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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STL26NM60N

Name: STL26NM60N
Brand: STMicroelectronics
SKU: STL26NM60N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STL26NM60N

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: STL26NM60N.pdf

Description:: MOSFET N-CH 600V 19A POWERFLAT

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STL26NM60N from STMicroelectronics is an N-channel 600 V, 19 A Power MOSFET in PowerFLAT™ 8x8 HV package, featuring 0.160 Ω typ. R_DS(on), 60 nC total gate charge, and 100% avalanche tested. It serves as a high-voltage switching device in offline SMPS, PFC stages, and industrial motor drives requiring high efficiency and ruggedness.

For engineers reviewing the STL26NM60N datasheet, STL26NM60N pinout, STL26NM60N application, or STL26NM60N equivalent, key selection criteria include its 600 V V_DS, low 1 Ω/W junction-to-case thermal resistance, 15 V/ns dv/dt capability, and integrated source-drain diode with 370 ns trr at 150 °C - all critical for hard-switched and resonant converter designs.

Technical Context

This MDmesh™ II MOSFET uses a vertical strip layout to minimize conduction and switching losses simultaneously. Its 1800 pF C_iss, 6 pF C_rss, and 310 pF C_oss,eq enable fast, controllable turn-on/turn-off with reduced EMI generation in high-frequency topologies.

The device integrates a robust body diode rated for 19 A continuous and 76 A pulsed current, with 5.8 µC Q_rr and 31.6 A I_RRM under standard test conditions (V_DD = 100 V, di/dt = 100 A/µs), supporting ZVS-capable flyback and LLC designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports universal AC input (85–265 VAC) offline converters without derating
R_DS(on) typ.	0.160 Ω @ V_GS = 10 V - enables <1.5 W conduction loss at 10 A, reducing heatsink requirements
Q_g	60 nC - allows efficient gate driving with standard 1-A drivers at 100–300 kHz switching
T_j max	150 °C - ensures reliable operation in sealed industrial enclosures with limited airflow
R_thj-case	1 °C/W - permits direct mounting to copper-clad heatsinks without thermal interface material
dv/dt rating	15 V/ns - withstands fast voltage transients in bridge-leg configurations without spurious turn-on
E_AS	400 mJ - sustains unclamped inductive switching events in motor control and relay drive circuits

Pinout & Package

STL26NM60N is housed in a surface-mount PowerFLAT™ 8x8 HV package with exposed drain pad (D) on the bottom and three terminals on the top edge: Gate (G), Source (S), and Drain (D). The package provides low-inductance power routing and enhanced thermal dissipation via soldered copper area.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control terminal	Accepts 0–10 V logic-level drive; 2.8 Ω gate input resistance minimizes ringing with standard PCB trace lengths
S	Source reference node	Common return path for load current and gate driver ground; tied to PCB ground plane for noise immunity
D	Drain power terminal	High-side connection to DC bus; bottom-exposed pad must be soldered to ≥1 inch² 2 oz Cu for R_thj-amb = 45 °C/W

Key Features

Feature	Design Value
100% avalanche tested	Guarantees single-pulse energy handling up to 400 mJ without parameter shift or failure
Low C_rss (6 pF)	Reduces Miller-induced turn-on risk during high dv/dt commutation in half-bridge configurations
MDmesh™ II vertical structure	Delivers 30% lower R_DS(on) × Q_g figure-of-merit vs. first-gen MDmesh devices
PowerFLAT™ 8x8 HV footprint	Enables >2× current density vs. TO-220 while maintaining 1 mm creepage distance for 600 V isolation

Applications

Server PSU Primary Switch

Industrial PFC Boost Stage

Use Scenario: High-density 1U server power supply operating at 100–300 kHz with active clamp forward topology.

IC Role / Device Role / Timing Role: Main switch handling 600 V DC link voltage and 15 A peak primary current.

Use Value: 0.160 Ω R_DS(on) and 60 nC Q_g reduce combined conduction + switching losses by 22% vs. comparable 650 V Si MOSFETs.

Use Scenario: Three-phase industrial PFC rectifier with 400 V DC output and >5 kW power level.

IC Role / Device Role / Timing Role: Fast-switching boost switch managing 19 A RMS current and 15 V/ns transient stress.

Use Value: 15 V/ns dv/dt rating and 100% avalanche testing ensure reliability under line surge and phase imbalance conditions.

Solar Microinverter Half-Bridge

EV Onboard Charger DC-DC Stage

Use Scenario: Transformerless microinverter with split-phase grid tie and 600 V DC input from PV string.

IC Role / Device Role / Timing Role: High-side switch in interleaved half-bridge operating at 150 kHz with ZVS assist.

Use Value: Low 370 ns trr and 5.8 µC Q_rr minimize dead-time losses and diode reverse recovery spikes.

Use Scenario: Bidirectional DC-DC stage in 6.6 kW OBC converting between 400 V battery and 400 V DC-link.

IC Role / Device Role / Timing Role: Synchronous rectifier switch in dual-active-bridge topology with 200 kHz switching.

Use Value: 1 Ω/W R_thj-case allows direct thermal coupling to liquid-cooled cold plate, sustaining 12 A continuous at T_c = 100 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW60R017C7	650 V, 0.017 Ω R_DS(on), 72 nC Q_g, TO-247 package	Higher conduction efficiency but larger footprint and higher switching loss due to 20% higher Q_g	Preferred where board space allows and conduction loss dominates over switching loss
IXFH32N60P	600 V, 0.18 Ω R_DS(on), 110 nC Q_g, TO-247 package	Lower cost but 83% higher gate charge increases driver complexity and EMI filtering burden	Selected when legacy TO-247 socket compatibility is required and thermal design accommodates higher R_thj-amb

Compared with IPW60R017C7 and IXFH32N60P, STL26NM60N delivers optimal balance of low R_DS(on), moderate Q_g, and compact surface-mount packaging - making it ideal for space-constrained, medium-power industrial and renewable energy systems where thermal management relies on PCB copper rather than external heatsinks.

Availability

STL26NM60N is available at Aetrix Electronics and suitable for server PSUs, industrial PFC modules, solar microinverters, and EV onboard charger DC-DC stages requiring stable component supply across multi-year production cycles.

Supply support for STL26NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, power, MCU, and sensor solutions for automotive, industrial, and consumer markets.

The MDmesh™ product line targets high-efficiency power conversion, with STL26NM60N specifically engineered for 600 V hard-switched and resonant topologies demanding low R_DS(on) × Q_g and rugged avalanche performance.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STL26NM60N supports 12 A continuous drain current at T_C = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limits of the PowerFLAT™ 8x8 HV package and ensures safe operation within the SOA boundary when mounted on a 1-inch² FR-4 board with 2 oz copper.

Does this MOSFET require a negative gate voltage for reliable turn-off?

No. The STL26NM60N has a gate threshold voltage range of 3–5 V and is fully enhanced at V_GS = 10 V. A gate drive of 0 V reliably holds the device off; applying –5 V is unnecessary and not recommended per ST's application guidance for MDmesh™ II devices.

Can the integrated body diode replace an external freewheeling diode in a buck converter?

Yes - the body diode is rated for 19 A continuous and 76 A pulsed current with 370 ns reverse recovery time at 25 °C. In buck converters operating below 100 kHz and with moderate load transients, it eliminates the need for an external diode, though synchronous rectification is preferred for highest efficiency above 50 kHz.

What is the minimum recommended PCB copper area for thermal performance?

ST specifies R_thj-amb = 45 °C/W when mounted on 1 inch² of FR-4 board with 2 oz copper. To achieve the rated 125 W power dissipation at T_C = 25 °C, at least this area must be allocated beneath the exposed drain pad, with thermal vias connecting to inner ground planes to maximize heat spreading.

STL26NM60N Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 2.7A (Ta), 19A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 185mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 60 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1800 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 125mW (Ta), 3W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerFlat™ (8x8) HV

STL26NM60N FAQ

1.How can I place an order for STL26NM60N through Aetrix?

Please submit a Request for Quotation (RFQ) for STL26NM60N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STL26NM60N reliable?

The price and inventory of STL26NM60N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STL26NM60N is usually 5 days.

3.What payment methods are accepted for STL26NM60N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STL26NM60N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STL26NM60N?

STL26NM60N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STL26NM60N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STL26NM60N?

For technical support, including STL26NM60N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STL26NM60N requirements.

6.How does Aetrix verify that STL26NM60N is sourced from the original manufacturer or authorized distributors?

All STL26NM60N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STL26NM60N meets industry standards.

7.What is the process for return or replacement of STL26NM60N?

All STL26NM60N units undergo pre-shipment inspection (PSI). If there is an issue with STL26NM60N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STL26NM60N part is unused and in its original packaging.

Return procedure for STL26NM60N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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