STMicroelectronics STL160N10F8

Overview

STL160N10F8 from STMicroelectronics is a 100 V, 3.2 mΩ max., 158 A N-channel Power MOSFET in PowerFLAT 5x6 package, fabricated with STripFET F8 trench technology. It delivers ultra-low R_DS(on), low gate charge (90 nC), and 175 °C junction rating for high-efficiency switching in high-current DC-DC stages and motor drive half-bridges.

For engineers reviewing the STL160N10F8 datasheet, STL160N10F8 pinout, STL160N10F8 application, or STL160N10F8 equivalent, key selection criteria include its 100 V V_DS, 3.2 mΩ R_DS(on) at 10 V_GS, 90 nC total gate charge, 175 °C T_J(max), and 100% avalanche tested ruggedness - critical for server PSU, BMS, and power tool H-bridge designs.

Technical Context

This MOSFET employs an enhanced trench gate structure to simultaneously minimize R_DS(on) and internal capacitances (C_iss = 5400 pF, C_oss = 1230 pF), enabling fast switching (t_d(on) = 22 ns, t_f = 19 ns) with reduced switching losses. Its 0.9 °C/W R_thJC supports high-power dissipation on compact PCBs.

The device integrates a robust body diode (V_SD = 1.2 V at 60 A, Q_rr = 160 nC) and is fully characterized for single-pulse avalanche energy (E_AS = 200 mJ at T_J = 25 °C), ensuring reliable operation under transient overvoltage conditions in industrial inverters and battery disconnect circuits.

Key Specifications

Pinout & Package

STL160N10F8 uses the PowerFLAT 5x6 type B package - a surface-mount, thermally enhanced leadless package with exposed drain pad for low-inductance, high-current routing and efficient heat transfer to PCB copper.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V Power MOSFET applications.

Compared with IPP036N10N5 and SiR626DP, STL160N10F8 offers the lowest R_DS(on) and best thermal resistance in its footprint, making it optimal for high-efficiency, high-power-density applications where board space and thermal headroom are constrained.

Availability

STL160N10F8 is available at Aetrix Electronics and suitable for server and telecom power supplies, industrial battery management systems (BMS), and power tools requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for STL160N10F8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, sensors, and automotive ICs.

The STL160N10F8 belongs to ST's STripFET F8 Power MOSFET product line, engineered specifically for high-current, high-efficiency switching in datacenter power, industrial battery systems, and portable power equipment.

FAQ

What is the maximum continuous drain current for STL160N10F8 at 100 °C case temperature?

At T_C = 100 °C, the continuous drain current is 112 A (per Table 1). This value reflects silicon-limited current capability and assumes adequate PCB copper area and thermal vias to maintain case temperature at 100 °C under steady-state operation.

Does STL160N10F8 have a built-in body diode, and what are its key parameters?

Yes, it features an integrated source-drain body diode rated for 110 A continuous forward current (I_SD) at T_C = 25 °C, with V_SD = 1.2 V at 60 A and reverse recovery charge Q_rr = 160 nC - enabling use in synchronous rectification and freewheeling paths without external diodes.

Is STL160N10F8 suitable for paralleling multiple devices in high-current applications?

Yes - its low R_DS(on) tolerance (2.4–3.2 mΩ), matched threshold voltage (V_GS(th) = 2–4 V), and symmetrical multi-pin drain/source configuration enable stable current sharing. Use Kelvin source connections and matched gate resistors to ensure balanced dynamic performance.

What is the recommended PCB footprint and thermal design for STL160N10F8?

Use the official PowerFLAT 5x6 type B footprint (Figure 18), with ≥8 thermal vias (0.3 mm diameter, 0.8 mm pitch) under the exposed drain pad connected to ≥2 oz internal copper planes. Maintain ≥10 mm² of 2 oz copper per amp on source/drain traces to limit temperature rise.