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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STL13NM60N

Name: STL13NM60N
Brand: STMicroelectronics
SKU: STL13NM60N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STL13NM60N

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: STL13NM60N.pdf

Description:: MOSFET N-CH 600V 10A PWRFLAT HV

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STL13NM60N from STMicroelectronics is an N-channel 600 V, 0.320 Ω typ. (0.385 Ω max), 10 A Power MOSFET in PowerFLAT™ 8x8 HV package, built on MDmesh™ II vertical strip technology. It delivers ultra-low gate charge (27 nC) and low input capacitance (790 pF), enabling high-efficiency operation in hard-switched PFC and SMPS stages up to 100 kHz.

For engineers reviewing the STL13NM60N datasheet, STL13NM60N pinout, STL13NM60N application, or STL13NM60N equivalent, key selection criteria include R_DS(on) at 10 V gate drive, avalanche ruggedness (E_AS = 93 mJ), thermal resistance (R_thj-case = 1.39 °C/W), and diode recovery performance (Q_rr = 2 µC at T_j = 25 °C).

Technical Context

This MOSFET employs ST's second-generation MDmesh™ II process with optimized strip layout and deep-trench vertical structure to minimize conduction and switching losses simultaneously. Its 600 V V_DS rating and 150 °C T_jmax support industrial off-line converters operating under wide input ranges and transient overvoltage conditions.

The device integrates a fast-recovery body diode with t_rr = 340 ns and Q_rr = 2 µC (T_j = 25 °C), enabling ZVS-capable topologies and reducing EMI in bridge-leg configurations. Gate threshold voltage (2–4 V) and low R_G (4.7 Ω) ensure robust TTL/CMOS-level drive compatibility without external gate buffers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports 400 VAC input rectified systems with 20% margin for surge and ringing
R_DS(on) typ.	0.320 Ω @ V_GS = 10 V, I_D = 5 A - enables <1.6 W conduction loss at 10 A continuous drain current
Q_g	27 nC - reduces gate driver power demand and allows use of low-cost SOT-23 drivers
E_AS	93 mJ - ensures reliable unclamped inductive switching in PFC boost chokes and flyback snubbers
C_iss	790 pF @ V_DS = 50 V - minimizes Miller-induced shoot-through risk in half-bridge layouts
t_rr	340 ns @ I_SD = 10 A, di/dt = 100 A/µs - lowers diode reverse recovery loss and associated voltage spikes
R_thj-case	1.39 °C/W - permits >60 W power dissipation with modest heatsinking in PowerFLAT™ 8x8 HV

Pinout & Package

STL13NM60N uses the PowerFLAT™ 8x8 HV surface-mount package with exposed drain pad (top-side source terminals). The package features 5 solderable terminals: 3 source pins (S1–S3), 1 gate (G), and 1 drain (D) on the bottom thermal pad.

Pin/Terminal	Circuit Role	Design Meaning
S1–S3	Source connection (parallel)	Low-inductance parallel routing reduces source loop inductance and improves switching stability
G	Gate control terminal	Accepts standard 10 V logic-level drive; intrinsic R_G = 4.7 Ω limits dV/dt-induced turn-on risk
D	Drain (thermal pad)	Exposed copper pad on underside provides primary thermal path to PCB copper pour or heatsink

Key Features

Feature	Design Value
100% avalanche tested	Guarantees single-pulse E_AS ≥ 93 mJ across production lot-no derating needed for inductive load transients
Low C_iss/C_oss/C_rss	790 pF / 60 pF / 3.6 pF enables clean hard-switching waveforms with minimal voltage overshoot at 300 V bus
MDmesh™ II vertical architecture	Reduces R_DS(on) × Q_g figure-of-merit by 35% vs. planar 600 V MOSFETs-critical for high-frequency PFC efficiency
PowerFLAT™ 8x8 HV thermal design	1.39 °C/W R_thj-case allows 90 W continuous dissipation when mounted on 1-in² 2 oz Cu board
Fast body diode recovery	Q_rr = 2 µC and I_RRM = 18 A enable synchronous rectification replacement in low-power LLC resonant converters

Applications

Industrial AC-DC PFC Stage

Server/Telecom SMPS Primary Switch

Use Scenario: Active boost PFC stage in 1–2 kW telecom rectifiers operating at 65–100 kHz with universal 85–265 VAC input.

IC Role / Device Role / Timing Role: Main switching element handling full line current; operates in continuous conduction mode (CCM) with zero-current turn-on.

Use Value: Low Q_g and R_DS(on) reduce total switching + conduction loss to <2.1 W at 10 A, improving system efficiency by 0.8% over legacy 650 V MOSFETs.

Use Scenario: Primary-side switch in 500 W forward or half-bridge DC-DC converter for data center power supplies.

IC Role / Device Role / Timing Role: High-side switch in isolated topology; subjected to 400 V DC bus and repetitive 300 V dv/dt stress during turn-off.

Use Value: 15 V/ns dv/dt immunity and 600 V V_DS rating prevent false turn-on and avalanche failure during fast voltage transitions.

Motor Drive Inverter Leg

LED Driver Flyback Switch

Use Scenario: Upper-leg switch in 3-phase inverter driving 0.75 kW induction motor in HVAC blower systems.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 8–16 kHz PWM inverters; body diode conducts freewheeling current during dead-time.

Use Value: 340 ns t_rr and low Q_rr suppress voltage spikes during diode commutation, eliminating need for RC snubbers.

Use Scenario: Primary switch in quasi-resonant flyback LED driver for street lighting (75 W output, 30–55 V LED string).

IC Role / Device Role / Timing Role: Energy-transfer switch operating at variable frequency (40–130 kHz); experiences high peak currents during startup and short-circuit events.

Use Value: 100% avalanche-tested ruggedness ensures survival during repeated output short-circuit tests per IEC 61347-2-13.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12NM60ND	TO-220 package; higher R_DS(on) (0.53 Ω typ.), higher Q_g (42 nC), no integrated fast diode	Requires larger heatsink and external freewheeling diode; suited for lower-frequency (<50 kHz), cost-sensitive designs	Select when board space allows through-hole mounting and thermal budget permits higher conduction loss
IPW60R041P6	650 V, 0.041 Ω R_DS(on), 63 nC Q_g, TO-247 package; CoolMOS™ P6 technology	Lower R_DS(on) but higher gate charge increases driver loss; better for <50 kHz high-power (>3 kW) applications	Prefer for high-current, low-frequency SMPS where conduction loss dominates over switching loss

Compared with STP12NM60ND and IPW60R041P6, STL13NM60N offers optimal balance of low Q_g, fast diode, and compact thermal package-making it uniquely suitable for space-constrained, medium-frequency (65–100 kHz) industrial power supplies requiring high reliability and low EMI.

Availability

STL13NM60N is available at Aetrix Electronics and suitable for industrial AC-DC PFC stages, server/telecom SMPS primary switches, and motor drive inverter legs requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for STL13NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing silicon solutions for automotive, industrial, and power management applications.

This device belongs to ST's MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching in industrial and telecom power supplies operating above 65 kHz.

FAQ

What is the maximum continuous drain current at case temperature of 100 °C?

The STL13NM60N supports 6.5 A continuous drain current at T_C = 100 °C, as specified in Table 2 of the datasheet. This rating assumes proper PCB copper area (≥1 inch², 2 oz Cu) and thermal interface to ambient. Derating is linear between 25 °C and 100 °C case temperature.

Does the STL13NM60N have a fully rated avalanche capability?

Yes-the device is 100% production-tested for single-pulse avalanche energy (E_AS) of 93 mJ at T_j = 25 °C, with I_AR = 3 A and V_DD = 50 V. This rating is guaranteed across all units and does not require additional derating for typical boost PFC or flyback clamp conditions.

Can the PowerFLAT™ 8x8 HV package be hand-soldered?

Hand-soldering is not recommended due to the large thermal pad and tight pitch. Reflow soldering per JEDEC J-STD-020 (peak 260 °C, 30 s) is required. The exposed drain pad must be connected to ≥10 cm² internal or external copper pour for thermal compliance and mechanical reliability.

What is the gate threshold voltage range and its variation over temperature?

V_GS(th) is 2–4 V at T_j = 25 °C, with typical value 3 V. As shown in Figure 10, it decreases linearly to ~2.4 V at T_j = 150 °C, ensuring stable turn-on behavior across full operating junction temperature range without risk of thermal runaway.

STL13NM60N Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 10A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 385mOhm @ 5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 30 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 790 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 90W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerFlat™ (8x8) HV

STL13NM60N FAQ

1.How can I place an order for STL13NM60N through Aetrix?

Please submit a Request for Quotation (RFQ) for STL13NM60N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STL13NM60N reliable?

The price and inventory of STL13NM60N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STL13NM60N is usually 5 days.

3.What payment methods are accepted for STL13NM60N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STL13NM60N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STL13NM60N?

STL13NM60N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STL13NM60N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STL13NM60N?

For technical support, including STL13NM60N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STL13NM60N requirements.

6.How does Aetrix verify that STL13NM60N is sourced from the original manufacturer or authorized distributors?

All STL13NM60N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STL13NM60N meets industry standards.

7.What is the process for return or replacement of STL13NM60N?

All STL13NM60N units undergo pre-shipment inspection (PSI). If there is an issue with STL13NM60N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STL13NM60N part is unused and in its original packaging.

Return procedure for STL13NM60N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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