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STMicroelectronics STL20N6F7

Part No.:
STL20N6F7
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
8-PowerVDFN
Datasheet:
AetrixSTL20N6F7.pdf
Description:
MOSFET N-CH 60V 100A POWERFLAT
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,701

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Product details

Overview

STL20N6F7 from STMicroelectronics is an N-channel Power MOSFET with 60 V VDS, 4.6 mΩ typical RDS(on) at VGS = 10 V, 20 A continuous drain current at Tpcb = 25 °C, and PowerFLAT™ 3.3×3.3 HV package. It delivers high-efficiency switching in DC-DC converters, motor drivers, and load switches where low conduction loss and fast switching are critical.

For engineers reviewing the STL20N6F7 datasheet, STL20N6F7 pinout, STL20N6F7 application, or STL20N6F7 equivalent, key selection factors include its 66 pF Crss/Ciss ratio for EMI immunity, 25 nC total gate charge, 1.6 °C/W Rthj-case, unclamped inductive ruggedness, and thermal performance on FR-4 PCBs.

Technical Context

This device uses STripFET™ F7 trench-gate technology to achieve ultra-low RDS(on) while minimizing Crss (66 pF) and Ciss (1600 pF), enabling clean turn-on/turn-off waveforms in hard-switched topologies. Its gate threshold voltage (2–4 V) supports standard 10 V gate drive, and the integrated source-drain diode exhibits 39.6 ns trr and 36 nC Qrr under defined inductive recovery conditions.

The PowerFLAT™ 3.3×3.3 HV package features exposed drain pads on pins 5–8 and a thermally optimized layout with 42.8 °C/W Rthj-pcb on 1 in² 2 oz Cu FR-4, making it suitable for compact, high-power-density board-level designs without heatsinks.

Key Specifications

ParameterValue and Actual Design Meaning
VDS60 V - maximum blocking voltage for 48 V bus applications with margin
RDS(on) typ.4.6 mΩ at VGS = 10 V, ID = 10 A - enables <1 W conduction loss at 20 A
Qg25 nC - determines gate driver power requirement and switching speed
Crss/Ciss ratio66/1600 pF = 0.041 - reduces Miller-induced shoot-through risk and EMI
Rthj-pcb42.8 °C/W - defines temperature rise over ambient on standard PCB layout
trr / Qrr39.6 ns / 36 nC - impacts body diode commutation losses in synchronous rectification
VGS(th)2–4 V - ensures reliable enhancement-mode turn-on with TTL/CMOS-compatible drivers

Pinout & Package

STL20N6F7 is housed in a PowerFLAT™ 3.3×3.3 HV package with exposed drain thermal pad (pins 5–8), single gate terminal (pin 4), and source terminals (pins 1–3). The bottom-exposed drain improves thermal transfer to PCB copper.

Pin/TerminalCircuit RoleDesign Meaning
1, 2, 3 (S)SourceLow-side return path; paralleled for reduced bond-wire inductance and resistance
4 (G)GateControl input requiring ≤25 nC charge; sensitive to ringing due to low Crss
5, 6, 7, 8 (D)DrainHigh-side power node and primary thermal path to PCB via exposed copper pad

Key Features

FeatureDesign Value
Ultra-low RDS(on)4.6 mΩ typ. enables >95% efficiency in 12–48 V buck converters at 20 A
Low Crss/Ciss ratio0.041 minimizes dv/dt-induced gate disturbance during high-side switching
High avalanche ruggednessRated for unclamped inductive switching - supports robust operation in motor drives
Optimized for PCB thermal dissipationRthj-pcb = 42.8 °C/W on 1 in² 2 oz Cu - eliminates need for external heatsink

Applications

DC-DC ConvertersMotor Control Drivers

Use Scenario: Synchronous buck converter in telecom power supply delivering 12 V/20 A from 48 V input.

IC Role / Device Role: Low-side switch handling continuous 20 A with minimal conduction loss.

Use Value: 4.6 mΩ RDS(on) limits I²R loss to 1.84 W, reducing thermal stress and improving system efficiency.

Use Scenario: H-bridge half-bridge leg in 24 V BLDC motor controller for industrial actuators.

IC Role / Device Role: High-current, high-frequency switching element with fast 15 ns td(on).

Use Value: 25 nC Qg and 66 pF Crss allow clean 100 kHz PWM switching with low gate drive loss.

Load SwitchesHot-Swap Circuits

Use Scenario: Inrush-limited 48 V server board power rail enable switch.

IC Role / Device Role: Single-N MOSFET controlling power delivery with integrated body diode.

Use Value: 39.6 ns trr and 1.2 V VSD ensure low-loss reverse conduction during hot-plug transitions.

Use Scenario: OR-ing function in redundant 12 V power distribution for network equipment.

IC Role / Device Role: Back-to-back configured MOSFET for bidirectional current control.

Use Value: 60 V VDS rating and 4.6 mΩ RDS(on) support low-voltage-drop, high-reliability OR-ing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRF7470PBFRDS(on) = 5.2 mΩ @ 10 V; Ciss = 1520 pF; Crss = 85 pF; PowerSO-8 packageHigher thermal resistance (Rthj-pcb ≈ 60 °C/W); less EMI-robust Crss/Ciss ratio (0.056)Prefer when legacy SO-8 footprint compatibility is required over PCB thermal performance.
DMTH6005LPSQRDS(on) = 4.5 mΩ @ 10 V; Qg = 27.5 nC; Crss = 75 pF; PowerFLAT 5×6 packageLarger footprint; higher gate charge increases driver loss at high frequencyChoose when higher current derating (ID = 30 A @ Tpcb = 25 °C) justifies larger board area.

Compared with IRF7470PBF and DMTH6005LPSQ, STL20N6F7 offers the lowest Crss/Ciss ratio (0.041) and best PCB-level thermal resistance (42.8 °C/W), making it optimal for space-constrained, high-frequency, high-efficiency 48 V systems.

Availability

STL20N6F7 is available at Aetrix Electronics and suitable for DC-DC converters, motor control drivers, load switches, and hot-swap circuits requiring stable component supply, consistent parametric performance, and long-term industrial availability.

Supply support for STL20N6F7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STL20N6F7 belongs to the STripFET™ F7 power MOSFET product line, engineered specifically for high-efficiency, high-density power conversion in 12–60 V systems where low RDS(on), fast switching, and PCB thermal performance are critical.

FAQ

What is the maximum continuous drain current for STL20N6F7 at PCB temperature of 100 °C?

The maximum continuous drain current is 12 A when mounted on a standard FR-4 PCB at Tpcb = 100 °C, based on Rthj-pcb = 42.8 °C/W and Tj(max) = 150 °C. This reflects real-world thermal limits under sustained load without heatsink.

Does STL20N6F7 have avalanche capability, and is it rated?

Yes - STL20N6F7 is specified for unclamped inductive switching (UIS) per JEDEC JESD24-1. Its avalanche ruggedness is validated in the datasheet's safe operating area (SOA) curves and used in motor drive designs where inductive energy must be absorbed safely.

Can STL20N6F7 be used in synchronous rectification with body diode conduction?

Yes - its source-drain diode has characterized trr = 39.6 ns and Qrr = 36 nC at ID = 20 A, di/dt = 100 A/µs. These values support use in synchronous rectifier topologies where controlled body diode conduction precedes active switching.

What is the recommended PCB footprint for thermal reliability?

The manufacturer specifies a dedicated PowerFLAT™ 3.3×3.3 HV footprint (Figure 20), including 3.15 mm × 3.15 mm thermal pad with 0.65 mm solder mask opening and 0.3 mm stencil aperture for optimal thermal transfer and solder joint integrity.

STL20N6F7 Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
STripFET™ F7
Package/Case:
8-PowerVDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
5.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
25 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1600 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
3W (Ta), 78W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PowerFlat™ (3.3x3.3)

STL20N6F7 FAQ

1.How can I place an order for STL20N6F7 through Aetrix?

Please submit a Request for Quotation (RFQ) for STL20N6F7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STL20N6F7 reliable?

The price and inventory of STL20N6F7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STL20N6F7 is usually 5 days.

3.What payment methods are accepted for STL20N6F7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STL20N6F7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STL20N6F7?

STL20N6F7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STL20N6F7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STL20N6F7?

For technical support, including STL20N6F7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STL20N6F7 requirements.

6.How does Aetrix verify that STL20N6F7 is sourced from the original manufacturer or authorized distributors?

All STL20N6F7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STL20N6F7 meets industry standards.

7.What is the process for return or replacement of STL20N6F7?

All STL20N6F7 units undergo pre-shipment inspection (PSI). If there is an issue with STL20N6F7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STL20N6F7 part is unused and in its original packaging.

Return procedure for STL20N6F7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

STL20N6F7 Tags

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