STMicroelectronics STL16N65M2

Overview

STL16N65M2 from STMicroelectronics is an N-channel 650 V, 0.325 Ω typ. R_DS(on), 7.5 A Power MOSFET using MDmesh™ M2 technology in a PowerFLAT™ 5x6 HV package. It delivers low gate charge (19.5 nC), optimized C_oss profile (32 pF typ.), and 100% avalanche tested ruggedness for high-efficiency flyback and PFC converters in industrial SMPS.

For engineers reviewing the STL16N65M2 datasheet, STL16N65M2 pinout, STL16N65M2 application, or STL16N65M2 equivalent, key selection criteria include its 650 V V_(BR)DSS, 2.23 °C/W R_thj-case, Zener-protected gate, and 15 V/ns dv/dt ruggedness under defined conditions - all critical for reliable high-voltage switching design.

Technical Context

This MOSFET employs ST's MDmesh™ M2 strip layout and enhanced vertical structure to simultaneously reduce conduction loss and improve switching efficiency. Its low C_oss (32 pF) and C_rss (1.1 pF), combined with 19.5 nC total gate charge, enable fast, low-loss hard-switching at high frequencies.

The device integrates a Zener-protected gate and is 100% tested for unclamped inductive switching (UIS) up to 115 mJ single-pulse avalanche energy. Its 50 V/ns MOSFET dv/dt ruggedness (V_DS ≤ 520 V) and 15 V/ns diode recovery dv/dt rating support robust operation in noisy, high-dV/dt environments.

Key Specifications

Pinout & Package

STL16N65M2 is housed in a surface-mount PowerFLAT™ 5x6 HV package with exposed drain pad for enhanced thermal and electrical performance. The package features a thermally efficient copper leadframe and is RoHS-compliant and halogen-free per ECOPACK® specifications.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPP65R045C7 and STW20N65M5, STL16N65M2 offers optimal balance of low-profile surface-mount packaging, moderate R_DS(on), and ultra-low Q_g - making it ideal for space-constrained, medium-power SMPS where board area and driver simplicity are prioritized over absolute conduction loss or maximum current.

Availability

STL16N65M2 is available at Aetrix Electronics and suitable for industrial SMPS, server power supplies, LED drivers, and EV auxiliary converters requiring stable component supply and long-lifecycle support.

Supply support for STL16N65M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

STL16N65M2 belongs to the MDmesh™ M2 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-frequency switched-mode power supplies demanding low gate charge, rugged avalanche performance, and compact thermal packaging.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STL16N65M2 supports 4.7 A continuous drain current at T_C = 100 °C, as specified in Table 2 of the official datasheet (DocID027128 Rev 1). This derating reflects thermal limitations of the PowerFLAT™ 5x6 HV package under real-world heatsinking conditions and must be used for thermal design validation instead of the 7.5 A rating at 25 °C.

Does STL16N65M2 include integrated gate protection?

Yes - STL16N65M2 integrates a Zener diode between gate and source, clamping V_GS to approximately ±20 V. This protection is explicitly documented in the "Features" section and verified by gate leakage testing (±10 µA at ±25 V), enabling robust operation in layouts with gate loop inductance or noisy drive signals.

Can STL16N65M2 replace older MDmesh™ M1 devices like STL16N65M1?

Yes, STL16N65M2 is a direct upgrade to STL16N65M1, offering identical pinout and package but improved R_DS(on) (0.325 Ω vs. 0.38 Ω typ.), lower Q_g (19.5 nC vs. 24 nC), and enhanced C_oss profile. No layout or drive circuit changes are required, and the improvement in efficiency is measurable in PFC and LLC topologies above 60 kHz.

What is the recommended PCB footprint for thermal performance?

The recommended footprint is defined in Figure 21 of the datasheet: a 4.4 mm × 3.2 mm thermal pad (D2/E2) with solder mask defined openings and ≥1 inch² of 2 oz copper connected via ≥8 thermal vias (0.3 mm diameter, 0.8 mm pitch). This achieves the stated R_thj-pcb = 59 °C/W and prevents thermal runaway under 56 W dissipation.