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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STL17N60M6

Name: STL17N60M6
Brand: STMicroelectronics
SKU: STL17N60M6
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STL17N60M6

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: STL17N60M6.pdf

Description:: MOSFET N-CH 600V 10A PWRFLAT HV

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Product details

Overview

STL17N60M6 from STMicroelectronics is an N-channel 600 V, 350 mΩ (max), 10 A MDmesh™ M6 superjunction power MOSFET in PowerFLAT™ 8x8 HV package, optimized for high-efficiency switching in LLC and boost PFC converters with 100% avalanche testing and Zener-protected gate.

For engineers reviewing the STL17N60M6 datasheet, STL17N60M6 pinout, STL17N60M6 application, or STL17N60M6 equivalent, key selection criteria include R_DS(on) typ. (300 mΩ), Q_g (16.7 nC), E_AS (110 mJ), dv/dt ruggedness (100 V/ns), and thermal resistance R_thj-case (1.4 °C/W).

Technical Context

This MOSFET employs ST's MDmesh™ M6 silicon technology, delivering improved R_DS(on)/area over prior generations while maintaining low gate input resistance (5.2 Ω) and robust 100% unclamped inductive switching capability up to 2.5 A avalanche current.

Its dynamic performance is characterized by low C_iss (575 pF), C_oss (33 pF), and Cr_ss (3 pF), enabling fast switching with td(on) = 13 ns and tf = 6.8 ns under 4.7 Ω gate drive, supporting high-frequency operation in resonant topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Withstands DC bus voltages up to 480 V in continuous operation with 20% margin for transients.
R_DS(on) max	350 mΩ at 10 V V_GS, 25 °C - Enables low conduction loss in 10 A continuous switching applications.
Q_g	16.7 nC - Low total gate charge reduces driver power requirement and improves switching efficiency.
E_AS	110 mJ - Confirmed single-pulse avalanche energy supports reliable operation under inductive fault conditions.
R_thj-case	1.4 °C/W - Enables 90 W dissipation at T_case = 25 °C, critical for thermally constrained surface-mount designs.
dv/dt ruggedness	100 V/ns - Ensures immunity to parasitic turn-on during high-speed voltage transitions in hard-switched circuits.

Pinout & Package

Package: PowerFLAT™ 8x8 HV - Exposed drain pad (top-side thermal interface), 5-pin surface-mount package with enhanced thermal performance (R_thj-pcb = 50 °C/W on 1 in² FR-4 board).

Pin/Terminal	Circuit Role	Design Meaning
Drain (5)	Main power output terminal	Connected to exposed copper pad; primary thermal path and high-voltage switching node.
Gate (1)	Control input	Low 5.2 Ω intrinsic gate resistance enables fast, low-loss switching with standard gate drivers.
Driver source (2)	Reference for gate drive	Separate Kelvin source connection minimizes source inductance impact on switching waveforms.
Power source (3, 4)	Main current return path	Dual-source pins reduce conduction resistance and improve current sharing in high-ID layouts.

Key Features

Feature	Design Value
MDmesh™ M6 silicon technology	300 mΩ typ. R_DS(on) at 10 V V_GS - Delivers higher power density vs previous MDmesh generations.
100% avalanche tested	2.5 A repetitive I_AR, 110 mJ E_AS - Guarantees ruggedness in unclamped inductive load conditions.
Zener-protected gate	±25 V V_GS rating - Prevents gate oxide damage during handling and transient events.
Low C_oss and Cr_ss	33 pF C_oss, 3 pF Cr_ss - Reduces switching losses and improves zero-voltage switching (ZVS) behavior in LLC.

Applications

LLC Resonant Converter

Boost PFC Stage

Use Scenario: Primary-side switch in 300–500 W server PSU LLC half-bridge with 300–400 kHz switching frequency.

IC Role / Device Role / Timing Role: High-side/low-side synchronous switching device with ZVS capability enabled by low C_oss (33 pF) and Cr_ss (3 pF).

Use Value: Achieves >96% efficiency at full load due to combined low R_DS(on) (300 mΩ typ.) and reduced switching losses (Q_g = 16.7 nC).

Use Scenario: Active switch in continuous conduction mode (CCM) boost PFC front-end for industrial AC-DC supplies.

IC Role / Device Role / Timing Role: Main power switch handling 10 A RMS input current with 600 V blocking capability.

Use Value: Supports high power factor (>0.99) and low THD via fast, low-loss switching (tr = 7.6 ns, tf = 6.8 ns) and 100 V/ns dv/dt ruggedness.

Industrial Motor Drive Inverter

Telecom Rectifier Module

Use Scenario: Upper-leg switch in three-phase 400 VAC inverter driving 2–3 kW induction motors.

IC Role / Device Role / Timing Role: High-voltage, high-current switching element requiring avalanche robustness during motor stall or short-circuit events.

Use Value: Survives repeated 2.5 A avalanche current pulses (E_AS = 110 mJ) without degradation, ensuring long-term reliability.

Use Scenario: Primary switch in 48 V telecom rectifier with universal AC input (90–264 VAC) and active clamp forward topology.

IC Role / Device Role / Timing Role: Main switching transistor operating at 100–200 kHz with tight thermal constraints on PCB.

Use Value: Leverages 1.4 °C/W R_thj-case and exposed drain pad to maintain T_j < 125 °C under 90 W dissipation, eliminating need for heatsink.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW60R041P7XKSA1	650 V, 41 mΩ typ., TO-247 package, higher R_DS(on) density but larger footprint and higher R_thj-case (0.55 °C/W)	Requires heatsink; unsuitable for space-constrained SMT-only designs	Select when higher current (17 A) and lower R_DS(on) outweigh thermal and layout constraints.
STP17N60M2	600 V, 380 mΩ max., TO-220FP package, MDmesh™ M2 generation, no Zener gate protection	Limited to lower-frequency (<100 kHz) hard-switched applications due to higher Q_g (32 nC)	Choose only for cost-sensitive legacy designs where avalanche testing and dv/dt ruggedness are non-critical.

Compared with IPW60R041P7XKSA1 and STP17N60M2, STL17N60M6 offers optimal balance of SMT compatibility, 1.4 °C/W thermal resistance, Zener gate protection, and 100 V/ns dv/dt ruggedness-making it uniquely suited for high-density, high-reliability 200–500 kHz resonant converters.

Availability

STL17N60M6 is available at Aetrix Electronics and suitable for LLC resonant converters, boost PFC stages, and industrial motor drive inverters requiring stable component supply, consistent parametric performance, and long-term production continuity.

Supply support for STL17N60M6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to the MDmesh™ M6 superjunction MOSFET product line, engineered specifically for high-efficiency, high-frequency AC-DC and DC-DC conversion in compact, thermally demanding power supplies.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STL17N60M6 supports 6.3 A continuous drain current at T_case = 100 °C, as specified in Table 1 of DS12921. This derating reflects thermal limits of the PowerFLAT™ 8x8 HV package and ensures safe operation within SOA boundaries at elevated temperatures.

Does this MOSFET require a negative gate turn-off voltage?

No. The STL17N60M6 has a gate threshold voltage range of 3.25–4.75 V and is fully compatible with 0 V to +10 V or +12 V gate drive. Its ±25 V V_GS rating allows optional negative turn-off (e.g., –5 V) to improve noise immunity, but it is not required for normal operation.

Is the source-drain diode suitable for synchronous rectification?

No. The body diode has trr = 210–290 ns and Q_rr = 1.7–2.9 µC, making it unsuitable for synchronous rectification. It is designed for freewheeling in hard-switched topologies-not for high-frequency reverse recovery-critical roles like SR FETs.

How is the "Driver source" pin (2) different from "Power source" pins (3, 4)?

Pin 2 is a dedicated Kelvin source connection for gate driver reference, minimizing voltage drop and inductance in the gate loop. Pins 3 and 4 carry main source current and connect directly to PCB ground planes-ensuring low-resistance current return while isolating control and power paths.

STL17N60M6 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ M6

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 10A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 350mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 4.75V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 16.7 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 575 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 90W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerFlat™ (8x8) HV

STL17N60M6 FAQ

1.How can I place an order for STL17N60M6 through Aetrix?

Please submit a Request for Quotation (RFQ) for STL17N60M6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STL17N60M6 reliable?

The price and inventory of STL17N60M6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STL17N60M6 is usually 5 days.

3.What payment methods are accepted for STL17N60M6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STL17N60M6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STL17N60M6?

STL17N60M6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STL17N60M6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STL17N60M6?

For technical support, including STL17N60M6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STL17N60M6 requirements.

6.How does Aetrix verify that STL17N60M6 is sourced from the original manufacturer or authorized distributors?

All STL17N60M6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STL17N60M6 meets industry standards.

7.What is the process for return or replacement of STL17N60M6?

All STL17N60M6 units undergo pre-shipment inspection (PSI). If there is an issue with STL17N60M6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STL17N60M6 part is unused and in its original packaging.

Return procedure for STL17N60M6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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