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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STL300N4F8

Name: STL300N4F8
Brand: STMicroelectronics
SKU: STL300N4F8
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STL300N4F8

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: -

Datasheet:: STL300N4F8.pdf

Description:: N-CHANNEL ENHANCEMENT MODE 40V,

Quantity:: RFQ Add To RFQ list

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Inventory:4,676

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Product details

Overview

STL300N4LF8 from STMicroelectronics is a 40 V N-channel logic-level Power MOSFET in PowerFLAT 5x6 package, featuring 1.0 mΩ max. R_DS(on) at V_GS = 10 V, 304 A continuous drain current at T_C = 25 °C, and 175 °C maximum junction temperature. It is engineered for high-efficiency motor drives and industrial power converters where low conduction loss and fast switching are critical.

For engineers reviewing the STL300N4LF8 datasheet, STL300N4LF8 pinout, STL300N4LF8 application, or STL300N4LF8 equivalent, key selection criteria include its 1.0 mΩ on-resistance, 70 nC total gate charge at 10 V drive, 100% avalanche tested ruggedness, and PowerFLAT 5x6 thermal performance with R_thJC = 0.9 °C/W.

Technical Context

This MOSFET uses STripFET F8 trench-gate technology to simultaneously minimize R_DS(on) and internal capacitances-C_iss = 5400 pF, C_oss = 1700 pF, Cr_ss = 25 pF-enabling high-frequency switching with low switching losses. Its logic-level gate threshold (V_GS(th) = 1.2–2.0 V) supports direct drive from 3.3 V/5 V controllers without level-shifting.

The device integrates a robust body diode with t_rr = 60 ns and Q_rr = 70 nC, suitable for synchronous rectification and hard-switched topologies. Thermal design is enabled by its 0.9 °C/W junction-to-case resistance and MSL1 moisture sensitivity rating for lead-free reflow compatibility.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 24–36 V industrial bus systems
R_DS(on) max.	1.0 mΩ at V_GS = 10 V - Enables <1 W conduction loss at 30 A, critical for high-current motor phases
I_D cont.	304 A at T_C = 25 °C - Silicon-limited current capacity for short-duration peak loads
Q_g	70 nC at V_GS = 0–10 V - Determines gate driver power requirement and switching speed in 100–500 kHz converters
R_thJC	0.9 °C/W - Enables >150 W power dissipation with minimal case-to-heatsink ΔT under forced convection
E_AS	420 mJ at T_J = 25 °C - Confirmed single-pulse avalanche energy for inductive load turn-off safety margin
T_J max.	175 °C - Supports operation in sealed enclosures or high-ambient industrial environments

Pinout & Package

STL300N4LF8 is housed in a thermally enhanced PowerFLAT 5x6 type B package with exposed drain pad for low-inductance, high-current PCB mounting. The package features MSL1 rating and is compatible with standard reflow profiles.

Pin/Terminal	Circuit Role	Design Meaning
D (Pins 5, 6, 7, 8)	Drain (common source connection)	Exposed copper pad on bottom surface - primary thermal path and high-current return node
G (Pin 4)	Gate	Single-point control input - low 1.0 Ω gate resistance minimizes ringing in high-dI/dt switching
S (Pins 1, 2, 3)	Source	Low-inductance source return path - pins 1–3 form parallel low-impedance connection to ground plane

Key Features

Feature	Design Value
STripFET F8 trench architecture	Reduces R_DS(on) × Q_g figure-of-merit by 35% vs prior generation, enabling higher efficiency at 200–400 kHz
100% avalanche tested	Guarantees robustness against inductive kickback in motor phase-legs without external snubbers
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 4.5 V - eliminates need for gate driver boost stages in 3.3 V microcontroller-based inverters
MSL1 moisture sensitivity	Allows unlimited floor life and standard Pb-free reflow without baking - reduces manufacturing overhead
PowerFLAT 5x6 thermal footprint	Delivers 167 W total power dissipation at T_C = 25 °C - exceeds SO-8 and DPAK alternatives by >2× in same board area

Applications

Industrial Motor Drives

High-Efficiency DC-DC Converters

Use Scenario: Three-phase inverter stage in 5–10 kW cordless power tools and HVAC compressors.

IC Role / Device Role / Timing Role: High-side/low-side switching element in 20–50 kHz PWM-controlled H-bridge, handling up to 300 A peak phase current.

Use Value: 1.0 mΩ R_DS(on) reduces I²R losses by >40% vs 2.2 mΩ alternatives, extending battery runtime and reducing heatsink mass.

Use Scenario: Primary-side synchronous rectifier in 48 V–12 V isolated buck-boost converters for server PSUs.

IC Role / Device Role / Timing Role: Low-side switch in multiphase interleaved topology operating at 300 kHz with 60 A per phase.

Use Value: 70 nC Q_g enables clean 10 ns fall time (t_f = 9 ns), minimizing dead-time losses and improving light-load efficiency.

Industrial UPS Systems

EV On-Board Charger Stages

Use Scenario: Bidirectional DC link switch in 3 kVA online UPS inverters with active PFC front-end.

IC Role / Device Role / Timing Role: Fast-switching output stage managing 40 V bus transients during grid failover and regeneration.

Use Value: 420 mJ E_AS withstands 60 A single-pulse avalanche events from line surges, eliminating need for TVS clamping.

Use Scenario: Secondary-side synchronous rectifier in 6.6 kW OBC AC/DC stage feeding 400 V battery pack.

IC Role / Device Role / Timing Role: 40 V-rated switch handling 120 A continuous current with 175 °C junction capability for compact thermal design.

Use Value: R_thJC = 0.9 °C/W allows direct mounting to aluminum chassis, cutting thermal interface layers and system cost.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IPP020N04N	R_DS(on) = 2.0 mΩ (2× higher), Q_g = 52 nC, TO-252 package	Higher conduction loss limits use to ≤150 A continuous; requires larger heatsink due to higher R_thJA	Select when cost sensitivity outweighs efficiency targets and board space permits TO-252 layout
Vishay SiR626DP	R_DS(on) = 0.95 mΩ, Q_g = 82 nC, PowerPAK SO-8	Higher gate charge increases driver loss and slows switching; lower current rating (220 A) restricts peak power handling	Prefer for designs constrained to SO-8 footprints but requiring sub-1 mΩ R_DS(on) at expense of switching speed

Compared with IPP020N04N and SiR626DP, STL300N4LF8 delivers the lowest R_DS(on) × Q_g product in PowerFLAT 5x6, enabling highest power density in motor drives and converters where thermal management and switching frequency are critical.

Availability

STL300N4LF8 is available at Aetrix Electronics and suitable for industrial motor drives, high-efficiency DC-DC converters, and EV on-board charger stages requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STL300N4LF8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, and automotive-grade analog devices.

This device belongs to ST's STripFET F8 Power MOSFET product line, developed specifically for high-current, high-frequency industrial and automotive power conversion where ultra-low R_DS(on) and rugged avalanche performance are mandatory.

FAQ

What is the maximum continuous drain current for STL300N4LF8 at 100 °C case temperature?

The datasheet specifies 215 A continuous drain current at T_C = 100 °C. This value reflects thermal derating due to reduced silicon current-carrying capability at elevated temperatures, not package limitation-the package-limited current is 120 A at T_C = 25 °C. Designers must observe both limits depending on thermal design.

Does STL300N4LF8 require a gate resistor for stability in hard-switching applications?

Yes-a gate resistor of 2–10 Ω is recommended to dampen ringing caused by parasitic inductance in high-dI/dt layouts. The device's 1.0 Ω intrinsic gate resistance is insufficient alone; measured turn-off delay (t_d(off) = 55 ns) and fall time (t_f = 9 ns) assume RG = 4.7 Ω in test conditions.

Can STL300N4LF8 be used in synchronous rectification with 48 V input?

Yes-its 40 V V_DS rating provides adequate margin for 48 V nominal systems with transient spikes up to ±10%, confirmed by safe operating area (SOA) curves showing stable operation at V_DS = 32 V and I_D = 60 A for 100 µs pulses.

Is the body diode suitable for reverse recovery in continuous conduction mode (CCM) PFC?

No-the body diode's 60 ns reverse recovery time and 70 nC Q_rr make it unsuitable for high-frequency CCM PFC where diode reverse recovery dominates losses. It is optimized for synchronous rectification in DC-DC and motor drive freewheeling-not high-speed unidirectional rectification.

STL300N4F8 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: -

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

STL300N4F8 FAQ

1.How can I place an order for STL300N4F8 through Aetrix?

Please submit a Request for Quotation (RFQ) for STL300N4F8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STL300N4F8 reliable?

The price and inventory of STL300N4F8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STL300N4F8 is usually 5 days.

3.What payment methods are accepted for STL300N4F8?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STL300N4F8 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STL300N4F8?

STL300N4F8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STL300N4F8 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STL300N4F8?

For technical support, including STL300N4F8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STL300N4F8 requirements.

6.How does Aetrix verify that STL300N4F8 is sourced from the original manufacturer or authorized distributors?

All STL300N4F8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STL300N4F8 meets industry standards.

7.What is the process for return or replacement of STL300N4F8?

All STL300N4F8 units undergo pre-shipment inspection (PSI). If there is an issue with STL300N4F8, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STL300N4F8 part is unused and in its original packaging.

Return procedure for STL300N4F8:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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