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STMicroelectronics STL26N65DM2

Name: STL26N65DM2
Brand: STMicroelectronics
SKU: STL26N65DM2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STL26N65DM2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: STL26N65DM2.pdf

Description:: MOSFET N-CH 650V 20A PWRFLAT HV

Quantity:: RFQ Add To RFQ list

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Inventory:8,059

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Product details

Overview

STL26N65DM2 from STMicroelectronics is a high-voltage N-channel Power MOSFET in the MDmesh™ DM2 series, featuring 650 V V_DS, 0.206 Ω R_DS(on) max at 10 V V_GS, 20 A continuous drain current, 140 W power dissipation, and fast-recovery body diode with 100 ns trr at 25 °C. It serves as a primary switching device in high-efficiency bridge and ZVS phase-shift converters.

For engineers reviewing the STL26N65DM2 datasheet, STL26N65DM2 pinout, STL26N65DM2 application, or STL26N65DM2 equivalent, key selection criteria include avalanche ruggedness (530 mJ EAS), dv/dt immunity (50 V/ns), low gate charge (35.5 nC), and Zener-protected gate-source integrity.

Technical Context

This MOSFET employs ST's MDmesh™ DM2 superjunction technology to achieve simultaneous low R_DS(on) (0.182 Ω typ.) and ultra-low Q_rr (0.365 µC at 25 °C). Its fast-recovery body diode enables hard-switched and resonant topologies without external freewheeling diodes.

The integrated back-to-back gate-source Zener diodes provide ±30 V breakdown protection, eliminating need for external clamping. Thermal resistance junction-to-case is 0.89 °C/W, supporting high-power density PCB layouts with direct heatsinking via the exposed drain pad.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - supports 400 V bus designs with 30% margin for transient overvoltage
R_DS(on) max	0.206 Ω - limits conduction loss to ≤82 W at 20 A, enabling compact thermal design
Q_g	35.5 nC - reduces gate drive power and enables use of low-current drivers (e.g., 1 A peak)
trr	100 ns at 25 °C - minimizes switching loss and EMI in 100–300 kHz converters
EAS	530 mJ - withstands unclamped inductive energy without failure under typical ZVS conditions
dv/dt ruggedness	50 V/ns - ensures reliable operation during fast voltage transients in half-bridge configurations
V_(BR)GSO	±30 V - protects gate oxide from ESD and overvoltage events without external components

Pinout & Package

Delivered in PowerFLAT™ 8x8 HV package with exposed drain pad for thermal and electrical connection. The 5-terminal layout supports high-current source return paths and low-inductance gate routing.

Pin/Terminal	Circuit Role	Design Meaning
Drain (5)	Main power output terminal	Exposed copper pad - must be soldered to large PCB copper area for thermal and current handling
Gate (1)	Control input	Low-capacitance node (C_iss = 1480 pF) requiring controlled slew-rate drive to limit ringing
Driver source (2)	Reference for gate driver IC	Separate Kelvin source pin - enables accurate gate voltage sensing and eliminates source inductance effects
Power source (3, 4)	Main current return path	Dual-source terminals reduce parasitic inductance and improve current sharing in high-frequency switching

Key Features

Feature	Design Value
Fast-recovery body diode	Q_rr = 0.365 µC and trr = 100 ns enable zero-voltage switching without external diode
Extremely low gate charge	Q_g = 35.5 nC reduces driver losses and allows smaller gate resistors (e.g., 4.7 Ω)
100% avalanche tested	Each unit validated for 530 mJ single-pulse avalanche energy at T_j = 25 °C
Zener-protected gate	Integrated ±30 V gate-source Zener diodes eliminate need for external TVS clamps
High dv/dt ruggedness	Rated 50 V/ns - prevents spurious turn-on in high-side bridge configurations

Applications

Industrial Motor Drives

Server PSU LLC Resonant Converters

Use Scenario: 3-phase inverter stage in 5–15 kW servo drives operating at 20–50 kHz switching frequency.

IC Role / Device Role / Timing Role: High-side/low-side switching element in IGBT/MOSFET-based inverter leg with active freewheeling.

Use Value: Low Q_rr and soft recovery minimize shoot-through risk and reduce snubber losses by >35% vs. standard 650 V MOSFETs.

Use Scenario: Primary-side synchronous rectifier and resonant switch in 1–3 kW server power supplies using LLC topology.

IC Role / Device Role / Timing Role: ZVS-capable main switch with integrated body diode conducting reverse recovery current during dead-time.

Use Value: 100 ns trr and 0.206 Ω R_DS(on) enable >96% full-load efficiency while maintaining <150 °C junction temperature.

Solar Microinverters

EV On-Board Chargers (OBC)

Use Scenario: DC-AC H-bridge in 300–600 W microinverters interfacing with single PV panel.

IC Role / Device Role / Timing Role: Full-bridge switching transistor with bidirectional current capability enabled by robust body diode.

Use Value: 50 V/ns dv/dt rating ensures stable operation during rapid bus voltage transitions caused by MPPT-induced current steps.

Use Scenario: Primary-side switch in 3.3–6.6 kW bidirectional OBC AC/DC stage operating at 100–200 kHz.

IC Role / Device Role / Timing Role: High-reliability switching device subjected to repeated unclamped inductive stress during fault events.

Use Value: 530 mJ EAS rating provides margin against inductive energy spikes during grid fault interruption without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXTH26N65X2	R_DS(on) = 0.22 Ω, Q_g = 42 nC, no integrated Zener protection	Requires external gate clamp; higher conduction loss increases thermal load at 20 A	Preferred where gate drive circuit already includes TVS and board space is constrained
IPW65R041CFD7	R_DS(on) = 0.041 Ω, Q_rr = 0.29 µC, TO-247-4 package	Larger footprint and higher cost; superior conduction but less optimized for ZVS timing control	Selected when lowest R_DS(on) dominates over layout density and gate drive simplicity

Compared with IXTH26N65X2 and IPW65R041CFD7, STL26N65DM2 offers optimal balance of low Q_g, integrated gate protection, and fast diode recovery-making it uniquely suited for compact, high-frequency ZVS designs where gate drive simplicity and reliability are critical.

Availability

STL26N65DM2 is available at Aetrix Electronics and suitable for industrial motor drives, server PSU LLC resonant converters, and solar microinverters requiring stable component supply and long-term production continuity.

Supply support for STL26N65DM2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for industrial, automotive, and consumer markets.

This device belongs to the MDmesh™ DM2 high-voltage MOSFET product line, engineered specifically for high-efficiency, high-frequency switched-mode power supplies and resonant converters demanding low Q_rr and rugged avalanche performance.

FAQ

What is the maximum safe operating junction temperature for STL26N65DM2?

The absolute maximum operating junction temperature is 150 °C, as defined in Table 1 of DS12623. Continuous operation above this threshold risks permanent degradation of the silicon die and bond wires. Derating is required above 100 °C case temperature, where ID drops to 12.6 A per the datasheet's thermal derating curve.

Does STL26N65DM2 require an external gate resistor for stability?

Yes - a gate resistor (typically 4.7 Ω) is required to dampen oscillation and control switching speed. The datasheet specifies td(on)/td(off) values measured with RG = 4.7 Ω, and omitting it causes excessive ringing due to interaction between Q_g (35.5 nC), C_iss (1480 pF), and PCB trace inductance.

Can STL26N65DM2 replace older MDmesh™ DM1 devices in existing designs?

Yes - it is a direct drop-in replacement for STL26N65DM1 with identical pinout, package, and voltage rating. Key improvements include 15% lower R_DS(on), 25% lower Q_rr, and enhanced dv/dt ruggedness, enabling higher efficiency without layout changes.

Is the PowerFLAT™ 8x8 HV package lead-free and RoHS-compliant?

Yes - the device carries ECOPACK®2 compliance, meeting RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. The package uses matte tin plating on copper leads and halogen-free molding compound, verified per ST's published environmental documentation.

STL26N65DM2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ DM2

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 206mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 35.5 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1480 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerFlat™ (8x8) HV

STL26N65DM2 FAQ

1.How can I place an order for STL26N65DM2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STL26N65DM2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STL26N65DM2 reliable?

The price and inventory of STL26N65DM2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STL26N65DM2 is usually 5 days.

3.What payment methods are accepted for STL26N65DM2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STL26N65DM2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STL26N65DM2?

STL26N65DM2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STL26N65DM2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STL26N65DM2?

For technical support, including STL26N65DM2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STL26N65DM2 requirements.

6.How does Aetrix verify that STL26N65DM2 is sourced from the original manufacturer or authorized distributors?

All STL26N65DM2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STL26N65DM2 meets industry standards.

7.What is the process for return or replacement of STL26N65DM2?

All STL26N65DM2 units undergo pre-shipment inspection (PSI). If there is an issue with STL26N65DM2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STL26N65DM2 part is unused and in its original packaging.

Return procedure for STL26N65DM2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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