STMicroelectronics STL19N60DM2

Overview

STL19N60DM2 from STMicroelectronics is an N-channel 600 V, 11 A Power MOSFET in PowerFLAT™ 8x8 HV package, featuring 0.280 Ω typ. R_DS(on), fast-recovery body diode (t_rr = 120 ns), and 40 V/ns diode dv/dt ruggedness. It is engineered for high-efficiency bridge topologies and ZVS phase-shift converters.

For engineers reviewing the STL19N60DM2 datasheet, STL19N60DM2 pinout, STL19N60DM2 application, or STL19N60DM2 equivalent, key selection criteria include R_DS(on) at 10 V gate drive, Q_g = 21 nC, avalanche-rated operation, Zener-protected gate, and thermal resistance R_thj-case = 1.39 °C/W.

Technical Context

This MDmesh™ DM2 device integrates a fast-recovery body diode with low Q_rr and t_rr, enabling reduced switching losses in hard-switched and resonant topologies. Its 600 V V_(BR)DSS and 150 °C T_j(max) support operation in high-voltage industrial SMPS and solar inverters.

The PowerFLAT™ 8x8 HV package delivers low thermal resistance (1.39 °C/W junction-to-case) and enhanced power density versus TO-220/TO-247. Gate threshold voltage (3–5 V) and ±25 V V_GS rating ensure robust control interface compatibility with standard gate drivers.

Key Specifications

Pinout & Package

PowerFLAT™ 8x8 HV is a surface-mount, thermally enhanced package with exposed drain pad on bottom side for direct PCB thermal coupling. It features three terminals: Drain (D), Gate (G), Source (S).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IXTH11N60L2 and IPP60R190C7, STL19N60DM2 uniquely balances low R_DS(on), fast diode recovery, Zener gate protection, and surface-mount thermal performance-making it optimal for space-constrained, high-frequency, high-reliability bridge converters.

Availability

STL19N60DM2 is available at Aetrix Electronics and suitable for industrial SMPS, solar inverters, motor drives, and UPS systems requiring stable component supply and long-term production continuity.

Supply support for STL19N60DM2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

The MDmesh™ DM2 series targets high-efficiency, high-voltage power conversion, emphasizing fast diode recovery, low gate charge, and avalanche ruggedness for next-generation SMPS and renewable energy systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STL19N60DM2 supports 6.8 A continuous drain current at T_C = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limits of the PowerFLAT™ 8x8 HV package and ensures safe operation within its 1.39 °C/W R_thj-case constraint under sustained load.

Does this MOSFET require external gate protection?

No. The STL19N60DM2 integrates back-to-back Zener diodes across the gate-source terminals, rated for ±25 V, eliminating the need for external gate clamping components in standard 10 V gate drive applications.

Can STL19N60DM2 replace older MDmesh™ D2 devices in existing designs?

Yes, with verification. STL19N60DM2 offers lower R_DS(on) (0.280 Ω vs. 0.330 Ω typ. for STL19N60D2) and improved diode recovery (120 ns vs. 250 ns), but shares identical PowerFLAT™ 8x8 HV footprint and pinout-enabling drop-in upgrade in most cases.

What is the recommended PCB footprint for thermal performance?

The manufacturer specifies a recommended footprint per Figure 9: 7.05–7.30 mm × 4.15–4.40 mm solder mask opening for the source-drain thermal pad, with ≥2 oz copper and thermal vias to internal ground planes to achieve R_thj-amb ≤ 25 °C/W in optimized layouts.