Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STL15N60M2-EP

Name: STL15N60M2-EP
Brand: STMicroelectronics
SKU: STL15N60M2-EP
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: STL15N60M2-EP

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: STL15N60M2-EP.pdf

Description:: MOSFET N-CH 600V 7A POWERFLAT HV

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:2,645

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

STL15N60M2-EP from STMicroelectronics is an N-channel 600 V, 7 A Power MOSFET in PowerFLAT™ 5x6 HV package with 0.389 Ω typ. R_DS(on), 17 nC total gate charge, and 55 W power dissipation. It employs MDmesh™ M2 EP technology for ultra-low turn-off switching losses and is optimized for >150 kHz high-frequency converters in industrial SMPS.

For engineers reviewing the STL15N60M2-EP datasheet, STL15N60M2-EP pinout, STL15N60M2-EP application, or STL15N60M2-EP equivalent, key selection criteria include its 600 V V_(BR)DSS, 2.27 °C/W R_thj-case, 148 pF C_oss,eq, avalanche-rated construction, and Zener-protected gate.

Technical Context

This device uses ST's MDmesh™ M2 EP strip layout and enhanced vertical structure to simultaneously reduce conduction loss (0.389 Ω typ. at V_GS = 10 V, I_D = 4.5 A) and switching loss (5 µJ E_OFF at V_DD = 400 V, I_D = 1.5 A). Its 1.1 pF Crss and 590 pF Ciss enable fast, low-noise switching in hard-switched topologies.

The integrated source-drain diode features 1.6 V V_SD at 7 A and 280 ns trr at T_j = 25 °C, supporting synchronous rectification and flyback operation. The 100% avalanche-tested design ensures robustness under unclamped inductive switching stress up to 110 mJ E_AS.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	600 V - Withstands 600 V drain-source blocking voltage before breakdown, enabling use in 400 V AC-input PFC and offline SMPS stages.
R_DS(on) max	0.418 Ω - Maximum on-resistance at 100 °C case temperature, defining worst-case conduction loss in thermal steady state.
Q_g	17 nC - Total gate charge required for full turn-on, directly determining gate driver current demand and switching speed control.
C_oss,eq	148 pF - Equivalent output capacitance over 0–480 V, critical for calculating resonant tank energy and ZVS feasibility.
E_OFF	5.2 µJ - Measured turn-off energy at 3.5 A and 400 V, quantifying hard-switching loss contribution in high-frequency operation.
R_thj-case	2.27 °C/W - Junction-to-case thermal resistance, enabling accurate heatsink sizing when mounted on a low-impedance copper pad.
I_AR	1.5 A - Repetitive avalanche current rating, specifying maximum inductive energy absorption per pulse without degradation.

Pinout & Package

STL15N60M2-EP is housed in a surface-mount PowerFLAT™ 5x6 HV package with exposed drain pad for thermal and electrical performance. The 8-pin configuration integrates four parallel drain terminals (pins 5–8), one gate terminal (pin 4), and three source terminals (pins 1–3).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3 (S)	Source connection	Three low-inductance source paths reduce common-source inductance and improve switching stability in high-di/dt applications.
4 (G)	Gate input	Single gate terminal with 7 Ω intrinsic resistance; requires external gate resistor tuning to balance switching speed and EMI.
5, 6, 7, 8 (D)	Drain connection	Four paralleled drain terminals tied to large exposed copper pad, providing low thermal resistance and high-current capability.

Key Features

Feature	Design Value
MDmesh™ M2 EP technology	Enables 0.389 Ω R_DS(on) at 600 V rating-achieving higher power density than conventional planar superjunction MOSFETs.
Extremely low gate charge	17 nC Q_g reduces gate drive power and enables efficient operation above 150 kHz without excessive driver heating.
Optimized COSS profile	148 pF C_oss,eq supports soft-switching designs and minimizes capacitive turn-on loss in resonant converters.
Zener-protected gate	Integrated gate oxide protection withstands ±25 V V_GS transients, eliminating need for external gate clamping in noisy environments.
100% avalanche tested	Each unit validated for 110 mJ single-pulse avalanche energy, ensuring reliability in inductive load switching and fault conditions.

Applications

Industrial Switch-Mode Power Supplies

High-Frequency DC-DC Converters

Use Scenario: Primary-side switch in 400 V AC-input, 1 kW telecom rectifier with active PFC and LLC resonant stage.

IC Role / Device Role / Timing Role: High-voltage, high-frequency hard-switched main switch operating at 180 kHz with <5 µJ E_OFF.

Use Value: Low 0.418 Ω R_DS(on) and 148 pF C_oss,eq reduce both conduction and switching losses, improving full-load efficiency by ≥0.8% vs. legacy 600 V MOSFETs.

Use Scenario: Isolated 48 V–12 V intermediate bus converter in server power delivery with 250 kHz fixed-frequency operation.

IC Role / Device Role / Timing Role: Synchronous rectifier control switch in secondary-side synchronous rectification circuit.

Use Value: 1.6 V V_SD and 280 ns trr minimize reverse recovery loss and cross-conduction risk during dead-time transitions.

Photovoltaic Inverters

UPS Systems

Use Scenario: DC-link switch in string-level MPPT boost stage of residential solar inverter with 600 V DC input.

IC Role / Device Role / Timing Role: Fast-turning boost switch handling 7 A continuous current and repetitive 1.5 A avalanche pulses during line transients.

Use Value: 100% avalanche testing and 110 mJ E_AS ensure long-term reliability under partial shading and grid fault conditions.

Use Scenario: Inverter-stage switch in online double-conversion UPS delivering clean 230 V AC output from 380 V DC bus.

IC Role / Device Role / Timing Role: High-reliability main switch rated for continuous 4.6 A at 100 °C case temperature and safe-operating-area-limited pulsed current.

Use Value: 2.27 °C/W R_thj-case allows compact heatsinking while maintaining T_j < 150 °C under sustained overload.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW15N60M2	TO-247-3 package; identical die, higher R_thj-case (0.65 °C/W); no exposed drain pad	Better suited for forced-air-cooled industrial drives where mechanical mounting and creepage dominate	Select when board space permits larger through-hole footprint and thermal interface relies on heatsink contact rather than PCB copper.
IPP60R041P7XKSA1	650 V rating; 0.041 Ω R_DS(on); 32 nC Q_g; TO-220FP package	Lower conduction loss but higher switching loss; unsuitable for >150 kHz due to elevated Q_g and C_oss	Prefer only for lower-frequency (<80 kHz), high-current applications where conduction loss dominates system efficiency.

Compared with STW15N60M2 and IPP60R041P7XKSA1, STL15N60M2-EP delivers superior high-frequency efficiency via its low-Q_g/low-C_oss combination and PowerFLAT™ thermal design-making it optimal for space-constrained, air-cooled, >150 kHz converters where PCB thermal management is prioritized.

Availability

STL15N60M2-EP is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, photovoltaic inverters, high-frequency DC-DC converters, and UPS systems requiring stable component supply and long-term production continuity.

Supply support for STL15N60M2-EP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

The STL15N60M2-EP belongs to ST's MDmesh™ M2 EP high-voltage power MOSFET family, engineered specifically for high-efficiency, high-frequency switching in compact, thermally constrained power conversion systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STL15N60M2-EP supports 4.6 A continuous drain current at T_case = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limits of the PowerFLAT™ 5x6 HV package and must be verified against actual PCB copper area and airflow conditions.

Does this MOSFET include integrated gate protection?

Yes-the STL15N60M2-EP integrates a Zener diode between gate and source, enabling ±25 V gate-source voltage tolerance. This eliminates the need for external gate clamping components in typical industrial noise environments.

Can STL15N60M2-EP replace older STL15N60M2 in existing designs?

Yes-the "-EP" suffix denotes enhanced performance with identical pinout, marking, and package. Key improvements include lower R_DS(on) (0.389 Ω vs. 0.45 Ω typ.), reduced Q_g, and tighter parameter distributions-enabling direct drop-in replacement with measurable efficiency gains.

What is the recommended PCB footprint for thermal performance?

Per Figure 22 in the datasheet, the recommended footprint uses a 4.31 mm × 3.77 mm exposed drain pad with 0.77 mm solder mask opening and 3.04 mm × 0.5 mm thermal vias (minimum 6×) connecting to inner-layer ground planes. This achieves near-datasheet R_thj-case of 2.27 °C/W.

STL15N60M2-EP Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ M2-EP

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 418mOhm @ 4.5A, 10V

Vgs(th) (Max) @ Id:: 4.75V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 590 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 55W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerFlat™ (5x6) HV

STL15N60M2-EP FAQ

1.How can I place an order for STL15N60M2-EP through Aetrix?

Please submit a Request for Quotation (RFQ) for STL15N60M2-EP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STL15N60M2-EP reliable?

The price and inventory of STL15N60M2-EP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STL15N60M2-EP is usually 5 days.

3.What payment methods are accepted for STL15N60M2-EP?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STL15N60M2-EP transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STL15N60M2-EP?

STL15N60M2-EP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STL15N60M2-EP order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STL15N60M2-EP?

For technical support, including STL15N60M2-EP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STL15N60M2-EP requirements.

6.How does Aetrix verify that STL15N60M2-EP is sourced from the original manufacturer or authorized distributors?

All STL15N60M2-EP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STL15N60M2-EP meets industry standards.

7.What is the process for return or replacement of STL15N60M2-EP?

All STL15N60M2-EP units undergo pre-shipment inspection (PSI). If there is an issue with STL15N60M2-EP, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STL15N60M2-EP part is unused and in its original packaging.

Return procedure for STL15N60M2-EP:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…