My Inquiry
My Account
STMicroelectronics STL20NM20N
- Part No.:
- STL20NM20N
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
STL20NM20N.pdf
- Description:
- MOSFET N-CH 200V 20A POWERFLAT
- Quantity:
- Payment:
- Shipping:
Inventory:5,244
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
STL20NM20N from STMicroelectronics is an N-channel 200 V, 20 A MDmesh™ II Power MOSFET in PowerFLAT™ (6×5) package, featuring typ. RDS(on) = 0.088 Ω, Qg = 32 nC, and ultra-low profile (1 mm max). It serves as a high-efficiency primary-side switch in isolated DC-DC converters for telecom and server power supplies.
For engineers reviewing the STL20NM20N datasheet, STL20NM20N pinout, STL20NM20N application, or STL20NM20N equivalent, key selection criteria include gate charge minimization for ZVS/ZCS operation, avalanche ruggedness (EAS = 380 mJ), thermal resistance (Rthj-c = 1.56 °C/W), and compatibility with high dv/dt (10 V/ns) switching environments.
Technical Context
This MOSFET employs ST's MDmesh™ II silicon architecture optimized for 200 V class, delivering world-leading gate charge-to-RDS(on) ratio. Its low Ciss (800 pF), Coss (330 pF), and Crss (130 pF) enable fast, low-loss switching at high frequencies up to several hundred kHz.
The device integrates a robust intrinsic body diode with trr = 160 ns (Tj = 25°C) and Qrr = 960 nC, supporting hard-switched and resonant topologies. Its PowerFLAT™ (6×5) package provides direct die-to-PCB thermal path and Rthj-pcb = 35 °C/W on 1 in² FR-4 (2 oz Cu).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 200 V - supports primary-side switching in 48 V input telecom DC-DC converters with 2× safety margin |
| RDS(on) max | 0.105 Ω - ensures ≤2.1 W conduction loss at ID = 20 A, TC = 25°C |
| Qg | 32 nC - enables efficient gate drive with low-power controllers and reduces switching loss in high-frequency operation |
| EAS | 380 mJ - sustains unclamped inductive switching stress without failure in flyback/LLC primary circuits |
| tr/tf | 15 ns / 11 ns - supports <500 kHz PWM with minimal overlap loss when driven by 4.7 Ω gate resistor |
| Rthj-c | 1.56 °C/W - allows 51 W continuous power dissipation before junction exceeds 150°C at TC = 25°C |
| dv/dt rating | 10 V/ns - prevents spurious turn-on during fast voltage transients in high-density power stages |
Pinout & Package
STL20NM20N uses PowerFLAT™ (6×5) - a 5-pin, chip-scale, surface-mount package with exposed drain pad (pins 1–3: source; pin 4: gate; pin 5: drain). Height ≤ 0.93 mm enables ultra-thin power modules.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 (Source) | Source connection (common return) | Low-inductance parallel routing reduces source loop inductance for stable high-speed switching |
| 4 (Gate) | Control terminal | Low gate resistance (typ. 1.2 Ω) and Ciss = 800 pF allow clean 10 V logic-level drive with minimal overshoot |
| 5 (Drain) | High-side power node | Exposed copper pad provides primary thermal path to PCB and supports >80 W pulsed dissipation |
Key Features
| Feature | Design Value |
|---|---|
| Worldwide lowest Qg/RDS(on) ratio | Enables >95% efficiency in 100–300 kHz telecom PSUs without complex gate drive or snubbers |
| MDmesh™ II silicon process | Reduces cell pitch and improves charge balancing, yielding 25% lower RDS(on) vs prior generation at same voltage class |
| PowerFLAT™ (6×5) footprint | 6 mm × 5 mm area cuts board space by 40% vs TO-220 while maintaining thermal performance via direct die-to-PCB coupling |
| Avalanche-rated (EAS = 380 mJ) | Eliminates need for external clamping in flyback/forward converters operating near SOA limits |
Applications
| Telecom DC-DC Converters | Server VRMs |
|---|---|
Use Scenario: Primary-side switch in 48 V input, 12 V output isolated forward converter for telecom shelf power. IC Role / Device Role / Timing Role: High-voltage switching element handling 20 A continuous current with 200 V blocking capability and sub-50 ns switching transitions. Use Value: Low Qg and RDS(on) reduce total losses by 1.8 W vs comparable 200 V MOSFETs, enabling higher power density at 250 kHz. | Use Scenario: Main switch in multiphase buck-derived VRM supplying CPU core voltage from 12 V intermediate bus. IC Role / Device Role / Timing Role: Synchronous rectifier driver companion in high-side position, leveraging fast tf = 11 ns for precise dead-time control. Use Value: Low Coss and dv/dt immunity prevent shoot-through during high di/dt load transients (>200 A/µs). |
| Industrial SMPS | LED Driver Power Stages |
Use Scenario: Switching transistor in 200–400 W industrial AC-DC PFC + LLC combo supply. IC Role / Device Role / Timing Role: Primary-side LLC resonant switch operating in ZVS mode at 300–500 kHz with 160 V VDS swing. Use Value: Ultra-low Qgd/Qg ratio (25/32 nC) ensures reliable ZVS across full load range and temperature. | Use Scenario: High-side switch in constant-current LED driver for street lighting with 100–200 V string voltage. IC Role / Device Role / Timing Role: PWM-controlled current regulator with integrated body diode conducting freewheeling current during off-cycle. Use Value: Body diode trr = 160 ns and Qrr = 960 nC minimize switching loss and EMI during diode commutation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar 200 V power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPD20N20N3 G | RDS(on) max = 0.115 Ω; Qg = 36 nC; TO-252 package (higher Rthj-pcb) | Less suitable for ultra-thin designs; requires larger PCB area and heatsinking | Prefer when legacy TO-252 layout reuse is required and height constraint is relaxed |
| IRF640NPBF | RDS(on) max = 0.18 Ω; Qg = 67 nC; TO-220 package; no avalanche rating | Higher conduction and switching loss; not rated for repetitive avalanche stress | Only acceptable for low-frequency (<100 kHz), non-avalanche, cost-sensitive designs |
Compared with IPD20N20N3G and IRF640NPBF, STL20NM20N delivers superior power density, lower gate drive loss, and guaranteed avalanche ruggedness-critical for modern high-frequency, compact telecom and server power stages.
Availability
STL20NM20N is available at Aetrix Electronics and suitable for telecom DC-DC converters, server VRMs, and industrial SMPS requiring stable component supply and long-term design-in support.
Supply support for STL20NM20N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, MCU, power, and sensor solutions for automotive, industrial, and consumer markets.
The MDmesh™ MOSFET product line targets high-efficiency, high-frequency power conversion, with STL20NM20N specifically engineered for 200 V primary-side switching where gate charge, thermal performance, and avalanche reliability are critical.
FAQ
Is STL20NM20N suitable for zero-voltage switching (ZVS) topologies?
Yes. With Qg = 32 nC and Qgd = 25 nC, STL20NM20N achieves reliable ZVS in LLC resonant converters operating up to 500 kHz. Its low Coss (330 pF) and fast tr/tf ensure minimal dead-time loss and stable soft-switching across load and temperature ranges.
What is the maximum continuous drain current at 100°C case temperature?
The maximum continuous drain current is 12.3 A at TC = 100°C, derated from 20 A at 25°C per the specified derating factor of 0.02 W/°C and RDS(on) increase with temperature. This value is validated under steady-state thermal conditions with proper PCB copper area.
Does STL20NM20N have lead-free and RoHS-compliant packaging?
Yes. STL20NM20N is supplied in ECOPACK®-compliant PowerFLAT™ (6×5) packaging with lead-free second-level interconnect, meeting JEDEC JESD97 standards. The inner box label indicates the eco-category and soldering profile compliance for reflow assembly.
Can STL20NM20N replace older ST 200 V MOSFETs like STP20NM20 in existing designs?
No direct drop-in replacement: STL20NM20N uses PowerFLAT™ (6×5), while STP20NM20 uses TO-220. Pinout, thermal path, and gate drive dynamics differ significantly. Layout redesign and thermal validation are required; however, its lower RDS(on) and Qg justify redesign for efficiency-critical upgrades.
STL20NM20N Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™ II
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 105mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 50 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 800 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 80W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerFlat™ (5x6)
STL20NM20N FAQ
1.How can I place an order for STL20NM20N through Aetrix?
Please submit a Request for Quotation (RFQ) for STL20NM20N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STL20NM20N reliable?
The price and inventory of STL20NM20N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STL20NM20N is usually 5 days.
3.What payment methods are accepted for STL20NM20N?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STL20NM20N transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STL20NM20N?
STL20NM20N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STL20NM20N order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STL20NM20N?
For technical support, including STL20NM20N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STL20NM20N requirements.
6.How does Aetrix verify that STL20NM20N is sourced from the original manufacturer or authorized distributors?
All STL20NM20N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STL20NM20N meets industry standards.
7.What is the process for return or replacement of STL20NM20N?
All STL20NM20N units undergo pre-shipment inspection (PSI). If there is an issue with STL20NM20N, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STL20NM20N part is unused and in its original packaging.
Return procedure for STL20NM20N:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
STL20NM20N Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
