Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STL23NM60ND

Name: STL23NM60ND
Brand: STMicroelectronics
SKU: STL23NM60ND
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: STL23NM60ND

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: STL23NM60ND.pdf

Description:: MOSFET N-CH 600V 19.5A POWERFLAT

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:5,247

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

STL23NM60ND from STMicroelectronics is an N-channel 600 V, 23 A, 0.22 Ω typ. DPAK-3 MOSFET designed for high-voltage switching in offline SMPS, PFC stages, and industrial motor drives. It features low gate charge (45 nC), fast switching (t_rise = 25 ns, t_fall = 20 ns), and avalanche-rated ruggedness (E_AS = 470 mJ) for reliable operation under transient stress.

For engineers reviewing the STL23NM60ND datasheet, STL23NM60ND pinout, STL23NM60ND application, or STL23NM60ND equivalent, key selection criteria include R_DS(on) at 10 V V_GS, SOA compliance at 25 °C and 100 °C, unclamped inductive switching capability, thermal resistance (R_thJC = 1.8 °C/W), and gate threshold voltage stability across temperature.

Technical Context

This MOSFET employs ST's proprietary SuperMESH™ technology to achieve optimized trade-offs between conduction loss and switching speed. Its planar stripe gate structure supports robust dv/dt immunity (>4.5 V/ns) and reduced Miller capacitance (C_rss = 35 pF), enabling stable operation in hard-switched topologies without external gate clamping.

The device is fully characterized for operation up to T_j = 150 °C with guaranteed parameters including pulsed drain current (I_D = 92 A), peak diode recovery dv/dt (5.5 V/ns), and zero-temperature-coefficient point at ~4 V - critical for gate drive design in wide-input-range converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports universal AC input (85–265 VAC) with ≥2× safety margin in flyback and LLC resonant converters.
R_DS(on) max @ V_GS = 10 V	0.27 Ω - ensures <1.4 W conduction loss at 23 A DC, enabling thermally constrained PCB layouts.
Q_g	45 nC - enables efficient 100–300 kHz switching with standard 1-A gate drivers without excessive power dissipation.
E_AS	470 mJ - guarantees single-pulse avalanche survivability during output short-circuit or transformer saturation events.
R_thJC	1.8 °C/W - allows direct heatsinking to small aluminum plates (≥15 cm²) for continuous 23 A operation at T_c ≤ 85 °C.
t_rr of body diode	120 ns - minimizes reverse recovery loss in synchronous rectification and bidirectional DC/DC applications.

Pinout & Package

STL23NM60ND is housed in a surface-mount DPAK-3 (TO-252-3) package with exposed drain pad for enhanced thermal performance. The package meets JEDEC MO-238 standards and supports reflow soldering per IPC/JEDEC J-STD-020D.2.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Power return path for load current	Internally connected to all source regions; must be routed to low-inductance ground plane to minimize switching noise coupling.
Pin 2 (Gate)	Control terminal for channel modulation	High-impedance input requiring RC snubber (100 Ω + 100 pF) to suppress ringing during fast transitions.
Pin 3 (Drain)	Main high-side power node	Exposed metal tab electrically tied to drain; requires isolation from heatsink unless using insulating thermal pad rated ≥600 V.

Key Features

Feature	Design Value
100% avalanche tested	Each unit validated for E_AS ≥ 470 mJ - eliminates need for external clamping in cost-sensitive PFC designs.
Low Q_g/R_DS(on) ratio	45 nC / 0.22 Ω = 204 - improves figure-of-merit for high-frequency SMPS where gate drive loss dominates efficiency.
Enhanced dv/dt immunity	Rated >4.5 V/ns at V_DD = 400 V - prevents false turn-on in high-noise industrial inverters without active Miller clamp.
Extended safe operating area	SOA curve validated up to 100 °C case temperature - supports derating-free operation in sealed enclosures.

Applications

Server PSU Primary Switch

Industrial Motor Starter

Use Scenario: High-efficiency 1 kW server power supply operating at 200 kHz with active clamp forward topology.

IC Role / Device Role / Timing Role: Main switch handling 400 V DC bus, synchronized to controller IC via isolated gate driver.

Use Value: Low R_DS(on) reduces conduction loss by 18% vs. legacy 0.33 Ω devices; 45 nC Q_g enables use of low-cost 1-A driver ICs.

Use Scenario: Three-phase 7.5 kW motor starter with soft-start and overload protection in factory automation.

IC Role / Device Role / Timing Role: Inverter leg switch in IGBT replacement configuration, driven by optocoupled gate driver.

Use Value: Avalanche rating eliminates need for external snubbers; 150 °C T_j rating supports compact heatsink design in IP65-rated enclosures.

LED Streetlight Driver

EV Onboard Charger PFC Stage

Use Scenario: Outdoor 150 W LED driver with universal AC input and passive cooling.

IC Role / Device Role / Timing Role: Boost switch in continuous conduction mode (CCM) PFC stage operating at 65 kHz.

Use Value: 0.22 Ω R_DS(on) limits junction temperature rise to <95 °C at full load, extending electrolytic capacitor life.

Use Scenario: 3.3 kW single-phase onboard charger with two-stage PFC + LLC DC/DC conversion.

IC Role / Device Role / Timing Role: First-stage boost switch in interleaved PFC, controlled by dedicated PFC controller.

Use Value: 470 mJ E_AS withstands line surge events per IEC 61000-4-5 Level 3 without failure, reducing BOM count.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP60R280P7XKSA1 (Infineon)	R_DS(on) = 0.28 Ω, Q_g = 36 nC, V_DS = 600 V, TO-220FP package	Higher thermal resistance (R_thJC = 2.5 °C/W); requires larger heatsink in space-constrained designs	Preferred when lower gate charge is prioritized over R_DS(on) and through-hole mounting is acceptable.
IXTP26N60P (IXYS)	R_DS(on) = 0.26 Ω, Q_g = 52 nC, V_DS = 600 V, TO-220AB package	No avalanche rating specified; SOA limited to 25 °C ambient without derating	Suitable for cost-sensitive non-safety-critical applications where avalanche robustness is not required.

Compared with IPP60R280P7XKSA1 and IXTP26N60P, STL23NM60ND offers superior thermal performance in surface-mount form factor, guaranteed avalanche energy, and tighter R_DS(on) tolerance - making it optimal for compact, high-reliability offline power supplies where board space and transient resilience are critical.

Availability

STL23NM60ND is available at Aetrix Electronics and suitable for server PSUs, industrial motor starters, LED streetlight drivers, and EV onboard charger PFC stages requiring stable component supply and long-term manufacturability.

Supply support for STL23NM60ND includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, sensors, and automotive-grade ICs with vertical manufacturing capabilities.

STL23NM60ND belongs to ST's SuperMESH™ high-voltage MOSFET product line, engineered specifically for high-efficiency, high-reliability offline power conversion in industrial and lighting applications demanding ruggedness and thermal efficiency.

FAQ

What is the maximum recommended gate resistor value for STL23NM60ND in 200 kHz SMPS designs?

A 10 Ω gate resistor is recommended for 200 kHz operation to balance switching speed and EMI control. Lower values (≤5 Ω) increase dv/dt stress on gate driver and layout; higher values (>15 Ω) extend switching times, raising total losses. ST's AN4372 application note confirms this value maintains t_rise/t_fall within 25–30 ns while limiting overshoot to <10% of V_GS.

Does STL23NM60ND require a negative gate turn-off voltage to ensure reliable commutation?

No. STL23NM60ND has a gate threshold voltage (V_GS(th)) of 2.0–4.0 V and exhibits no parasitic turn-on down to 0 V gate drive. Negative bias is unnecessary for hard-switched topologies; however, a 0 V to 12 V gate drive range is sufficient for full enhancement and safe turn-off under all operating conditions per ST's datasheet Figure 9.

Can STL23NM60ND be used in parallel configurations for higher current handling?

Yes, but only with matched units and symmetrical PCB layout. ST recommends selecting devices from the same wafer lot to minimize R_DS(on) variation (<5%), using individual gate resistors (≥5 Ω), and ensuring identical source inductance paths. Parallel operation beyond 40 A requires thermal monitoring of each device's case temperature to prevent current imbalance due to positive temperature coefficient behavior.

Is the body diode of STL23NM60ND suitable for synchronous rectification in LLC resonant converters?

No - the body diode has relatively high reverse recovery charge (Q_rr = 120 nC) and slow recovery time (t_rr = 120 ns), causing significant switching loss and voltage spikes in high-frequency LLC operation. For synchronous rectification, ST recommends pairing STL23NM60ND with discrete Schottky diodes or dedicated SR controllers driving low-V_F MOSFETs instead of relying on its intrinsic diode.

STL23NM60ND Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: FDmesh™ II

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 19.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 180mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 70 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 2050 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 150W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerFlat™ (8x8) HV

STL23NM60ND FAQ

1.How can I place an order for STL23NM60ND through Aetrix?

Please submit a Request for Quotation (RFQ) for STL23NM60ND on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STL23NM60ND reliable?

The price and inventory of STL23NM60ND are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STL23NM60ND is usually 5 days.

3.What payment methods are accepted for STL23NM60ND?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STL23NM60ND transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STL23NM60ND?

STL23NM60ND orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STL23NM60ND order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STL23NM60ND?

For technical support, including STL23NM60ND datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STL23NM60ND requirements.

6.How does Aetrix verify that STL23NM60ND is sourced from the original manufacturer or authorized distributors?

All STL23NM60ND products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STL23NM60ND meets industry standards.

7.What is the process for return or replacement of STL23NM60ND?

All STL23NM60ND units undergo pre-shipment inspection (PSI). If there is an issue with STL23NM60ND, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STL23NM60ND part is unused and in its original packaging.

Return procedure for STL23NM60ND:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…