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STMicroelectronics STL26N60DM6

Name: STL26N60DM6
Brand: STMicroelectronics
SKU: STL26N60DM6
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STL26N60DM6

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: STL26N60DM6.pdf

Description:: MOSFET N-CH 600V 15A PWRFLAT HV

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Product details

Overview

STL26N60DM6 from STMicroelectronics is a high-voltage N-channel Power MOSFET in the MDmesh DM6 series, featuring 600 V V_DS, 215 mΩ R_DS(on) max at 10 V V_GS, and 15 A continuous drain current at T_C = 25 °C. It integrates a fast-recovery body diode with Q_rr = 0.35 µC (T_j = 25 °C) and trr = 100 ns, optimized for ZVS phase-shift converters and high-efficiency bridge topologies.

For engineers reviewing the STL26N60DM6 datasheet, STL26N60DM6 pinout, STL26N60DM6 application, or STL26N60DM6 equivalent, key selection criteria include dv/dt ruggedness (100 V/ns), low gate charge (Q_g = 24 nC), C_oss,eq = 157 pF, avalanche rating (E_AS = 360 mJ), and thermal resistance (R_thj-case = 1.14 °C/W).

Technical Context

This MOSFET employs ST's MDmesh DM6 silicon technology, delivering reduced Q_rr and trr versus prior MDmesh generations while maintaining high V_DS rating and low R_DS(on) per die area. Its Zener-protected gate enables robust ±25 V V_GS tolerance and stable threshold voltage (V_GS(th) = 3.25–4.75 V).

The device supports high-speed switching with t_d(on) = 13 ns, t_f = 8 ns, and intrinsic gate resistance R_G = 4.8 Ω. Its 100% avalanche-tested construction ensures reliability under unclamped inductive load conditions up to I_AR = 4 A and E_AS = 360 mJ.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Withstands DC bus voltages up to 480 V in ZVS operation with 100 V/ns dv/dt ruggedness.
R_DS(on) max	215 mΩ at V_GS = 10 V, I_D = 7.5 A - Enables low conduction loss in 15 A continuous power stages.
Q_g	24 nC - Reduces driver power requirement and switching transition time in high-frequency converters.
Q_rr	0.35 µC (T_j = 25 °C) - Minimizes recovery loss and EMI in hard- and soft-switching topologies.
R_thj-case	1.14 °C/W - Supports >90 W dissipation at ΔT = 100 °C with direct heatsink mounting on PowerFLAT 8x8 HV exposed drain pad.
E_AS	360 mJ - Guarantees single-pulse unclamped inductive switching robustness without external snubbing.

Pinout & Package

STL26N60DM6 uses the PowerFLAT 8x8 HV package - a surface-mount, thermally enhanced leadless package with an exposed drain pad (pins 5, 2, 3, 4 share drain/source connectivity) and isolated gate terminal.

Pin/Terminal	Circuit Role	Design Meaning
Drain (5)	Main high-side power path connection	Exposed copper pad (pin 5) serves as primary heat sink interface and carries full drain current.
Gate (1)	Control input for channel modulation	Isolated signal terminal requiring <4.8 Ω gate drive impedance to control 24 nC charge efficiently.
Driver source (2)	Reference node for gate driver return	Separate source pin for Kelvin sensing improves gate control accuracy during high di/dt switching.
Power source (3, 4)	Main current return path	Parallel source terminals reduce conduction loss and improve current sharing in high-current PCB layouts.

Key Features

Feature	Design Value
Fast-recovery body diode	trr = 100 ns and Qrr = 0.35 µC at 25 °C enable efficient synchronous rectification in LLC and phase-shifted full-bridge designs.
Low R_DS(on) per area	175 mΩ typ. at V_GS = 10 V delivers higher power density than previous MDmesh DM2/DM3 generations in same footprint.
Zener-protected gate	Integrated gate oxide protection sustains ±25 V V_GS without external clamping, reducing BOM count in isolated gate driver circuits.
100% avalanche tested	Each unit validated for E_AS = 360 mJ ensures field reliability in unclamped inductive switching applications like motor drives.
High dv/dt ruggedness	Rated for 100 V/ns - prevents false turn-on in high-noise half-bridge configurations with fast-rising V_DS.

Applications

Industrial Motor Drives

Server & Telecom SMPS

Use Scenario: Three-phase inverter stage in 1–3 kW servo drives operating at 20–50 kHz switching frequency.

IC Role / Device Role / Timing Role: High-side N-channel switch in IGBT/MOSFET-based six-pack inverter modules.

Use Value: Low Q_rr and high dv/dt immunity minimize shoot-through risk and reduce snubber losses by >15% vs legacy 600 V MOSFETs.

Use Scenario: Primary-side switch in 80+ Titanium-certified 1.5 kW telecom rectifiers using phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: ZVS-capable main switch enabling zero-voltage turn-on across full load range.

Use Value: C_oss,eq = 157 pF and Q_g = 24 nC allow reliable ZVS down to 20% load, improving efficiency by 0.8% at 50% load.

EV Onboard Chargers

Renewable Energy Inverters

Use Scenario: AC/DC PFC and DC/DC isolation stage in bi-directional 11 kW OBCs with SiC/GaN hybrid control.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier and isolation switch in dual-active-bridge architecture.

Use Value: Fast-recovery diode (trr = 170 ns @ T_j = 150 °C) enables clean commutation during reverse energy transfer without external freewheeling diodes.

Use Scenario: String-level DC/AC conversion in 5–10 kW residential solar inverters with transformerless topology.

IC Role / Device Role / Timing Role: High-voltage bridge leg switch handling 600 V DC link with bipolar voltage stress.

Use Value: 100% avalanche rating and R_thj-case = 1.14 °C/W support 15-year field life under partial shading and grid fault conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW60R099CP	650 V, 99 mΩ R_DS(on), TO-247 package, no integrated fast diode (external diode required)	Higher conduction efficiency but larger footprint and no body-diode optimization for ZVS	Prefer when lowest R_DS(on) dominates and thermal design accommodates TO-247 mechanical constraints
IXFH32N60P	600 V, 190 mΩ R_DS(on), TO-247 package, standard recovery diode (Q_rr ≈ 2.1 µC)	Lower cost but significantly higher recovery loss limits usable frequency to ≤30 kHz	Prefer for non-ZVS hard-switched applications where gate drive simplicity outweighs efficiency targets

Compared with IPW60R099CP and IXFH32N60P, STL26N60DM6 uniquely balances low R_DS(on), ultra-low Q_rr, and surface-mount thermal performance-making it optimal for compact, high-frequency, ZVS-enabled power stages where board space and EMI are critical.

Availability

STL26N60DM6 is available at Aetrix Electronics and suitable for industrial motor drives, server & telecom SMPS, and EV onboard chargers requiring stable component supply, long-lifecycle assurance, and traceable sourcing.

Supply support for STL26N60DM6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

This device belongs to ST's MDmesh DM6 high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-frequency resonant and soft-switching converters demanding low Q_rr, high dv/dt immunity, and avalanche ruggedness.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STL26N60DM6 supports 9.5 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS12852 Rev 3. This derating reflects thermal limitations of the PowerFLAT 8x8 HV package under sustained high-power operation without forced cooling.

Does this MOSFET require a negative gate voltage for reliable turn-off?

No. The device has a gate threshold voltage range of 3.25–4.75 V and is fully controllable with 0 V to 10 V gate drive. A negative gate voltage is not required; however, driving to 0 V (not floating) ensures robust turn-off under high dv/dt conditions.

Can the body diode be used for synchronous rectification in a flyback converter?

Yes - its fast-recovery characteristics (trr = 100 ns, Q_rr = 0.35 µC at 25 °C) make it suitable for synchronous rectification in medium-frequency flyback designs up to 200 kHz, provided layout minimizes parasitic inductance to avoid voltage overshoot during diode commutation.

What is the recommended PCB layout for thermal performance?

Mount the exposed drain pad (pin 5) directly to a minimum 25 mm² copper pour with ≥2 oz Cu thickness and ≥6 thermal vias (0.3 mm diameter, 0.8 mm pitch) connecting to internal ground or power planes. Per DS12852, this achieves R_thj-pcb ≈ 45 °C/W on FR-4.

STL26N60DM6 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ DM6

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 215mOhm @ 7.5A, 10V

Vgs(th) (Max) @ Id:: 4.75V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 24 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 940 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerFlat™ (8x8) HV

STL26N60DM6 FAQ

1.How can I place an order for STL26N60DM6 through Aetrix?

Please submit a Request for Quotation (RFQ) for STL26N60DM6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STL26N60DM6 reliable?

The price and inventory of STL26N60DM6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STL26N60DM6 is usually 5 days.

3.What payment methods are accepted for STL26N60DM6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STL26N60DM6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STL26N60DM6?

STL26N60DM6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STL26N60DM6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STL26N60DM6?

For technical support, including STL26N60DM6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STL26N60DM6 requirements.

6.How does Aetrix verify that STL26N60DM6 is sourced from the original manufacturer or authorized distributors?

All STL26N60DM6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STL26N60DM6 meets industry standards.

7.What is the process for return or replacement of STL26N60DM6?

All STL26N60DM6 units undergo pre-shipment inspection (PSI). If there is an issue with STL26N60DM6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STL26N60DM6 part is unused and in its original packaging.

Return procedure for STL26N60DM6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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