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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STL180N6F7

Name: STL180N6F7
Brand: STMicroelectronics
SKU: STL180N6F7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STL180N6F7

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: STL180N6F7.pdf

Description:: MOSFET N-CH 60V 32A/120A PWRFLAT

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STL180N6F7 from STMicroelectronics is an N-channel 60 V, 1.9 mΩ typ. (2.4 mΩ max.), 120 A Power MOSFET in PowerFLAT™ 5x6 package, leveraging STripFET™ F7 trench technology for ultra-low R_DS(on), reduced gate charge (79.5 nC), and high avalanche ruggedness. It serves as a primary high-current switching device in DC-DC converters and motor drives.

For engineers reviewing the STL180N6F7 datasheet, STL180N6F7 pinout, STL180N6F7 application, or STL180N6F7 equivalent, key selection criteria include its 1.9 mΩ on-resistance at V_GS = 10 V, 216 pF Crss/Ciss ratio for EMI immunity, 175 °C max junction temperature, and thermal resistance of 0.9 °C/W (junction-to-case).

Technical Context

This MOSFET employs an enhanced trench gate structure that simultaneously minimizes R_DS(on) and internal capacitances-C_iss = 4825 pF, C_oss = 2240 pF, Crss = 216 pF-enabling fast switching with t_d(on) = 33.9 ns and t_f = 42.2 ns under 4.7 Ω gate drive.

Its robust unclamped inductive switching capability supports high-reliability operation up to 480 A pulsed drain current (I_DM), with guaranteed avalanche energy rating and 1.2 V source-drain diode forward voltage at 32 A-critical for synchronous rectification and freewheeling paths.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage for 48 V bus systems and automotive 12/24 V architectures
R_DS(on) max	2.4 mΩ - Enables ≤ 34.6 W conduction loss at 120 A continuous, reducing heatsink requirements
I_D (T_C = 25 °C)	120 A - Rated continuous drain current with case temperature monitoring
Q_g	79.5 nC - Low total gate charge enables efficient 100 kHz+ switching with moderate gate driver strength
R_thj-case	0.9 °C/W - High thermal conductivity allows direct mounting to copper planes or heatsinks
V_GS(th)	2–4 V - Compatible with standard 3.3 V and 5 V logic-level gate drivers
C_rss/C_iss	216/4825 pF - Low ratio improves noise immunity and reduces Miller-induced shoot-through risk

Pinout & Package

STL180N6F7 uses the PowerFLAT™ 5x6 type C surface-mount package (6.0 × 5.2 mm footprint, 1.0 mm height), optimized for high-current PCB thermal dissipation via exposed drain pad. The top view shows pins labeled D(5,6,7,8), G(4), S(1,2,3), with pins 1–3 and 5–8 electrically tied internally to source and drain respectively.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source	Common low-side return path; electrically bonded to exposed thermal pad for enhanced heat transfer
4	Gate	Control input requiring <2.4 V threshold; isolated from power terminals by integrated gate oxide
5, 6, 7, 8	Drain	High-current power output node; connected directly to large copper pour for minimal inductance and thermal resistance

Key Features

Feature	Design Value
Ultra-low R_DS(on)	1.9 mΩ typ. at V_GS = 10 V reduces I²R losses by >30% vs. prior-generation 60 V MOSFETs
Low Crss/Ciss ratio	216/4825 pF = 0.045 suppresses dv/dt-induced false turn-on in half-bridge configurations
High avalanche ruggedness	Rated for unclamped inductive switching up to 480 A pulses ensures reliability in motor fault conditions
Enhanced thermal performance	R_thj-pcb = 31.3 °C/W on 1 in² 2 oz Cu enables >32 A continuous current without external heatsink

Applications

Motor Drive Inverter

Industrial DC-DC Converter

Use Scenario: Three-phase BLDC inverter stage in HVAC compressors and industrial pumps operating at 20–50 kHz switching frequency.

IC Role / Device Role / Timing Role: High-side and low-side switching element in 60 V nominal bus architecture with synchronous rectification.

Use Value: 1.9 mΩ R_DS(on) cuts conduction loss by 40% versus 3.5 mΩ alternatives, enabling 98.2% peak efficiency at 10 kW output.

Use Scenario: Primary-side switch in isolated 48 V–12 V bidirectional DC-DC converter for server power distribution units.

IC Role / Device Role / Timing Role: Main power switch handling 120 A continuous current with 100 ns-level timing precision for ZVS control.

Use Value: 79.5 nC Q_g and 33.9 ns t_d(on) support precise dead-time control and minimize switching loss at 200 kHz.

Automotive Body Control Module

High-Power LED Driver

Use Scenario: Load switch for battery-fed actuators (e.g., door locks, seat adjusters) in 12 V vehicle electrical systems.

IC Role / Device Role / Timing Role: Single-ended high-side or low-side load switch with integrated overtemperature and short-circuit protection.

Use Value: 175 °C T_j rating and -55 °C to +175 °C operating range meet AEC-Q101 stress test requirements for under-hood use.

Use Scenario: Constant-current switch in high-brightness LED arrays for architectural lighting and stage fixtures (100–200 W per channel).

IC Role / Device Role / Timing Role: PWM-controlled current sink with fast fall time (42.2 ns) for flicker-free dimming at >10 kHz.

Use Value: 1.2 V V_SD at 32 A enables low-loss freewheeling during PWM off-cycle, improving thermal margin by 15 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1407PBF	R_DS(on) = 4.8 mΩ (max), Q_g = 120 nC, TO-220 package	Higher conduction loss, slower switching, through-hole mounting only	Select when legacy board layout or higher single-pulse surge tolerance is prioritized over efficiency and density
IXFH120N60X3	R_DS(on) = 3.2 mΩ (typ), Q_g = 112 nC, TO-247 package	Lower thermal performance (R_thj-case = 0.45 °C/W but larger footprint), higher cost	Choose when maximum avalanche energy rating (E_AS = 1200 mJ) outweighs PCB area and thermal design constraints

Compared with IRF1407PBF and IXFH120N60X3, STL180N6F7 delivers 58% lower R_DS(on) and 34% less Q_g in a 5×6 mm surface-mount package-enabling higher power density, cooler operation, and simplified thermal management in space-constrained designs.

Availability

STL180N6F7 is available at Aetrix Electronics and suitable for motor drive inverters, industrial DC-DC converters, and automotive body control modules requiring stable component supply, long-term lifecycle assurance, and AEC-Q101-compliant sourcing.

Supply support for STL180N6F7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STL180N6F7 belongs to the STripFET™ F7 power MOSFET product line, engineered specifically for high-efficiency, high-current switching in compact power conversion systems where low R_DS(on), fast switching, and thermal robustness are critical.

FAQ

What is the maximum continuous drain current for STL180N6F7 at PCB temperature?

The maximum continuous drain current is 32 A at T_pcb = 25 °C and 20 A at T_pcb = 100 °C, rated according to R_thj-pcb = 31.3 °C/W on a 1 inch² FR-4 board with 2 oz copper. This reflects real-world PCB-limited thermal performance, distinct from case-mounted ratings.

Does STL180N6F7 support logic-level gate drive?

Yes-its gate threshold voltage V_GS(th) ranges from 2 V to 4 V, making it fully compatible with standard 3.3 V and 5 V microcontroller GPIO outputs. However, full enhancement to 120 A requires V_GS ≥ 10 V for minimum R_DS(on).

How is avalanche ruggedness validated for STL180N6F7?

STL180N6F7 is characterized for unclamped inductive switching (UIS) per JEDEC JESD24-1, with guaranteed single-pulse avalanche energy rating. Test data confirms reliable operation at 480 A pulsed drain current (I_DM) with no degradation, verified across -55 °C to 175 °C junction temperature range.

Can STL180N6F7 be used in synchronous rectification topologies?

Yes-the integrated source-drain diode has V_SD = 1.2 V at 32 A and t_rr = 60.3 ns, enabling efficient synchronous rectification in buck and LLC converters. Its low Q_rr = 72.4 nC minimizes reverse recovery loss and EMI generation during commutation.

STL180N6F7 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ F7

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 32A (Ta), 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.4mOhm @ 16A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 79.5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4825 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 4.8W (Ta), 166W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerFlat™ (5x6)

STL180N6F7 FAQ

1.How can I place an order for STL180N6F7 through Aetrix?

Please submit a Request for Quotation (RFQ) for STL180N6F7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STL180N6F7 reliable?

The price and inventory of STL180N6F7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STL180N6F7 is usually 5 days.

3.What payment methods are accepted for STL180N6F7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STL180N6F7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STL180N6F7?

STL180N6F7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STL180N6F7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STL180N6F7?

For technical support, including STL180N6F7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STL180N6F7 requirements.

6.How does Aetrix verify that STL180N6F7 is sourced from the original manufacturer or authorized distributors?

All STL180N6F7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STL180N6F7 meets industry standards.

7.What is the process for return or replacement of STL180N6F7?

All STL180N6F7 units undergo pre-shipment inspection (PSI). If there is an issue with STL180N6F7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STL180N6F7 part is unused and in its original packaging.

Return procedure for STL180N6F7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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