STMicroelectronics STL18N60M2

Overview

STL18N60M2 from STMicroelectronics is an N-channel 600 V, 9 A Power MOSFET in PowerFLAT™ 5x6 HV package, featuring 0.278 Ω typ. R_DS(on), 21.5 nC total gate charge, and 100% avalanche tested. It serves as a high-voltage switching device in offline SMPS primary-side power stages, delivering low conduction loss and fast switching in 65–100 kHz flyback and LLC resonant converters.

For engineers reviewing the STL18N60M2 datasheet, STL18N60M2 pinout, STL18N60M2 application, or STL18N60M2 equivalent, key selection criteria include its 600 V V_(BR)DSS, 2.2 °C/W R_thj-case, Zener-protected gate, optimized C_oss profile for soft-switching, and rugged dv/dt capability up to 50 V/ns.

Technical Context

This MDmesh™ M2 technology MOSFET uses a strip layout and enhanced vertical structure to simultaneously reduce R_DS(on) and output capacitance. Its 40 pF C_oss and 164.5 pF C_{oss_eq} enable efficient zero-voltage switching in resonant topologies.

The device integrates a robust body diode with 305 ns trr (T_j = 25 °C) and 4.6 µC Q_rr at 150 °C, supporting continuous conduction mode operation in PFC boost stages. Gate threshold voltage is tightly specified at 2–4 V, ensuring stable turn-on under wide temperature and drive conditions.

Key Specifications

Pinout & Package

STL18N60M2 is housed in a surface-mount PowerFLAT™ 5x6 HV package with exposed drain pad for enhanced thermal performance. The package features 8 terminals: pins 1–3 and 5–8 are source-connected, pin 4 is gate, and pins 5–8 collectively form the high-voltage drain terminal.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPP60R190C6 and STP18N60M2, STL18N60M2 delivers superior power density (5x6 mm² footprint), lowest thermal resistance to PCB (59 °C/W), and best balance of R_DS(on) and Q_g for compact, high-frequency offline converters.

Availability

STL18N60M2 is available at Aetrix Electronics and suitable for industrial flyback SMPS, LLC resonant converters, PFC boost stages, and HV DC motor drives requiring stable component supply and long-term production continuity.

Supply support for STL18N60M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

The MDmesh™ M2 product line targets high-efficiency AC–DC and DC–DC conversion, emphasizing low R_DS(on), fast switching, and avalanche ruggedness for next-generation power supplies and motor controls.

FAQ

What is the maximum continuous drain current at case temperature of 100 °C?

The STL18N60M2 supports 5.5 A continuous drain current at T_C = 100 °C, as defined by its safe operating area and package thermal limits. This value is lower than the 9 A rating at T_C = 25 °C due to junction-to-case thermal resistance (2.2 °C/W) and power dissipation constraints. Derating follows the SOA curve in Figure 2 of the datasheet, and operation above this current requires active cooling or reduced duty cycle.

Does the integrated Zener protection cover both positive and negative gate transients?

Yes - the internal gate-body Zener diode provides bidirectional protection, clamping gate-source voltage to ±25 V absolute maximum. This covers both positive overvoltage (e.g., Miller-induced spikes) and negative transients (e.g., shoot-through induced reverse bias), eliminating the need for external gate protection components in most industrial applications.

Can STL18N60M2 replace STP18N60M2 in an existing TO-220 design without circuit modification?

No - while electrically identical, the STL18N60M2 uses a surface-mount PowerFLAT™ 5x6 HV package with different pinout, thermal path, and layout requirements. Direct replacement would require PCB redesign, new gate drive routing, and revised thermal pad implementation. It is not a drop-in substitute but a high-density upgrade path for new designs.

What is the recommended minimum PCB copper area for optimal thermal performance?

For optimal thermal performance, ST recommends a 1 inch² (2.54 cm²) FR-4 PCB area with 2 oz copper connected to the exposed drain pad. This achieves the published R_thj-pcb of 59 °C/W. Smaller copper areas increase thermal resistance linearly; halving the area raises R_thj-pcb to ~95 °C/W, limiting usable current to ~6.5 A at T_C = 25 °C.