STMicroelectronics STL21N65M5
- Part No.:
- STL21N65M5
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
STL21N65M5.pdf
- Description:
- MOSFET N-CH 650V 17A PWRFLAT HV
- Quantity:
- Payment:

- Shipping:

Inventory:5,191
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Product details
Overview
STL21N65M5 from STMicroelectronics is an N-channel 650 V, 17 A Power MOSFET in PowerFLAT 8x8 HV package, featuring 190 mΩ max RDS(on), 44 nC total gate charge, and 100% avalanche tested. It leverages MDmesh M5 vertical process + PowerMESH layout for ultra-low conduction loss and high-efficiency operation in high-voltage switching power supplies.
For engineers reviewing the STL21N65M5 datasheet, STL21N65M5 pinout, STL21N65M5 application, or STL21N65M5 equivalent, this device is selected for high-power SMPS, PFC stages, and industrial motor drives where low RDS(on), fast switching (tr = 10 ns), and robust avalanche capability are critical design requirements.
Technical Context
This MOSFET employs ST's MDmesh M5 silicon technology with a dual-source configuration-separate driver source (Pin 2) and power source (Pins 3 & 4)-to minimize source inductance and suppress gate oscillation during hard switching. Its 15 V/ns dv/dt rating and 400 mJ single-pulse avalanche energy support reliable operation under inductive load transients.
The device delivers 175 mΩ typical RDS(on) at VGS = 10 V and ID = 8.5 A, with Ciss = 1950 pF and Crss = 3 pF enabling high-frequency ZVS/ZCS topologies. Thermal resistance RthJC = 1 °C/W ensures efficient heat transfer to heatsink-mounted PCBs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 650 V - supports primary-side switching in 400 V AC-input offline SMPS and telecom rectifiers |
| RDS(on) max | 190 mΩ - enables <1.7 W conduction loss at 11 A continuous drain current (TC = 100 °C) |
| ID cont @ TC = 25 °C | 17 A - rated for high-current DC-DC output stages and half-bridge legs without forced cooling |
| Qg | 44 nC - reduces gate drive power and allows use of lower-cost drivers in 100–300 kHz designs |
| EAS | 400 mJ - withstands unclamped inductive switching events without failure in motor control or PFC circuits |
| dv/dt rating | 15 V/ns - prevents spurious turn-on in high-noise bridge configurations with fast-rising bus voltages |
| RthJC | 1 °C/W - permits direct thermal coupling to metal-core PCBs or heatsinks for compact high-power density layouts |
Pinout & Package
Package: PowerFLAT 8x8 HV - surface-mount, thermally enhanced, 8 mm × 8 mm footprint with exposed drain pad for low-inductance, high-current routing and efficient thermal dissipation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate | High-impedance control input; requires low-inductance gate loop to exploit low Qg and prevent ringing |
| Pin 2 | Driver Source | Dedicated Kelvin source connection for gate driver return-eliminates source inductance impact on switching speed and stability |
| Pins 3 & 4 | Power Source | Main current return path for high-power conduction; electrically isolated from Pin 2 to preserve gate control integrity |
| Pin 5 | Drain | Exposed copper pad on bottom side-primary thermal and high-current path; must be soldered to large copper area or heatsink |
Key Features
| Feature | Design Value |
|---|---|
| Extremely low RDS(on) | 175 mΩ typ. at 10 V drive enables >98% efficiency in 1 kW PFC boost stages |
| Low gate charge & Ciss | 44 nC Qg and 1950 pF Ciss reduce switching losses and simplify gate driver selection |
| Extra driving source pin | Pin 2 (driver source) isolates gate loop from power current path-critical for stable 300+ kHz operation |
| 100% avalanche tested | Each unit validated to 400 mJ EAS ensures field reliability in unclamped inductive loads |
| MDmesh M5 + PowerMESH | Vertical superjunction + horizontal layout synergy achieves best-in-class RDS(on) × Qg figure-of-merit |
Applications
| Industrial Motor Drives | Server & Telecom SMPS |
|---|---|
|
Use Scenario: Half-bridge inverter stage for 3-phase BLDC motor control in HVAC compressors and pumps. IC Role / Device Role / Timing Role: High-side/low-side switching element handling 11 A continuous phase current at 20–50 kHz PWM frequency. Use Value: Low RDS(on) minimizes I²R losses in compact enclosed enclosures; avalanche rating protects against back-EMF spikes during sudden load stops. |
Use Scenario: Primary-side switch in 1.5 kW LLC resonant converter for AI server power supplies. IC Role / Device Role / Timing Role: Hard-switched or ZVS-capable main transistor operating up to 300 kHz with 520 V bus voltage. Use Value: Low Crss (3 pF) and optimized gate charge enable clean zero-voltage switching transitions and reduced EMI generation. |
| Industrial PFC Boost Converter | EV Onboard Charger (OBC) Input Stage |
|
Use Scenario: Continuous conduction mode (CCM) boost switch in 3.3 kW single-phase PFC front-end. IC Role / Device Role / Timing Role: High-voltage switching node carrying 17 A peak current with 650 V blocking capability. Use Value: 190 mΩ RDS(on) limits conduction loss to <2.2 W at full load, supporting >98.5% PFC efficiency at 230 V AC input. |
Use Scenario: Active rectification switch in bidirectional OBC AC/DC stage for 6.6 kW charging. IC Role / Device Role / Timing Role: Bidirectional high-voltage switch supporting both grid-to-battery and battery-to-grid modes. Use Value: Robust body diode (VSD = 1.5 V, trr = 294 ns) and low Qrr (4 µC) reduce reverse recovery losses during synchronous rectification. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXTH14N65X2 | Higher RDS(on) (220 mΩ), higher Qg (52 nC), TO-247 package | Requires external heatsink; less suitable for space-constrained SMT designs | Prefer when higher avalanche margin (EAS = 1.2 J) outweighs board-area and thermal interface constraints |
| IPP65R190CFD7 | Similar RDS(on) (190 mΩ), but no dedicated driver source pin; PG-TO220FP-3-1 package | Lacks Kelvin source-limits achievable switching speed and increases gate drive complexity | Select only if legacy through-hole assembly is mandatory and gate oscillation can be mitigated via layout |
Compared with IXTH14N65X2 and IPP65R190CFD7, STL21N65M5 offers superior power density and switching fidelity due to its PowerFLAT 8x8 HV package with driver source pin, making it optimal for high-frequency, high-efficiency SMT-based power converters where layout parasitics must be minimized.
Availability
STL21N65M5 is available at Aetrix Electronics and suitable for industrial motor drives, telecom SMPS, and EV onboard charger designs requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.
Supply support for STL21N65M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.
This device belongs to ST's MDmesh™ M5 high-voltage MOSFET product line, engineered specifically for high-efficiency, high-frequency switched-mode power supplies and industrial motor control systems demanding low RDS(on) × Qg figures of merit.
FAQ
What is the maximum continuous drain current at case temperature of 100 °C?
The STL21N65M5 supports 11 A continuous drain current at TC = 100 °C, as specified in Table 1 of DS6814 Rev 6. This derating reflects thermal limitations of the PowerFLAT 8x8 HV package under sustained high-power operation without forced airflow or heatsinking.
Does the device include an integrated body diode, and what are its key parameters?
Yes, STL21N65M5 features an inherent N-channel body diode with forward voltage VSD = 1.5 V at ISD = 17 A and reverse recovery time trr = 294 ns at TJ = 25 °C. Its Qrr = 4 µC and IRRM = 28 A support moderate-speed synchronous rectification in PFC and DC-DC topologies.
How does the driver source (Pin 2) differ from the power source (Pins 3 & 4)?
Pin 2 is a dedicated Kelvin connection for the gate driver return path, electrically isolated from the high-current power source terminals (Pins 3 & 4). This separation eliminates source inductance from the gate control loop, preventing oscillation and enabling faster, more predictable switching transitions.
Is the STL21N65M5 suitable for use in avalanche-prone circuits like inductive load switching?
Yes-every unit undergoes 100% production avalanche testing per Table 3, with guaranteed EAS = 400 mJ (single pulse, TJ = 25 °C) and IAR = 5 A. This makes it appropriate for unclamped inductive switching in motor drives and relay drivers where transient overvoltage protection is essential.
STL21N65M5 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™ V
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 650 V
- Current - Continuous Drain (Id) @ 25°C:
- 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 179mOhm @ 8.5A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 50 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1950 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3W (Ta), 125W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerFlat™ (8x8) HV
STL21N65M5 FAQ
1.How can I place an order for STL21N65M5 through Aetrix?
Please submit a Request for Quotation (RFQ) for STL21N65M5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STL21N65M5 reliable?
The price and inventory of STL21N65M5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STL21N65M5 is usually 5 days.
3.What payment methods are accepted for STL21N65M5?
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4.How is shipping managed for STL21N65M5?
STL21N65M5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STL21N65M5 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STL21N65M5?
For technical support, including STL21N65M5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STL21N65M5 requirements.
6.How does Aetrix verify that STL21N65M5 is sourced from the original manufacturer or authorized distributors?
All STL21N65M5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STL21N65M5 meets industry standards.
7.What is the process for return or replacement of STL21N65M5?
All STL21N65M5 units undergo pre-shipment inspection (PSI). If there is an issue with STL21N65M5, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STL21N65M5 part is unused and in its original packaging.
Return procedure for STL21N65M5:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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