STMicroelectronics STL24N60DM2

Overview

STL24N60DM2 from STMicroelectronics is a high-voltage N-channel Power MOSFET in the MDmesh™ DM2 series, featuring 600 V V_(BR)DSS, 0.195 Ω typ. R_DS(on) at V_GS = 10 V and 9 A, 15 A continuous drain current (T_case = 25 °C), and fast-recovery body diode with Q_rr = 956 nC - designed for ZVS phase-shift converters and bridge topologies in industrial SMPS.

For engineers reviewing the STL24N60DM2 datasheet, STL24N60DM2 pinout, STL24N60DM2 application, or STL24N60DM2 equivalent, key selection criteria include dv/dt ruggedness (50 V/ns), low gate charge (29 nC), thermal resistance (1 °C/W j-case), and avalanche rating (160 mJ E_AS) in high-efficiency, high-reliability power conversion designs.

Technical Context

This device implements ST's MDmesh™ DM2 silicon technology optimized for high-voltage switching with integrated fast-recovery body diode. It delivers low Q_rr (956–1450 nC) and short t_rr (155–200 ns) under 18 A inductive recovery conditions, enabling reduced switching losses in hard- and soft-switching topologies.

The PowerFLAT™ 8x8 HV package provides 1 °C/W junction-to-case thermal resistance and supports high-current operation up to 15 A continuous, with robust dv/dt immunity (50 V/ns MOSFET, 40 V/ns diode recovery) and 100% unclamped inductive avalanche testing at 3 A.

Key Specifications

Pinout & Package

STL24N60DM2 uses the PowerFLAT™ 8x8 HV surface-mount package with exposed drain pad (top-side source terminals). The package features 5 mm² thermal pad area and FR-4-compatible footprint per Figure 21 in DocID026017 Rev 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Compared with IXTH24N60L2 and IPP60R190C7, STL24N60DM2 uniquely balances low R_DS(on), ultra-low Q_g, and industry-leading Q_rr/t_rr - making it optimal for soft-switched topologies where diode recovery dominates system efficiency.

Availability

STL24N60DM2 is available at Aetrix Electronics and suitable for industrial SMPS, server power supplies, motor drive inverters, and solar microinverters requiring stable component supply and long-term production continuity.

Supply support for STL24N60DM2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power, analog, MEMS, and microcontroller technologies for industrial, automotive, and consumer markets.

This device belongs to ST's MDmesh™ DM2 high-voltage MOSFET product line, engineered specifically for high-efficiency, high-frequency switching power supplies demanding fast diode recovery and rugged avalanche capability.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STL24N60DM2 supports 9.5 A continuous drain current at T_case = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limits of the PowerFLAT™ 8x8 HV package and ensures safe operation within SOA boundaries under sustained high-temperature conditions.

Does this MOSFET require an external gate resistor for stability?

A gate resistor of 4.7 Ω is used in the official switching time test circuit (Figure 14), confirming stable operation without oscillation. Due to low C_rss (2.4 pF) and moderate Q_g (29 nC), values between 2.2 Ω and 10 Ω are typical - lower values improve switching speed but increase EMI risk.

Is the body diode suitable for synchronous rectification?

Yes - the integrated fast-recovery body diode has t_rr = 155 ns and Q_rr = 956 nC at 18 A, enabling effective synchronous rectification in LLC and phase-shifted full-bridge converters without external diodes, provided gate timing avoids shoot-through.

What is the recommended PCB layout for thermal performance?

Mount the exposed drain pad directly to a ≥200 mm² copper pour on inner or outer layer with ≥6 thermal vias (0.3 mm diameter, 0.8 mm pitch) connecting to internal ground planes. Per Table 3, this achieves R_thj-pcb ≈ 45 °C/W on 1-inch² FR-4 with 2 oz Cu, complementing the 1 °C/W j-case path.