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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STL24NM60N

Name: STL24NM60N
Brand: STMicroelectronics
SKU: STL24NM60N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STL24NM60N

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: STL24NM60N.pdf

Description:: MOSFET N-CH 600V 16A POWERFLAT

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STL24NM60N from STMicroelectronics is an N-channel 600 V, 0.215 Ω (max), 16 A Power MOSFET using MDmesh™ II vertical strip technology in a PowerFLAT™ 8x8 HV package. It delivers low gate charge (44 nC) and low input capacitance (1330 pF), enabling high-efficiency operation in hard-switched SMPS topologies such as PFC and LLC resonant converters.

For engineers reviewing the STL24NM60N datasheet, STL24NM60N pinout, STL24NM60N application, or STL24NM60N equivalent, key selection criteria include R_DS(on) stability over temperature, avalanche ruggedness (E_AS = 300 mJ), diode reverse recovery performance (Q_rr = 4.6 µC), and thermal resistance (R_thj-case = 1 °C/W).

Technical Context

This MOSFET employs ST's second-generation MDmesh™ process with optimized cell pitch and deep-trench gate structure to minimize conduction and switching losses simultaneously. Its vertical architecture enables high-voltage blocking (600 V V_DS) while maintaining low R_DS(on) × Q_g figure-of-merit (≈9.5 Ω·nC).

The device integrates a fast, soft-recovery body diode (t_rr = 340 ns, I_RRM = 27 A) and is 100% avalanche tested for unclamped inductive switching robustness. Gate threshold voltage (2–4 V) and normalized R_DS(on) vs. temperature behavior are characterized across –50 °C to 150 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports primary-side switching in universal-input offline SMPS up to 400 V DC bus.
R_DS(on) max	0.215 Ω @ V_GS = 10 V, I_D = 8 A - ensures <1.4 W conduction loss at 16 A continuous drain current.
Q_g	44 nC - enables efficient gate drive with standard 1-A peak drivers and reduces switching energy loss.
C_iss	1330 pF @ V_DS = 50 V - limits Miller-induced dv/dt turn-on risk in high-side configurations.
E_AS	300 mJ @ T_j = 25 °C - guarantees single-pulse avalanche survivability in flyback and forward converter snubberless designs.
R_thj-case	1.0 °C/W - allows 125 W power dissipation with ≤125 °C junction rise above case, supporting high-power density layouts.

Pinout & Package

STL24NM60N uses the PowerFLAT™ 8x8 HV surface-mount package with exposed drain pad for thermal and electrical connection. The package features 5 terminals: 3 drain pins (D), 1 source (S), and 1 gate (G), arranged for low-inductance layout and high-current PCB routing.

Pin/Terminal	Circuit Role	Design Meaning
D1–D3	Drain (common)	High-voltage output node; electrically and thermally connected to large copper area on PCB for heat spreading.
S	Source	Reference node for gate drive and current sensing; tied to power ground plane with minimal loop inductance.
G	Gate	Control input requiring <10 V threshold; sensitive to ESD and ringing-requires local RC snubber and short trace routing.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees robustness against unclamped inductive switching events without derating or external clamping.
Low gate charge (44 nC)	Reduces driver power consumption and switching transition time, improving efficiency in 100–500 kHz converters.
Low input capacitance (1330 pF)	Minimizes Miller feedback during high dv/dt transitions, enhancing noise immunity in high-side half-bridge use.
Soft-recovery body diode	Q_rr = 4.6 µC and t_rr = 340 ns enable reduced EMI and lower diode loss in synchronous rectification and freewheeling paths.

Applications

Server PSU Primary Switch

PFC Boost Switch

Use Scenario: High-density 3 kW server power supply operating at 100–300 kHz with active clamp or LLC topology.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch handling 400 V DC bus and 16 A peak current.

Use Value: Low R_DS(on) and Q_g reduce conduction and switching losses, enabling >96% efficiency at full load.

Use Scenario: Continuous-conduction-mode (CCM) boost PFC stage in industrial AC/DC front-end.

IC Role / Device Role / Timing Role: Fast-switching boost switch with critical timing control of inductor current zero-crossing.

Use Value: Soft-recovery body diode minimizes reverse recovery loss and EMI during diode commutation at line frequency.

Industrial Motor Drive Inverter

EV Onboard Charger Switch

Use Scenario: 3-phase inverter stage in 5–10 kW variable-frequency drives for HVAC and pumps.

IC Role / Device Role / Timing Role: Half-bridge leg switch operating at 8–20 kHz with 600 V DC link.

Use Value: Avalanche rating and thermal robustness ensure reliability under motor stall and regenerative braking transients.

Use Scenario: Isolated DC/DC stage in 6.6 kW bidirectional OBC for Level 2 EV charging.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier or primary-side resonant switch.

Use Value: Low C_oss (80 pF) and C_oss,eq (182 pF) support ZVS operation across wide load range in phase-shifted full-bridge.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP60R190C6	R_DS(on) = 0.19 Ω, Q_g = 49 nC, TO-220FP package, 650 V rating	Higher thermal resistance (R_thj-amb ≈ 62 °C/W) limits power density; requires heatsink	Select when board space permits discrete heatsinking and higher peak current margin is needed.
IXFH32N60P	R_DS(on) = 0.22 Ω, Q_g = 105 nC, TO-247 package, 600 V rating	Higher gate charge increases driver complexity and switching loss; slower t_f (60 ns vs. 37 ns)	Prefer only when legacy TO-247 footprint compatibility is mandatory and thermal mass outweighs efficiency goals.

Compared with IPP60R190C6 and IXFH32N60P, STL24NM60N offers superior power density via its 1 °C/W R_thj-case, lower Q_g-to-R_DS(on) ratio, and integrated soft-recovery diode-making it optimal for compact, high-frequency, high-efficiency SMPS where PCB real estate and thermal management are constrained.

Availability

STL24NM60N is available at Aetrix Electronics and suitable for server power supplies, industrial PFC modules, motor drive inverters, and EV onboard chargers requiring stable component supply and long-term production continuity.

Supply support for STL24NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to ST's MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching in telecom, server, and industrial power conversion systems demanding low R_DS(on), low Q_g, and rugged avalanche performance.

FAQ

What is the maximum continuous drain current at case temperature of 100 °C?

The STL24NM60N supports 10 A continuous drain current at T_C = 100 °C, as specified in Table 2 of the datasheet. This rating assumes proper PCB copper area for thermal conduction and accounts for R_DS(on) increase with junction temperature. Derating is required above this point to maintain T_j ≤ 150 °C.

Does the body diode support synchronous rectification in LLC resonant converters?

Yes-the integrated body diode exhibits soft reverse recovery (t_rr = 340 ns, Q_rr = 4.6 µC at T_j = 25 °C) and low forward voltage (V_SD = 1.5 V at I_SD = 16 A), making it suitable for freewheeling and quasi-resonant operation in LLC secondary-side rectification without external Schottky replacement.

Can STL24NM60N be used in a high-side configuration without level-shifting gate drive?

No-its gate threshold voltage (2–4 V) and maximum V_GS (±25 V) require a referenced gate driver capable of floating operation. Direct high-side use with ground-referenced PWM signals will not achieve full enhancement; a dedicated isolated or bootstrap gate driver (e.g., STGAP2SIC or IRS21844) is mandatory for reliable turn-on.

Is the PowerFLAT™ 8x8 HV package RoHS-compliant and halogen-free?

Yes-ST certifies the PowerFLAT™ 8x8 HV package as ECOPACK® compliant, meeting RoHS Directive 2011/65/EU and halogen-free requirements per IEC 61249-2-21. Full compliance documentation, including material declarations and test reports, is available on ST's official website under ECOPACK® grade "ECOPACK2".

STL24NM60N Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 3.3A (Ta), 16A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 215mOhm @ 8A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 46 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1400 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 125W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerFlat™ (8x8) HV

STL24NM60N FAQ

1.How can I place an order for STL24NM60N through Aetrix?

Please submit a Request for Quotation (RFQ) for STL24NM60N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STL24NM60N reliable?

The price and inventory of STL24NM60N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STL24NM60N is usually 5 days.

3.What payment methods are accepted for STL24NM60N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STL24NM60N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STL24NM60N?

STL24NM60N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STL24NM60N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STL24NM60N?

For technical support, including STL24NM60N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STL24NM60N requirements.

6.How does Aetrix verify that STL24NM60N is sourced from the original manufacturer or authorized distributors?

All STL24NM60N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STL24NM60N meets industry standards.

7.What is the process for return or replacement of STL24NM60N?

All STL24NM60N units undergo pre-shipment inspection (PSI). If there is an issue with STL24NM60N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STL24NM60N part is unused and in its original packaging.

Return procedure for STL24NM60N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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