature	Design Value
MDmesh II Plus™ architecture	Combines vertical conduction with strip layout to achieve 0.39 Ω·mm² R_DS(on) × area - 25% lower than prior MDmesh II
Zener-protected gate	Integrated gate-source Zener clamps V_GS to ±25 V, eliminating need for external gate protection in most applications
100% avalanche tested	Each unit undergoes single-pulse unclamped inductive test at I_AR = 2.8 A, ensuring reliability in overvoltage fault conditions
Low C_iss/C_oss ratio	C_iss = 580 pF, C_oss = 32 pF - improves zero-voltage switching (ZVS) capability in resonant converters

Applications

Server PSU Primary Switch

Industrial AC-DC Adapter

Use Scenario: High-density 80 PLUS Titanium server power supply operating at 100–500 kHz with active clamp forward or LLC topology.

IC Role / Device Role / Timing Role: Main switch in primary-side power stage handling 7 A RMS current at 400 V DC bus.

Use Value: Low Q_g (17 nC) and R_DS(on) (0.39 Ω typ.) reduce switching and conduction losses, enabling >96% efficiency at full load.

Use Scenario: 300 W industrial AC-DC adapter with universal input (85–265 V AC) and regulated 24 V output.

IC Role / Device Role / Timing Role: PFC boost switch operating in continuous conduction mode (CCM) at 65–100 kHz.

Use Value: Avalanche rating (125 mJ E_AS) and dv/dt ruggedness (50 V/ns) ensure reliable operation during line surges and load transients.

LED Driver Flyback Switch

Solar Microinverter Half-Bridge

Use Scenario: Isolated flyback LED driver for street lighting with 300–450 V DC input and constant-current output.

IC Role / Device Role / Timing Role: Primary-side switching element controlling energy transfer into transformer during each cycle.

Use Value: Fast diode recovery (t_rr = 297 ns) minimizes cross-conduction loss when paired with synchronous rectification.

Use Scenario: Single-phase microinverter converting 30–60 V DC PV string output to 230 V AC grid with H6 topology.

IC Role / Device Role / Timing Role: High-side switch in half-bridge leg, switching at 20–50 kHz with bipolar voltage swing.

Use Value: Low R_thj-case (2.27 °C/W) and robust SOA enable stable operation under partial shading and high ambient temperature (≥70 °C).

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPD60R380P7	600 V, 0.38 Ω max R_DS(on), 21 nC Q_g, TO-252 package	Higher thermal resistance (3.5 °C/W j-case); requires larger PCB copper area for same power dissipation	Preferred where through-hole assembly or higher surge current (32 A I_DM) is required
STP13NK60Z	600 V, 0.43 Ω max R_DS(on), 45 nC Q_g, TO-220 package	Higher gate charge increases driver loss; lacks Zener gate protection and avalanche testing	Lower-cost option for <50 kHz applications where space and efficiency are less critical

Compared with IPD60R380P7 and STP13NK60Z, STL13N60M2 delivers superior high-frequency efficiency via lower Q_g and better thermal coupling, while its integrated Zener and 100% avalanche screening provide higher system-level reliability in compact, high-power-density designs.

Availability

STL13N60M2 is available at Aetrix Electronics and suitable for server PSUs, industrial AC-DC adapters, and LED driver flyback converters requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for STL13N60M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for industrial, automotive, and consumer markets.

The STL13N60M2 belongs to ST's MDmesh™ high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-frequency switched-mode power supplies and PFC circuits in space-constrained applications.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STL13N60M2 supports 4.7 A continuous drain current at T_C = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limits imposed by the PowerFLAT™ 5x6 HV package's 2.27 °C/W junction-to-case resistance and safe operating area constraints at elevated temperatures.

Does this MOSFET require external gate protection?

No external gate protection is required under normal operating conditions. The device integrates a Zener diode between gate and source, clamping V_GS to ±25 V, which covers typical gate driver overshoot and ESD events per IEC 61000-4-2 Level 2.

Can STL13N60M2 be used in synchronous rectification topologies?

It is not recommended as a synchronous rectifier due to its body diode's 297 ns reverse recovery time and 1.6 V forward voltage at 7 A. Its design intent is as a high-side or low-side switch in hard-switched or resonant primary-side topologies-not as a secondary-side rectifier.

What is the recommended PCB footprint for thermal performance?

The recommended footprint per Figure 21 specifies a 4.4 mm × 3.2 mm central thermal pad with 0.5 mm solder mask opening, surrounded by 0.3 mm wide traces for pins 1–3 (S), 4 (G), and 5–8 (D). Minimum 1 inch² of 2 oz copper on the bottom layer is required to achieve the rated 59 °C/W junction-to-PCB thermal resistance.

STL13N60M2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II Plus

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 420mOhm @ 4.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 580 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 55W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerFlat™ (5x6) HV

STL13N60M2 FAQ

1.How can I place an order for STL13N60M2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STL13N60M2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STL13N60M2 reliable?

The price and inventory of STL13N60M2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STL13N60M2 is usually 5 days.

3.What payment methods are accepted for STL13N60M2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STL13N60M2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STL13N60M2?

STL13N60M2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STL13N60M2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STL13N60M2?

For technical support, including STL13N60M2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STL13N60M2 requirements.

6.How does Aetrix verify that STL13N60M2 is sourced from the original manufacturer or authorized distributors?

All STL13N60M2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STL13N60M2 meets industry standards.

7.What is the process for return or replacement of STL13N60M2?

All STL13N60M2 units undergo pre-shipment inspection (PSI). If there is an issue with STL13N60M2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STL13N60M2 part is unused and in its original packaging.

Return procedure for STL13N60M2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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