STMicroelectronics STL28N60DM2

Overview

STL28N60DM2 from STMicroelectronics is an N-channel 600 V, 21 A Power MOSFET in PowerFLAT™ 8x8 HV package, featuring 0.155 Ω typ. R_DS(on), 34 nC total gate charge, and fast-recovery body diode with 140 ns trr at 25 °C. It is engineered for high-efficiency bridge topologies and ZVS phase-shift converters in industrial SMPS.

For engineers reviewing the STL28N60DM2 datasheet, STL28N60DM2 pinout, STL28N60DM2 application, or STL28N60DM2 equivalent, key selection criteria include avalanche ruggedness (350 mJ EAS), dv/dt immunity (50 V/ns), Zener-protected gate, and low C_oss.eq (134 pF) for soft-switching performance.

Technical Context

This MDmesh™ DM2 device integrates a fast-recovery body diode with ultra-low Q_rr (0.5 µC typ.) and trr (140 ns), enabling reduced switching losses in hard- and resonant-mode converters. Its 600 V V_(BR)DSS and 50 V/ns dv/dt ruggedness support reliable operation under high-voltage transients.

The PowerFLAT™ 8x8 HV package delivers 0.89 °C/W R_thj-case, enabling high-current handling (21 A continuous) without external heatsinking in compact layouts. Built-in back-to-back Zener diodes provide ±30 V gate-source protection, eliminating need for external clamping.

Key Specifications

Pinout & Package

STL28N60DM2 uses the PowerFLAT™ 8x8 HV package - a surface-mount, exposed-drain, thermally enhanced leadless package with 8 mm × 8 mm footprint and 0.85 mm typical height. The drain is connected to the bottom thermal pad; source and gate are on the top side.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPP60R190C7 and STW20N60DM2, STL28N60DM2 uniquely combines Zener-protected gate, PowerFLAT™ thermal performance (0.89 °C/W), and industry-leading Q_rr/R_DS(on) ratio-making it optimal for space-constrained, high-frequency ZVS converters where gate protection and diode recovery are critical.

Availability

STL28N60DM2 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, telecom rectifiers, phase-shift full-bridge converters, and uninterruptible power supplies requiring stable component supply and long-term production continuity.

Supply support for STL28N60DM2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

The MDmesh™ DM2 product line targets high-efficiency, high-frequency power conversion, emphasizing fast-recovery diode integration, low gate charge, and avalanche ruggedness for next-generation SMPS and UPS systems.

FAQ

What is the maximum continuous drain current for STL28N60DM2 at 100 °C case temperature?

The maximum continuous drain current is 14 A at T_case = 100 °C, limited by package thermal constraints and junction temperature derating. This value assumes proper PCB copper area (≥1-inch², 2 oz Cu) and ambient airflow per ST's thermal data. At 25 °C case temperature, the rating rises to 21 A with 140 W total dissipation.

Does STL28N60DM2 require external gate protection?

No. STL28N60DM2 integrates back-to-back Zener diodes with ±30 V breakdown voltage, providing inherent gate-source overvoltage protection. This eliminates the need for external Zener clamps in standard 12–15 V gate-drive circuits, simplifying layout and reducing BOM count.

How does the PowerFLAT™ 8x8 HV package improve thermal performance over TO-220?

The PowerFLAT™ 8x8 HV package achieves 0.89 °C/W R_thj-case, significantly lower than TO-220's typical 1.5–2.0 °C/W. Its exposed drain pad allows direct thermal coupling to inner PCB layers, enabling higher power density and eliminating mechanical mounting hardware-critical for slim-profile server PSUs and telecom modules.

Can STL28N60DM2 replace older MDmesh™ D devices in existing designs?

Yes, with validation. STL28N60DM2 offers lower Q_rr (0.5 µC vs. ~1.2 µC in D-series), faster trr (140 ns vs. ~250 ns), and improved dv/dt ruggedness (50 V/ns). Layout changes may be needed due to PowerFLAT™ footprint differences, but gate drive and bias networks remain compatible given identical V_GS(th) and Q_g profiles.