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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STL19N60M6

Name: STL19N60M6
Brand: STMicroelectronics
SKU: STL19N60M6
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STL19N60M6

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: STL19N60M6.pdf

Description:: MOSFET N-CH 600V 11A PWRFLAT HV

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STL19N60M6 from STMicroelectronics is an N-channel 600 V, 308 mΩ (max), 11 A MDmesh M6 superjunction MOSFET in PowerFLAT 8x8 HV package, optimized for high-efficiency LLC and boost PFC converters with low switching losses and Zener-protected body diode.

For engineers reviewing the STL19N60M6 datasheet, STL19N60M6 pinout, STL19N60M6 application, or STL19N60M6 equivalent, this device supports high-voltage DC-DC conversion where dv/dt ruggedness (100 V/ns), 100% avalanche testing, and low gate input resistance are critical for reliability in resonant topologies.

Technical Context

This MOSFET employs ST's MDmesh M6 technology, delivering 255 mΩ typ. R_DS(on) at V_GS = 10 V and ID = 6.5 A, with C_iss = 650 pF and Q_g = 16.8 nC - enabling fast, low-loss switching in hard- and soft-switched SMPS.

Its PowerFLAT 8x8 HV package provides 1.39 °C/W junction-to-case thermal resistance and supports high-current source-drain conduction (I_SD = 11 A), while built-in Zener protection safeguards gate integrity during transient overvoltage events.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports primary-side switching in 400 V DC bus applications up to full breakdown margin.
R_DS(on) max	308 mΩ - ensures ≤ 3.5 W conduction loss at 11 A continuous drain current (T_C = 25 °C).
I_D cont	11 A - rated for sustained operation in high-power PFC stages with adequate heatsinking.
Q_g	16.8 nC - enables efficient gate drive with standard 10 V logic-level controllers and low driver power dissipation.
dv/dt ruggedness	100 V/ns - withstands rapid voltage transients in LLC resonant circuits without spurious turn-on.
E_AS	210 mJ - provides robust unclamped inductive switching capability for flyback and forward converter designs.
R_thj-case	1.39 °C/W - allows direct mounting to copper pads for high-power density layouts without external heatsink.

Pinout & Package

PowerFLAT 8x8 HV is a surface-mount, thermally enhanced package with exposed drain pad on bottom side for PCB heat sinking. Dimensions: 8.0 × 8.0 × 0.85 mm (L × W × H), 7-pin configuration (pins 1–5 + dual-source terminals).

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	High-impedance control input; low gate input resistance minimizes driver power and improves noise immunity.
2	Driver Source	Source connection for gate driver return path; separates signal ground from power ground to reduce coupling noise.
3, 4	Power Source	Parallel source terminals carrying main load current; reduces trace inductance and conduction loss in high-current paths.
5	Drain	Exposed metal pad on underside - electrically and thermally connected to drain; must be soldered to large copper pour for thermal management.

Key Features

Feature	Design Value
MDmesh M6 technology	Delivers 255 mΩ typ. R_DS(on) per die area - 20% lower than prior-generation M5 devices at same voltage rating.
Zener-protected gate	Integrated gate-body Zener clamps V_GS to ±25 V - eliminates need for external gate protection in industrial environments.
100% avalanche tested	Each unit validated for single-pulse E_AS ≥ 210 mJ - guarantees ruggedness in unclamped inductive switching conditions.
Low C_oss eq.	123 pF equivalent output capacitance (0–480 V) - reduces capacitive switching loss and improves light-load efficiency in resonant converters.
Fast diode recovery	t_rr = 208 ns (T_J = 25 °C); Q_rr = 1.9 µC - minimizes reverse recovery loss and EMI in synchronous rectification and PFC stages.

Applications

LLC Resonant Converter

Boost PFC Stage

Use Scenario: Primary-side switch in 300–500 W server PSU LLC half-bridge stage operating at 200–500 kHz.

IC Role / Device Role / Timing Role: High-voltage switching element controlling energy transfer via resonant tank; requires precise dv/dt immunity and low Q_g.

Use Value: 100 V/ns dv/dt ruggedness prevents false turn-on during zero-voltage switching transitions, improving system stability.

Use Scenario: Active switch in continuous conduction mode (CCM) boost PFC front-end for industrial AC-DC supplies (230 V AC input).

IC Role / Device Role / Timing Role: Main power switch modulated at 65–100 kHz to shape input current waveform; demands low R_DS(on) and fast diode recovery.

Use Value: 1.6 V V_SD at 11 A and 1.9 µC Q_rr reduce conduction and recovery losses, enabling >98% PFC efficiency.

Solar Microinverter DC-DC Stage

Industrial Motor Drive Inverter

Use Scenario: DC-DC isolation stage in string-level solar microinverters converting 30–60 V PV input to 400 V DC link.

IC Role / Device Role / Timing Role: High-side switch in phase-shifted full-bridge topology; requires high avalanche energy rating and thermal robustness.

Use Value: 210 mJ E_AS and 150 °C T_J max support reliable operation under partial shading-induced fault conditions.

Use Scenario: Upper-leg IGBT replacement in 3-phase inverter drives for HVAC compressors (≤5 kW).

IC Role / Device Role / Timing Role: Fast-switching high-voltage switch in motor phase leg; benefits from low switching losses and integrated body diode.

Use Value: 16 ns t_d(on) and 9 ns t_f enable higher PWM frequencies (>20 kHz), reducing audible noise and filter size.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP60R099C7XKSA1	650 V, 99 mΩ typ., TO-220FP package; higher R_DS(on) density but larger footprint and 2.5× higher R_thj-case (3.5 °C/W).	Requires bolt-down heatsink; unsuitable for ultra-thin or high-density layouts where PowerFLAT 8x8 HV fits.	Select when board space permits and discrete heatsinking is preferred over PCB thermal spreading.
STP19N60DM6	Same MDmesh M6 die, but TO-220 package; identical electrical specs except R_thj-case = 0.85 °C/W and no Zener gate protection.	Lacks integrated gate Zener; needs external clamping in noisy industrial environments.	Choose only if mechanical mounting constraints favor through-hole and gate protection is added externally.

Compared with IPP60R099C7XKSA1 and STP19N60DM6, STL19N60M6 uniquely combines Zener-protected gate integrity, 1.39 °C/W thermal resistance in a compact surface-mount form, and 100% avalanche screening - making it optimal for space-constrained, high-reliability PFC and resonant converter designs.

Availability

STL19N60M6 is available at Aetrix Electronics and suitable for LLC resonant converters, boost PFC stages, and solar microinverter DC-DC stages requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STL19N60M6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, power, MCU, and sensor solutions for automotive, industrial, and consumer markets.

This device belongs to the MDmesh M6 superjunction MOSFET product line, engineered specifically for high-efficiency, high-frequency switched-mode power supplies where low R_DS(on), fast switching, and avalanche ruggedness are essential.

FAQ

What is the maximum allowable gate-source voltage for STL19N60M6?

The absolute maximum V_GS is ±25 V, as specified in Table 1 of DS13180. Operation beyond this range risks permanent gate oxide damage. The integrated Zener diode clamps V_GS to ±25 V, eliminating need for external gate protection in most applications.

Can STL19N60M6 replace older MDmesh M2 or M5 devices in existing designs?

Yes - STL19N60M6 offers lower R_DS(on) (255 mΩ typ. vs. 340–390 mΩ for M5), improved dv/dt ruggedness (100 V/ns vs. 75 V/ns), and Zener gate protection not present in M2/M5. Pin-compatible in PowerFLAT 8x8 HV, but layout review for thermal pad soldering and gate drive loop inductance is recommended.

What is the significance of C_oss eq. = 123 pF in practical design?

C_oss eq. represents the effective output capacitance across 0–480 V, directly impacting turn-off loss and ZVS behavior. At 123 pF, this MOSFET achieves faster voltage rise time and lower stored energy (E_OSS ≈ 14 µJ at 400 V) than predecessors - critical for optimizing LLC resonant tank efficiency and reducing EMI.

Is the body diode suitable for synchronous rectification in PFC applications?

The body diode has t_rr = 208 ns and Q_rr = 1.9 µC at 25 °C, which is competitive for CCM boost PFC. However, its V_SD = 1.6 V at 11 A results in higher conduction loss than discrete Schottky diodes; it is best used in non-synchronous configurations or where diode conduction is brief and infrequent.

STL19N60M6 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ M6

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 308mOhm @ 6.5A, 10V

Vgs(th) (Max) @ Id:: 4.75V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 16.8 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 650 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 90W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerFlat™ (8x8) HV

STL19N60M6 FAQ

1.How can I place an order for STL19N60M6 through Aetrix?

Please submit a Request for Quotation (RFQ) for STL19N60M6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STL19N60M6 reliable?

The price and inventory of STL19N60M6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STL19N60M6 is usually 5 days.

3.What payment methods are accepted for STL19N60M6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STL19N60M6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STL19N60M6?

STL19N60M6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STL19N60M6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STL19N60M6?

For technical support, including STL19N60M6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STL19N60M6 requirements.

6.How does Aetrix verify that STL19N60M6 is sourced from the original manufacturer or authorized distributors?

All STL19N60M6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STL19N60M6 meets industry standards.

7.What is the process for return or replacement of STL19N60M6?

All STL19N60M6 units undergo pre-shipment inspection (PSI). If there is an issue with STL19N60M6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STL19N60M6 part is unused and in its original packaging.

Return procedure for STL19N60M6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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