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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STL25N15F3

Name: STL25N15F3
Brand: STMicroelectronics
SKU: STL25N15F3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STL25N15F3

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: STL25N15F3.pdf

Description:: MOSFET N-CH 150V 25A POWERFLAT

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STL25N15F3 from STMicroelectronics is an N-channel Power MOSFET designed for high-efficiency DC-DC converters, featuring 150 V V_DSS, 0.045 Ω R_DS(on) (typ.) at V_GS = 10 V and I_D = 3 A, 6 A continuous drain current (R_thj-pcb-rated), and PowerFLAT™ (6×5) surface-mount package with 1 mm max profile.

For engineers reviewing the STL25N15F3 datasheet, STL25N15F3 pinout, STL25N15F3 application, or STL25N15F3 equivalent, key selection factors include its low R_DS(on) for reduced conduction loss, low thermal resistance (R_thj-pcb = 31.3 °C/W on FR-4), fast switching (t_r = 13 ns, t_f = 20 ns), and integrated source-drain diode with t_rr = 110 ns - critical for synchronous rectification and hard-switched SMPS designs.

Technical Context

This MOSFET employs ST's STripFET™ III process, optimized for high-voltage, medium-current switching in compact PCB layouts. Its design emphasizes die-to-footprint efficiency and low-profile thermal performance, enabling direct mounting on thermally enhanced copper areas without heatsinks in space-constrained power stages.

The device operates with gate threshold voltage V_GS(th) of 2–4 V and supports ±20 V gate drive, making it compatible with standard 10 V logic-level drivers. Its unclamped inductive switching capability (E_AS = 300 mJ) and avalanche-rated I_AS = 2.5 A support robust operation under transient overloads in flyback and buck-boost topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	150 V - supports input rails up to 120 V DC in industrial and telecom power supplies
R_DS(on) (max)	0.057 Ω @ V_GS = 10 V, I_D = 3 A - ensures ≤1.03 W conduction loss at 6 A
I_D (continuous)	6 A @ T_C = 25 °C on FR-4 (1 in², 2 oz Cu) - defines practical PCB-limited current handling
t_r/t_f	13 ns / 20 ns @ V_DD = 15 V, I_D = 3 A, R_G = 4.7 Ω - enables >1 MHz switching with minimal overlap loss
Q_g	29 nC @ V_DD = 15 V, I_D = 6 A - determines gate driver power requirement and turn-on speed
R_thj-pcb	31.3 °C/W - allows ~12.8 °C rise at 4 W dissipation on standard layout, supporting fanless operation
V_SD	1.3 V @ I_SD = 6 A, V_GS = 0 - defines forward drop and reverse recovery behavior of intrinsic body diode

Pinout & Package

STL25N15F3 uses the PowerFLAT™ (6×5) package: a 6 mm × 5 mm, 5-pin, exposed-drain, surface-mount package with 1 mm maximum height and no leads. The drain is connected to the bottom thermal pad for optimal PCB heat transfer.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Low-side reference node; connects to ground or output return path in buck/synchronous rectifier
Pin 2 (Gate)	Control input (G)	High-impedance MOS gate requiring <30 nC charge for full enhancement; sensitive to ESD
Pin 3 (Drain)	Power output (D)	Exposed thermal pad - must be soldered to large copper pour for thermal management
Pin 4 (Source)	Source terminal (S)	Second source connection to reduce bondwire inductance and improve current sharing
Pin 5 (Source)	Source terminal (S)	Third source connection for low-inductance source return in high-dI/dt applications

Key Features

Feature	Design Value
STripFET™ III technology	Enables 0.045 Ω R_DS(on) at 150 V rating - 25% lower on-resistance vs prior generation for same die size
PowerFLAT™ (6×5) package	1 mm max height and exposed drain pad - reduces thermal resistance by 40% vs SO-8 in identical PCB area
Low Q_gd/Q_g ratio	14.6/29 = 0.50 - improves Miller immunity and enables stable operation with moderate gate resistors
Fast body diode	t_rr = 110 ns, Q_rr = 497 nC - minimizes reverse recovery loss in synchronous rectification and LLC resonant converters
Avalanche ruggedness	E_AS = 300 mJ - withstands single-pulse inductive energy without failure in non-clamped topologies

Applications

Telecom DC-DC Converters

Industrial Motor Drives

Use Scenario: 48 V input, 12 V/5 A isolated forward converter in base station power modules.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier MOSFET operating at 300 kHz with zero-voltage switching assist.

Use Value: 0.045 Ω R_DS(on) reduces conduction loss by 1.6 W vs 0.1 Ω alternative, improving efficiency from 92.1% to 93.4% at full load.

Use Scenario: Half-bridge high-side switch in 24 V BLDC gate driver for HVAC blowers.

IC Role / Device Role / Timing Role: High-side N-channel switch driven via bootstrap circuit; requires low Q_g and robust dV/dt immunity.

Use Value: 29 nC total gate charge enables clean 100 ns turn-on with 10 Ω gate resistor, reducing shoot-through risk during commutation.

LED Driver Power Stages

Automotive Body Control Modules

Use Scenario: Buck LED driver for commercial lighting (36 V input, 24 V/1.5 A output).

IC Role / Device Role / Timing Role: Main switching transistor controlling PWM dimming at 1 kHz with 100% duty cycle capability.

Use Value: 6 A continuous rating and 24 A pulsed current support allow 3× overcurrent headroom for inrush limiting and short-circuit protection.

Use Scenario: Load switch for 12 V accessory rail in BCM, replacing mechanical relay.

IC Role / Device Role / Timing Role: Low-side power switch controlling solenoid valves and small motors with PWM control.

Use Value: 1.3 V V_SD and fast t_rr ensure minimal voltage overshoot during inductive turn-off, eliminating need for external flyback diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IPP050N15N3	R_DS(on) = 0.050 Ω (typ), Q_g = 34 nC, TO-220FP package	Requires heatsink; higher profile and thermal mass limits high-frequency use	Select when board space allows through-hole mounting and thermal budget permits higher R_thj-amb
Vishay SIHF15N15A	R_DS(on) = 0.075 Ω (max), TO-220AB, 150 V, 15 A (T_C)	Higher on-resistance increases conduction loss; rated for higher current but larger footprint	Select when higher ID rating is prioritized over efficiency and PCB area constraints

Compared with IPP050N15N3 and SIHF15N15A, STL25N15F3 delivers superior power density and thermal performance per mm² due to its PowerFLAT™ package and lower R_DS(on), making it optimal for compact, high-efficiency DC-DC stages where PCB real estate and thermal management are critical.

Availability

STL25N15F3 is available at Aetrix Electronics and suitable for telecom DC-DC converters, industrial motor drives, and LED driver power stages requiring stable component supply and long-term production continuity.

Supply support for STL25N15F3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, delivering automotive, industrial, and power management solutions with emphasis on energy efficiency and system integration.

The STL25N15F3 belongs to ST's STripFET™ III Power MOSFET product line, engineered specifically for high-frequency, high-efficiency switching in space-constrained power conversion systems such as server VRMs and telecom rectifiers.

FAQ

Is STL25N15F3 suitable for synchronous rectification in LLC resonant converters?

Yes. Its fast body diode (t_rr = 110 ns, Q_rr = 497 nC) and low R_DS(on) (0.045 Ω) enable efficient synchronous rectification at 300–500 kHz. The PowerFLAT™ package's low inductance and thermal performance further support stable operation under high dI/dt conditions typical in LLC secondary-side switching.

What is the recommended PCB layout for thermal management of STL25N15F3?

ST recommends soldering the exposed drain pad to ≥1 in² (645 mm²) of 2 oz copper on the primary layer, connected via ≥6 thermal vias (0.3 mm diameter) to inner/ground planes. Minimum trace width for source pins is 1.5 mm to handle 6 A continuous current with ≤20 °C rise.

Does STL25N15F3 support 3.3 V gate drive?

No. With V_GS(th) = 2–4 V and R_DS(on) specified only at V_GS = 10 V, the device is not fully enhanced at 3.3 V. At 3.3 V, R_DS(on) exceeds 0.5 Ω - unsuitable for power switching. A gate driver generating ≥8 V (preferably 10 V) is required for low-loss operation.

Is STL25N15F3 qualified for automotive applications?

No. STL25N15F3 is not AEC-Q101 qualified and lacks automotive-grade screening, temperature range extension (−40 to 175 °C), or stress test validation. It is intended for industrial and telecom equipment. For automotive use, ST recommends AEC-Q101 qualified alternatives like STL10DN15L.

STL25N15F3 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ III

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 25A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 57mOhm @ 3A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 29 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1300 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 80W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerFlat™ (5x6)

STL25N15F3 FAQ

1.How can I place an order for STL25N15F3 through Aetrix?

Please submit a Request for Quotation (RFQ) for STL25N15F3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STL25N15F3 reliable?

The price and inventory of STL25N15F3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STL25N15F3 is usually 5 days.

3.What payment methods are accepted for STL25N15F3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STL25N15F3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STL25N15F3?

STL25N15F3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STL25N15F3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STL25N15F3?

For technical support, including STL25N15F3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STL25N15F3 requirements.

6.How does Aetrix verify that STL25N15F3 is sourced from the original manufacturer or authorized distributors?

All STL25N15F3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STL25N15F3 meets industry standards.

7.What is the process for return or replacement of STL25N15F3?

All STL25N15F3 units undergo pre-shipment inspection (PSI). If there is an issue with STL25N15F3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STL25N15F3 part is unused and in its original packaging.

Return procedure for STL25N15F3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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