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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STL25N60M2-EP

Name: STL25N60M2-EP
Brand: STMicroelectronics
SKU: STL25N60M2-EP
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STL25N60M2-EP

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: STL25N60M2-EP.pdf

Description:: MOSFET N-CH 600V 16A PWRFLAT HV

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Product details

Overview

STL25N60M2-EP from STMicroelectronics is an N-channel 600 V, 16 A Power MOSFET in PowerFLAT™ 8x8 HV package, featuring 0.205 Ω max R_DS(on), 29 nC total gate charge, and 7 µJ turn-off energy at 400 V/2 A. It employs MDmesh™ M2 EP technology for ultra-low switching losses and is engineered for very high-frequency DC-DC converters operating above 150 kHz.

For engineers reviewing the STL25N60M2-EP datasheet, STL25N60M2-EP pinout, STL25N60M2-EP application, or STL25N60M2-EP equivalent, key selection criteria include avalanche ruggedness (180 mJ E_AS), Zener-protected gate, 50 V/ns MOSFET dv/dt ruggedness, and optimized C_oss profile for soft-switching topologies.

Technical Context

This device uses a strip-based MDmesh™ M2 EP vertical structure to simultaneously reduce R_DS(on) and output capacitance-C_oss typ. 56 pF and C_oss,eq 255 pF across 0–480 V-enabling high-efficiency operation in resonant and phase-shifted full-bridge converters.

Its gate threshold voltage (3.25–4.75 V) and low intrinsic gate resistance (7 Ω) support clean, fast switching with minimal external drive requirements; the integrated source-drain diode exhibits 360 ns reverse recovery time and 5 µC Q_rr at 150 °C, enabling synchronous rectification in high-density SMPS designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS Rating	600 V - supports 400 V bus designs with 50% derating margin for transient overvoltage
R_DS(on) max	0.205 Ω @ 10 V V_GS, 8 A - enables <1.3 W conduction loss at 16 A continuous current
Q_g	29 nC - reduces gate driver power demand and allows use of compact, low-cost drivers
E_off	7 µJ @ 400 V, 2 A - cuts switching loss by >40% vs. legacy 600 V MOSFETs in hard-switched PFC stages
C_oss,eq	255 pF - minimizes stored energy (E_OSS = ½·C_oss,eq·V²) for zero-voltage switching (ZVS) initiation
T_j max	150 °C - supports high-power density thermal design with R_thj-case = 1 °C/W
Avalanche Energy	180 mJ single-pulse - ensures robustness against unclamped inductive transients without snubbers

Pinout & Package

STL25N60M2-EP is housed in a surface-mount PowerFLAT™ 8x8 HV package with exposed drain pad for enhanced thermal performance and low-inductance layout. The 5-pin configuration supports high-current routing while minimizing parasitic inductance in high-dI/dt applications.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current path collector	Exposed copper pad on bottom - must be soldered to large PCB copper area for thermal and electrical return
Gate (G)	Control input	Low-impedance 7 Ω intrinsic resistance enables fast, stable switching with minimal ringing
Source (S1)	Driver reference node	Internal connection to gate driver IC ground - critical for accurate gate control loop stability
Source (S2)	Power return path	Dedicated high-current return - separates power and signal return paths to suppress ground bounce
Drain (D)	High-side switch output	Shared with main drain pad - provides low-inductance path to output capacitor in half-bridge configurations

Key Features

Feature	Design Value
MDmesh™ M2 EP technology	Optimized vertical cell structure delivering 0.184 Ω typ. R_DS(on) with 56 pF C_oss - balances conduction and switching loss trade-offs
Zener-protected gate	±25 V V_GS rating with integrated gate oxide protection - eliminates need for external gate clamping diodes
100% avalanche tested	Each unit validated to 3.5 A repetitive avalanche current and 180 mJ single-pulse energy - guarantees ruggedness in real-world fault conditions
Very low turn-off switching losses	7 µJ E_off at 400 V/2 A - enables >95% efficiency in 200–500 kHz LLC resonant converters
Excellent dv/dt ruggedness	50 V/ns MOSFET dv/dt rating - prevents false turn-on in high-speed bridge legs without complex gate resistors

Applications

Server VRM

Industrial SMPS

Use Scenario: 48 V–12 V point-of-load conversion in AI accelerator servers requiring >90% efficiency at 300 kHz switching frequency.

IC Role / Device Role / Timing Role: High-side synchronous rectifier in multiphase buck converter, driven by dedicated gate controller.

Use Value: Low Q_g (29 nC) and C_oss,eq (255 pF) enable precise dead-time control and ZVS operation, reducing system-level thermal load by 12 W per phase.

Use Scenario: Primary-side switch in 1 kW telecom rectifier with active clamp forward topology operating at 250 kHz.

IC Role / Device Role / Timing Role: Main power switch handling 16 A continuous drain current with 50 V/ns dv/dt immunity during clamp transitions.

Use Value: 180 mJ E_AS and 150 °C T_j rating allow reliable operation under repeated line surge events without derating.

EV Onboard Charger

Renewable Energy Inverter

Use Scenario: Secondary-side synchronous rectifier in bidirectional OBC AC/DC stage, switching at 350 kHz with SiC gate driver.

IC Role / Device Role / Timing Role: Fast-recovery body diode (360 ns trr) used for freewheeling during dead time in phase-shifted full-bridge.

Use Value: Low Q_rr (5 µC) and I_RRM (28 A) minimize reverse recovery loss and EMI generation compared to standard silicon diodes.

Use Scenario: Auxiliary DC-DC supply in 10 kW solar string inverter, powering gate drivers and sensors from 400 V DC bus.

IC Role / Device Role / Timing Role: Primary switch in flyback converter operating at 400 kHz with tight regulation under wide input range (200–800 V).

Use Value: Stable V_GS(th) (3.25–4.75 V) and low R_DS(on) tempco ensure consistent startup and regulation across -40 to +125 °C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-frequency power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW20N60M2	TO-247 package, higher R_DS(on) (0.23 Ω), same MDmesh™ M2 EP die	Requires heatsink; unsuitable for ultra-thin board designs	Select when thermal budget permits discrete heatsinking and layout space exceeds 15 mm²
IXFH20N60P	Planar MOSFET, 0.28 Ω R_DS(on), no Zener gate protection, lower dv/dt ruggedness (25 V/ns)	Lacks integrated avalanche robustness and gate protection; needs external clamping	Select only for cost-sensitive, non-safety-critical 100–150 kHz applications with controlled EMI environment

Compared with STW20N60M2 and IXFH20N60P, STL25N60M2-EP delivers superior power density via its PowerFLAT™ 8x8 HV package, lowest E_off (7 µJ), and guaranteed Zener gate protection-making it the preferred choice for space-constrained, high-reliability >150 kHz converters where board-level ruggedness is mandatory.

Availability

STL25N60M2-EP is available at Aetrix Electronics and suitable for server VRMs, industrial SMPS, EV onboard chargers, and renewable energy inverters requiring stable component supply and long-term production continuity.

Supply support for STL25N60M2-EP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

This device belongs to ST's MDmesh™ M2 EP high-voltage MOSFET product line, developed specifically for high-frequency, high-efficiency power conversion in next-generation SMPS, PFC, and resonant topologies.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STL25N60M2-EP supports 10 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS10759 Rev 5. This derating from the 16 A rating at 25 °C reflects thermal limitations of the PowerFLAT™ 8x8 HV package and ensures safe operation within the SOA boundary at elevated temperatures.

Does this MOSFET include integrated gate protection?

Yes, the STL25N60M2-EP features Zener-protected gate oxide, rated for ±25 V gate-source voltage. This integrated protection eliminates the need for external gate clamping diodes in typical gate driver circuits, simplifying layout and improving reliability in high-noise industrial environments.

Can this device be used in zero-voltage switching (ZVS) topologies?

Yes-the device's low C_oss,eq (255 pF) and low E_OSS (8 µJ at 400 V) make it well-suited for ZVS operation in LLC and phase-shifted full-bridge converters. Its fast turn-off (61 ns t_d(off)) and low Q_gd/Q_gs ratio further support precise timing control required for soft-switching transitions.

What is the thermal resistance from junction to PCB?

The junction-to-PCB thermal resistance (R_thj-pcb) is 45 °C/W when mounted on a 1-inch² FR-4 board with 2 oz copper, per Table 2 of DS10759 Rev 5. This value assumes standard thermal vias under the exposed drain pad and is critical for estimating board-level temperature rise in compact layouts.

STL25N60M2-EP Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ M2-EP

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 205mOhm @ 8A, 10V

Vgs(th) (Max) @ Id:: 4.75V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 29 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1090 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerFlat™ (8x8) HV

STL25N60M2-EP FAQ

1.How can I place an order for STL25N60M2-EP through Aetrix?

Please submit a Request for Quotation (RFQ) for STL25N60M2-EP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STL25N60M2-EP reliable?

The price and inventory of STL25N60M2-EP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STL25N60M2-EP is usually 5 days.

3.What payment methods are accepted for STL25N60M2-EP?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STL25N60M2-EP transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STL25N60M2-EP?

STL25N60M2-EP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STL25N60M2-EP order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STL25N60M2-EP?

For technical support, including STL25N60M2-EP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STL25N60M2-EP requirements.

6.How does Aetrix verify that STL25N60M2-EP is sourced from the original manufacturer or authorized distributors?

All STL25N60M2-EP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STL25N60M2-EP meets industry standards.

7.What is the process for return or replacement of STL25N60M2-EP?

All STL25N60M2-EP units undergo pre-shipment inspection (PSI). If there is an issue with STL25N60M2-EP, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STL25N60M2-EP part is unused and in its original packaging.

Return procedure for STL25N60M2-EP:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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