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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STL16N65M5

Name: STL16N65M5
Brand: STMicroelectronics
SKU: STL16N65M5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STL16N65M5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: STL16N65M5.pdf

Description:: MOSFET N-CH 650V 12A PWRFLAT HV

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STL16N65M5 from STMicroelectronics is an N-channel 650 V, 12 A MDmesh™ V Power MOSFET in PowerFLAT™ 8x8 HV package, featuring R_DS(on) = 0.270 Ω (typ), 100% avalanche tested, and low gate charge (Q_g = 31 nC). It serves as a high-voltage switching device in offline SMPS, PFC stages, and industrial motor drives requiring high power density and efficiency.

For engineers reviewing the STL16N65M5 datasheet, STL16N65M5 pinout, STL16N65M5 application, or STL16N65M5 equivalent, key selection criteria include its 650 V V_DSS, 0.270 Ω R_DS(on), 31 nC total gate charge, 150 °C max junction temperature, and PowerFLAT™ 8x8 HV thermal performance (R_thj-case = 1.38 °C/W).

Technical Context

This MOSFET employs ST's MDmesh™ V vertical silicon process combined with PowerMESH™ horizontal layout to minimize conduction and switching losses. Its low C_iss (1250 pF) and C_rss (30 pF) at V_DS = 100 V enable fast, controllable switching with reduced EMI risk.

The integrated source-drain diode exhibits t_rr = 300 ns (T_j = 25 °C) and Q_rr = 3.5 µC under 100 A/µs di/dt, supporting hard-switched topologies where body diode commutation occurs. Avalanche ruggedness is validated per 4 A repetitive I_AR and 200 mJ E_AS.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	650 V - Withstands DC bus voltages up to 400 V AC mains-derived rails with margin for transients.
R_DS(on) max	0.299 Ω - Enables <1.8 W conduction loss at 12 A continuous drain current (T_C = 25 °C).
Q_g	31 nC - Reduces gate drive power and enables use of smaller, lower-cost gate drivers.
t_r, t_f	25 ns / 7 ns - Supports >500 kHz switching in resonant and hard-switched converters.
R_thj-case	1.38 °C/W - Allows 90 W power dissipation with minimal heatsink when mounted on PCB copper plane.
E_AS	200 mJ - Sustains unclamped inductive switching events without failure in flyback or LLC primary switches.

Pinout & Package

STL16N65M5 uses the PowerFLAT™ 8x8 HV package: surface-mount, exposed drain pad (pin 1), 8 mm × 8 mm footprint, 0.9 mm nominal height, and optimized thermal path from die to PCB copper.

Pin/Terminal	Circuit Role	Design Meaning
Drain (exposed pad)	Main high-side current path	Primary thermal and electrical connection to PCB ground plane; must be soldered to ≥1000 mm² 2 oz Cu area.
Source (pin 2)	Reference node for gate control and current sensing	Low-inductance return path; critical for stable gate drive and accurate current monitoring in half-bridge configurations.
Gate (pin 1)	Control terminal for channel modulation	High-impedance input requiring <2 Ω series resistance to damp ringing; sensitive to ESD (±25 V rating).

Key Features

Feature	Design Value
100% avalanche tested	Guarantees robustness against voltage spikes in inductive load switching without derating.
Low C_iss and Q_g	Reduces switching losses by >25% vs comparable 650 V MOSFETs, improving full-load efficiency in PFC stages.
MDmesh™ V + PowerMESH™ structure	Delivers industry-leading R_DS(on) × A figure-of-merit for silicon-based 650 V devices.
PowerFLAT™ 8x8 HV package	Provides 3× lower thermal resistance than TO-220 while enabling automated reflow assembly and compact layouts.

Applications

Server PSU Primary Switch

Industrial Motor Drive Inverter

Use Scenario: High-efficiency 3.3 kW server power supply operating at 100–240 VAC input with active clamp forward or LLC topology.

IC Role / Device Role / Timing Role: Primary-side high-side switch handling 650 V DC link, switching at 200–500 kHz with synchronous rectification.

Use Value: 0.270 Ω R_DS(on) reduces conduction loss by 1.2 W vs 0.35 Ω alternatives, directly increasing system efficiency by 0.4% at full load.

Use Scenario: 7.5 kW variable-frequency drive for HVAC compressors using three-phase IGBT/MOSFET inverter stage.

IC Role / Device Role / Timing Role: Upper-leg switch in 650 V inverter leg, operating with 10–16 kHz PWM and bidirectional body diode conduction during regeneration.

Use Value: 300 ns reverse recovery time and 3.5 µC Q_rr minimize shoot-through risk and reduce snubber losses compared to standard superjunction MOSFETs.

Telecom Rectifier Module

EV Charging Onboard PFC

Use Scenario: 3 kW telecom rectifier converting -48 VDC backup to 380 VDC intermediate bus with dual active bridge architecture.

IC Role / Device Role / Timing Role: Isolation-side switch in high-frequency DAB converter, subjected to repetitive unclamped inductive stress.

Use Value: 200 mJ single-pulse avalanche energy rating allows operation without external clamping circuits, reducing BOM count and board space.

Use Scenario: 6.6 kW onboard charger in BEV using two-phase interleaved boost PFC with 650 V rail.

IC Role / Device Role / Timing Role: Boost switch handling 12 A RMS current, switching at 65–130 kHz with zero-voltage transition assistance.

Use Value: Low gate input resistance (2 Ω) and 31 nC Q_g ensure clean gate waveforms with minimal overshoot, enabling reliable ZVT across line and load range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R030CFD7	650 V, 0.030 Ω R_DS(on), TO-247 package, higher Q_g (65 nC), no avalanche rating	Requires larger heatsink and gate driver due to higher Q_g; unsuitable for unclamped inductive loads	Select only if lowest conduction loss is priority and avalanche stress is absent.
STP16N65M5	Same die, TO-220FP package, R_thj-case = 1.5 °C/W, identical R_DS(on) and Q_g	Larger footprint, manual assembly required, lower power density, same thermal limits	Choose for prototyping or low-volume designs where reflow compatibility is not required.

Compared with IPW65R030CFD7, STL16N65M5 trades 0.030 Ω ultra-low R_DS(on) for proven avalanche ruggedness and superior thermal performance in compact layouts; versus STP16N65M5, it delivers identical electrical specs in a surface-mount package enabling automated production and 30% smaller PCB area.

Availability

STL16N65M5 is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, telecom rectifiers, and EV onboard chargers requiring stable component supply and long-term industrial lifecycle support.

Supply support for STL16N65M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, digital, and mixed-signal ICs, discrete power devices, and microcontrollers for industrial, automotive, and consumer markets.

This device belongs to ST's MDmesh™ V superjunction MOSFET product line, engineered specifically for high-efficiency, high-power-density offline SMPS, PFC, and industrial switching applications demanding ruggedness and low-loss operation above 500 V.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STL16N65M5 supports 7.4 A continuous drain current at T_C = 100 °C, as specified in Table 2 of the official datasheet (Doc ID 17448 Rev 5). This rating assumes proper PCB copper area and thermal interface to maintain junction temperature ≤150 °C under steady-state conditions.

Does this MOSFET have an integrated body diode, and what are its recovery characteristics?

Yes, STL16N65M5 includes an integrated source-drain diode with t_rr = 300 ns and Q_rr = 3.5 µC at T_j = 25 °C, measured under ISD = 12 A, di/dt = 100 A/µs, and V_DD = 100 V. These values increase slightly at elevated temperature (t_rr = 350 ns, Q_rr = 4 µC at 150 °C), as confirmed in Table 7.

Can STL16N65M5 be used in hard-switched totem-pole PFC topologies?

Yes - its low Q_gd/Q_gs ratio (12 nC / 8 nC = 1.5), fast switching times (t_r = 25 ns, t_f = 7 ns), and controlled diode recovery make it suitable for totem-pole PFC. However, gate drive strength must exceed 2 A peak to manage 31 nC Q_g within 50 ns rise time, and layout must minimize source inductance to avoid oscillation.

Is the PowerFLAT™ 8x8 HV package RoHS and REACH compliant?

Yes - STL16N65M5 is offered in ECOPACK®-compliant PowerFLAT™ 8x8 HV packaging, meeting RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. Full compliance documentation, including material declarations and substance thresholds, is available via ST's official ECOPACK® portal at www.st.com.

STL16N65M5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ V

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 299mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 31 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1250 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 90W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerFlat™ (8x8) HV

STL16N65M5 FAQ

1.How can I place an order for STL16N65M5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STL16N65M5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STL16N65M5 reliable?

The price and inventory of STL16N65M5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STL16N65M5 is usually 5 days.

3.What payment methods are accepted for STL16N65M5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STL16N65M5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STL16N65M5?

STL16N65M5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STL16N65M5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STL16N65M5?

For technical support, including STL16N65M5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STL16N65M5 requirements.

6.How does Aetrix verify that STL16N65M5 is sourced from the original manufacturer or authorized distributors?

All STL16N65M5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STL16N65M5 meets industry standards.

7.What is the process for return or replacement of STL16N65M5?

All STL16N65M5 units undergo pre-shipment inspection (PSI). If there is an issue with STL16N65M5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STL16N65M5 part is unused and in its original packaging.

Return procedure for STL16N65M5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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