STMicroelectronics STL15N3LLH5

Overview

STL15N3LLH5 from STMicroelectronics is an N-channel PowerFLAT™ (3.3 × 3.3) STripFET™ V MOSFET rated for 30 V V_DS, 15 A continuous drain current at T_C = 25 °C, and 0.0045 Ω R_DS(on) at V_GS = 10 V. It delivers ultra-low gate charge (Q_g = 12 nC) and high avalanche ruggedness, targeting high-density DC-DC converters in server VRMs and POL modules.

For engineers reviewing the STL15N3LLH5 datasheet, STL15N3LLH5 pinout, STL15N3LLH5 application, or STL15N3LLH5 equivalent, key selection criteria include R_DS(on) × Q_g benchmark performance, thermal resistance to PCB (R_thj-pcb = 42.8 °C/W), safe operating area under pulsed conditions, and compatibility with 4.5 V logic-level gate drive in compact power stages.

Technical Context

This device implements ST's 5th-generation STripFET™ V process in a chip-scale PowerFLAT™ package, optimizing conduction and switching losses simultaneously. Its R_DS(on) of 0.0045 Ω at 10 V and 0.006 Ω at 4.5 V enables efficient operation in synchronous buck topologies with low-side switching duty cycles.

The MOSFET features integrated source-drain diode with t_rr = 25 ns and Q_rr = 17.5 nC at T_j = 150 °C, supporting fast commutation in hard-switched converters. Thermal design relies on direct PCB copper pad conduction, with R_thj-case = 2.5 °C/W and R_thj-pcb = 42.8 °C/W (transient, 1 in² FR-4, 2 oz Cu).

Key Specifications

Pinout & Package

STL15N3LLH5 uses the PowerFLAT™ (3.3 × 3.3) package - a leadless, surface-mount, chip-scale package with exposed drain pad for thermal and electrical connection to PCB copper. The device has three terminals: Drain (D), Source (S), and Gate (G), arranged in a single-row configuration with the drain pad occupying the full bottom side.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 30 V power MOSFET applications.

Compared with BSC014N04LS6 and SiR872DP, STL15N3LLH5 offers the best R_DS(on) × Q_g trade-off in a chip-scale package, delivering superior power density for space-constrained, high-frequency DC-DC stages where thermal path to PCB is well-controlled.

Availability

STL15N3LLH5 is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, and automotive body control modules requiring stable component supply and long-term production continuity.

Supply support for STL15N3LLH5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs, discrete devices, and MEMS sensors for industrial, automotive, and consumer markets.

This part belongs to ST's STripFET™ V Power MOSFET product line, engineered specifically for high-efficiency, high-power-density switching applications in computing, telecom, and industrial power supplies.

FAQ

Is STL15N3LLH5 suitable for 4.5 V gate drive applications?

Yes. The device specifies R_DS(on) = 0.006 Ω at V_GS = 4.5 V and ID = 7.5 A, and V_GS(th) ranges from 1.0 V to 2.5 V. This ensures full enhancement and low conduction loss when driven directly by 3.3 V or 4.5 V logic-level sources without level-shifting circuitry.

What is the maximum pulsed drain current rating for STL15N3LLH5?

The absolute maximum pulsed drain current (I_DM) is 60 A, limited by safe operating area constraints. This rating applies under pulse conditions with defined duty cycle and duration, as verified in the UIS test circuit (Figure 16) and shown in the SOA curve (Figure 2) of the datasheet.

How does the PowerFLAT™ (3.3 × 3.3) package affect thermal performance?

The PowerFLAT™ package uses an exposed drain pad soldered directly to PCB copper, achieving R_thj-pcb = 42.8 °C/W (transient, 1 in² FR-4, 2 oz Cu). This is significantly lower than SO-8 packages (~60–70 °C/W), enabling higher power handling without heatsinks when PCB layout follows ST's recommended copper area guidelines.

Does STL15N3LLH5 have integrated ESD protection on the gate?

No. The datasheet does not specify integrated gate ESD protection structures. External gate protection (e.g., 10 Ω series resistor + 12 V TVS clamp to source) is recommended in systems exposed to handling or system-level ESD events, especially given the ±22 V V_GS absolute maximum rating.