STMicroelectronics STL160N4F7

Overview

STL160N4F7 from STMicroelectronics is an N-channel 40 V Power MOSFET in PowerFLAT 5x6 package, featuring 2.1 mΩ typical R_DS(on), 120 A continuous drain current at T_C = 25 °C, and 260 mJ single-pulse avalanche energy. It employs STripFET F7 trench technology for high-efficiency switching in DC-DC converters and motor drives.

For engineers reviewing the STL160N4F7 datasheet, STL160N4F7 pinout, STL160N4F7 application, or STL160N4F7 equivalent, key selection criteria include low R_DS(on) at 10 V gate drive, Crss/Ciss ratio for EMI robustness, thermal resistance (R_thj-case = 1.35 °C/W), and avalanche ruggedness in unclamped inductive switching.

Technical Context

This device uses enhanced trench-gate STripFET F7 architecture to simultaneously minimize R_DS(on) and gate charge (Q_g = 29 nC), while achieving a low Crss/Ciss ratio of ~1.9% for reduced Miller-induced turn-off instability. Its 1.35 °C/W junction-to-case thermal resistance enables high-power density PCB mounting without heatsinks in constrained layouts.

The MOSFET supports fast switching with t_d(on) = 14 ns and t_f = 5.7 ns under 4.7 Ω gate resistance, and integrates a source-drain diode with 1.2 V forward voltage at 32 A and 55 ns reverse recovery time-critical for synchronous rectification and freewheeling in buck converters.

Key Specifications

Pinout & Package

STL160N4F7 is housed in a surface-mount PowerFLAT 5x6 type C SUBCON package with exposed drain pad on bottom side for thermal and electrical connection. The package features three solderable terminals: Drain (pins 5–8), Gate (pin 4), and Source (pins 1–3).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Compared with IPP026N04LG and NTMFS4C08NT1G, STL160N4F7 delivers superior conduction efficiency, stronger avalanche immunity, and better EMI resilience-making it optimal for space-constrained, high-reliability 40 V power stages where thermal headroom and system-level noise margins are critical.

Availability

STL160N4F7 is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial motor drives, and server VRMs requiring stable component supply across multi-year production cycles.

Supply support for STL160N4F7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

This device belongs to ST's STripFET F7 power MOSFET product line, engineered specifically for high-efficiency, high-density power conversion in 12–48 V systems where low R_DS(on), fast switching, and ruggedness are essential.

FAQ

What is the maximum continuous drain current at PCB temperature of 100 °C?

The STL160N4F7 supports 22 A continuous drain current when mounted on an FR-4 PCB at T_pcb = 100 °C, as rated per R_thj-pcb = 31.3 °C/W. This value reflects real-world board-level thermal limitations-not case-based ratings-and applies to standard 1 inch², 2 oz Cu layouts with t < 10 sec pulse conditions.

Does STL160N4F7 have integrated ESD protection on the gate?

Yes, the device includes built-in gate oxide ESD protection rated to ±20 V per the absolute maximum V_GS specification. IGSS leakage remains below 100 nA at V_GS = 20 V, confirming robust gate dielectric integrity without requiring external Zener clamps in typical gate drive configurations.

Can STL160N4F7 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (1.8× increase from –55 °C to 125 °C) ensures inherent current sharing stability. Parallel operation is validated up to four devices in high-current inverters, provided matched gate drive impedance and symmetrical PCB layout to minimize loop inductance imbalance.

What is the recommended gate resistor for 100 kHz hard-switching operation?

A 4.7 Ω gate resistor is validated in the datasheet for 100 kHz operation with t_d(on) = 14 ns and t_f = 5.7 ns. This value balances switching speed against ringing suppression; lowering below 3.3 Ω increases dv/dt-induced shoot-through risk, while raising above 10 Ω adds >120 ns delay and raises total switching loss by 23%.