STMicroelectronics STL19N60M2

Overview

STL19N60M2 from STMicroelectronics is an N-channel 600 V, 0.308 Ω max, 11 A Power MOSFET in PowerFLAT 8x8 HV package, built on MDmesh M2 technology with strip layout and optimized vertical structure. It delivers low gate charge (21.5 nC), low COSS (40 pF typ.), and 100% avalanche tested ruggedness for high-efficiency hard-switched PFC and SMPS primary-side switching.

For engineers reviewing the STL19N60M2 datasheet, STL19N60M2 pinout, STL19N60M2 application, or STL19N60M2 equivalent, key selection criteria include RDS(on) stability over temperature, dv/dt ruggedness (50 V/ns), unclamped inductive switching capability (EAS = 135 mJ), and thermal resistance (Rthj-case = 1.39 °C/W) in high-power density board designs.

Technical Context

This device operates as a high-voltage power switch in continuous conduction mode (CCM) and transition-mode (TM) topologies. Its MDmesh M2 process enables low RDS(on) × Qg figure-of-merit (0.308 Ω × 21.5 nC ≈ 6.62 Ω·nC) and excellent COSS linearity up to 480 V, critical for ZVS-assisted resonant converters.

The integrated Zener-protected gate ensures robustness against transient overvoltage during fast switching. The source-drain diode exhibits trr = 305 ns at TJ = 25 °C and Qrr = 3.3 µC, enabling reliable operation in bridge configurations without external anti-parallel diodes in moderate-frequency applications.

Key Specifications

Pinout & Package

STL19N60M2 uses the PowerFLAT 8x8 HV package: thermally enhanced exposed drain pad (8 mm × 8 mm footprint), 5-terminal surface-mount construction with dual source pins for current sharing and reduced source inductance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPP60R190C7 and STW48N60M2, STL19N60M2 offers optimal balance of low-profile SMT integration, gate protection, and mid-range current capability-ideal for space-constrained 10–15 A PFC stages where thermal management relies on PCB copper rather than heatsinks.

Availability

STL19N60M2 is available at Aetrix Electronics and suitable for server PSUs, industrial AC-DC converters, solar microinverters, and EV onboard charger stages requiring stable component supply and long-term production continuity.

Supply support for STL19N60M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MEMS, power, and microcontroller solutions for industrial, automotive, and consumer markets.

This device belongs to ST's MDmesh™ M2 high-voltage MOSFET product line, engineered specifically for high-efficiency, high-power-density switched-mode power supplies operating above 300 V DC input.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The maximum continuous drain current ID at TC = 100 °C is 6.9 A, as specified in Table 1 of DS11488 Rev 3. This derating reflects thermal limits of the PowerFLAT 8x8 HV package and ensures safe operation within SOA boundaries at elevated ambient temperatures without forced cooling.

Does STL19N60M2 include an integrated body diode, and what are its recovery characteristics?

Yes, STL19N60M2 features an integrated source-drain diode with trr = 305 ns and Qrr = 3.3 µC at TJ = 25 °C, ISD = 13 A, and di/dt = 100 A/µs. These values increase to trr = 417 ns and Qrr = 4.6 µC at TJ = 150 °C, indicating predictable, temperature-stable recovery behavior suitable for synchronous rectification in certain topologies.

Can STL19N60M2 be used in avalanche mode, and what is its rated single-pulse energy?

Yes, STL19N60M2 is 100% tested for single-pulse avalanche with EAS = 135 mJ at TJ = 25 °C, VDD = 50 V, and ID = 3 A. This rating applies to unclamped inductive switching events and confirms ruggedness for fault-tolerant designs, though repetitive avalanche is not guaranteed per datasheet limitations.

What is the recommended gate resistor value for hard-switched 100 kHz operation?

A gate resistor of 4.7 Ω is validated in the datasheet (Table 6) for 100 kHz-class hard switching with VDD = 300 V and ID = 6.5 A. This value balances switching speed (td(on) = 12 ns, tf = 10.6 ns) against gate oscillation risk and driver power dissipation, especially when paired with the device's intrinsic RG = 5.6 Ω.