STMicroelectronics STL22N65M5

Overview

STL22N65M5 from STMicroelectronics is an N-channel 650 V, 15 A Power MOSFET in PowerFLAT 8x8 HV package, featuring 210 mΩ max R_DS(on), 36 nC total gate charge, and 100% avalanche-tested ruggedness. It leverages MDmesh M5 vertical process technology for high-efficiency switching in offline SMPS, PFC stages, and industrial motor drives.

For engineers reviewing the STL22N65M5 datasheet, STL22N65M5 pinout, STL22N65M5 application, or STL22N65M5 equivalent, this device is selected for high-voltage, medium-current power conversion where low conduction loss, fast switching, and robust unclamped inductive switching capability are critical.

Technical Context

This MOSFET employs ST's MDmesh M5 superjunction architecture to achieve ultra-low R_DS(on) × area trade-off, enabling higher power density than planar 650 V devices. Its 1434 pF C_iss and 3.7 pF C_rss support efficient hard-switching at up to 100 kHz with minimal Miller-induced turn-on risk.

The integrated source-drain diode delivers 272 ns t_rr and 3.4 µC Q_rr at 25 °C, optimized for ZVS-capable topologies and reducing switching losses in bridge configurations. The 15 V/ns dv/dt rating ensures reliable operation under fast transient conditions without spurious turn-on.

Key Specifications

Pinout & Package

STL22N65M5 uses the PowerFLAT 8x8 HV type A package - a surface-mount, thermally enhanced leadless package with exposed drain pad on bottom side for optimal heat transfer. Pin 1 is marked by a notch or dot on the top silkscreen.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPW65R041CFD7 and STW20N65M5, STL22N65M5 offers the smallest PCB footprint and lowest profile among 650 V 15 A MOSFETs, making it optimal for space-constrained, surface-mount power supplies where thermal interface to PCB is well-engineered.

Availability

STL22N65M5 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, EV onboard chargers, and uninterruptible power systems requiring stable component supply across multi-year production cycles.

Supply support for STL22N65M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to ST's MDmesh™ M5 high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-power-density AC/DC and DC/DC conversion in industrial and renewable energy systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STL22N65M5 supports 9.5 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS9209 Rev 4. This derating reflects thermal limitations of the PowerFLAT 8x8 HV package and ensures safe operation within SOA boundaries under sustained high-temperature conditions.

Does this MOSFET include an integrated body diode, and what are its key recovery parameters?

Yes, STL22N65M5 features an integrated source-drain diode with 272 ns reverse recovery time (t_rr) and 3.4 µC reverse recovery charge (Q_rr) at 25 °C, measured at I_SD = 15 A and di/dt = 100 A/µs. These values are confirmed in Table 7 of the datasheet and validated for use in synchronous rectification and freewheeling paths.

Can STL22N65M5 be used in avalanche mode, and what is its rated avalanche energy?

Yes - STL22N65M5 is 100% avalanche tested per ST's qualification standards. Its single-pulse avalanche energy (E_AS) is rated at 270 mJ at T_j = 25 °C, with 4 A repetitive avalanche current (I_AR). This enables robust operation during inductive switching faults without external protection components.

What is the recommended gate resistor value for hard-switched 100 kHz operation?

For hard-switched operation at 100 kHz with V_DD = 400 V and I_D = 12 A, a 4.7 Ω gate resistor is validated in Figure 16 of DS9209 Rev 4, yielding t_d(v) = 43 ns and t_c(off) = 11.5 ns. Lower values (e.g., 2.2 Ω) may be used if gate driver peak current capacity ≥2 A and EMI constraints permit.